FDS8690 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The FDS8690 is an N-Channel 30V 14A surface mount MOSFET manufactured by onsemi in the PowerTrench® series. This device is rated for 2.5W power dissipation and operates across a temperature range of -55°C to 150°C. The part is currently listed as obsolete, making identification of equivalent and substitute components necessary for ongoing design support, production continuity, and system maintenance.

Substitute parts are selected based on matching or exceeding critical electrical parameters including drain-source voltage (Vdss), continuous drain current (Id), on-resistance (Rds On), and thermal characteristics, while maintaining compatible surface mount packaging.

Key Parameters

Parameter	FDS8690 Specification
Drain to Source Voltage (Vdss)	30 V
Continuous Drain Current (Id) @ 25°C	14 A (Ta)
Rds On (Max) @ Id, Vgs	7.6 mOhm @ 14A, 10V
Gate Threshold Voltage Vgs(th) (Max) @ Id	3 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1680 pF @ 15 V
Power Dissipation (Max)	2.5 W (Ta)
Operating Temperature Range	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the FDS8690 are grouped based on electrical parameter compatibility and package form factor. The substitution logic is determined by the following critical parameters:

Electrical Matching Criteria:

Drain to Source Voltage (Vdss): Substitute parts must equal or exceed 30V
Continuous Drain Current (Id): Substitute parts must equal or exceed 14A at 25°C
On-Resistance (Rds On): Substitute parts should maintain comparable or lower on-resistance to ensure thermal performance
Gate Charge (Qg): Lower gate charge values indicate improved switching efficiency
Operating Temperature Range: Substitute parts must support -55°C to 150°C operation

Package Compatibility:

All substitute parts are surface mount N-Channel MOSFETs in 8-pin configurations (8-SOIC, 8-SOP, 8-SO, or 8-VSONP)
Pin-to-pin compatibility is maintained across the 8-pin SOIC family

Compliance Requirements:

All substitute parts maintain ROHS3 compliance
All substitute parts carry MSL 1 (Unlimited) moisture sensitivity rating
All substitute parts are classified under ECCN EAR99 and HTSUS 8541.29.0095

The following substitute parts meet these criteria and are organized by manufacturer and electrical performance characteristics.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Ciss (pF)	Power Diss. (W)	Package	Status
FDS8690	onsemi	30	14 (Ta)	7.6 @ 14A, 10V	27 @ 10V	1680 @ 15V	2.5 (Ta)	8-SOIC	Obsolete
SI4430BDY-T1-GE3	Vishay Siliconix	30	14 (Ta)	4.5 @ 20A, 10V	36 @ 4.5V	Not specified	1.6 (Ta)	8-SOIC	Active
DMN3007LSS-13	Diodes Incorporated	30	16 (Ta)	7 @ 15A, 10V	64.2 @ 10V	2714 @ 15V	2.5	8-SOP	Active
IRF8714TRPBF	Infineon Technologies	30	14 (Ta)	8.7 @ 14A, 10V	12 @ 4.5V	1020 @ 15V	2.5 (Ta)	8-SO	Active
CSD16409Q3	Texas Instruments	25	15 (Ta), 60 (Tc)	8.2 @ 17A, 10V	5.6 @ 4.5V	800 @ 12.5V	2.6 (Ta)	8-VSONP (5x6)	Active
DMN3010LSS-13	Diodes Incorporated	30	16 (Ta)	9 @ 16A, 10V	43.7 @ 10V	2096 @ 15V	2.5 (Ta)	8-SOP	Active
IRF8721TRPBF	Infineon Technologies	30	14 (Ta)	8.5 @ 14A, 10V	12 @ 4.5V	1040 @ 15V	2.5 (Ta)	8-SO	Active
RSS140N03TB	Rohm Semiconductor	30	14 (Ta)	6.7 @ 14A, 10V	37 @ 5V	3150 @ 10V	2 (Ta)	8-SOP	Active
SI4430BDY-T1-E3	Vishay Siliconix	30	14 (Ta)	4.5 @ 20A, 10V	36 @ 4.5V	Not specified	1.6 (Ta)	8-SOIC	Active

Engineering Selection Recommendations

Primary Substitutes (Highest Compatibility):

The SI4430BDY-T1-GE3 and SI4430BDY-T1-E3 (Vishay Siliconix TrenchFET® series) provide the closest electrical match to the FDS8690. Both parts maintain 30V Vdss, 14A continuous drain current, and 8-SOIC package compatibility. These devices feature lower on-resistance (4.5 mOhm) and reduced power dissipation (1.6W), offering improved thermal performance. Both variants are in active production status with full ROHS3 compliance and MSL 1 rating.

Secondary Substitutes (Equivalent Performance):

The IRF8714TRPBF and IRF8721TRPBF (Infineon HEXFET® series) match the FDS8690 across all critical parameters: 30V Vdss, 14A Id, 2.5W power dissipation, and -55°C to 150°C operating range. Both are available in 8-SO package with active product status. The IRF8721TRPBF offers marginally lower on-resistance (8.5 mOhm vs. 8.7 mOhm) and is available in higher inventory quantities (35,100 units).

Alternative Substitutes (Higher Current Capability):

The DMN3007LSS-13 and DMN3010LSS-13 (Diodes Incorporated) provide 16A continuous drain current, exceeding the FDS8690 specification. Both maintain 30V Vdss and 2.5W power dissipation. The DMN3007LSS-13 features lower on-resistance (7 mOhm) compared to the DMN3010LSS-13 (9 mOhm). These parts are supplied in 8-SOP package with active status and full compliance certifications.

Voltage-Reduced Alternative:

The CSD16409Q3 (Texas Instruments NexFET™) operates at 25V Vdss (5V lower than FDS8690) but provides 15A continuous drain current and 60A pulsed drain current. This part is suitable for applications where the lower voltage rating is acceptable. The 8-VSONP (5x6) package differs from the standard 8-SOIC form factor and requires PCB layout verification.

Lower Power Dissipation Option:

The RSS140N03TB (Rohm Semiconductor) matches the FDS8690 across voltage and current specifications but features reduced power dissipation (2W vs. 2.5W) and improved on-resistance (6.7 mOhm). This part is available in 8-SOP package with active status.

All recommended substitutes maintain ROHS3 compliance, MSL 1 moisture sensitivity rating, and EAR99 export classification consistent with the FDS8690.

Frequently Asked Questions (FAQ)

Q: Can the SI4430BDY-T1-GE3 directly replace the FDS8690 in existing designs?

A: The SI4430BDY-T1-GE3 maintains electrical compatibility across all critical parameters (30V Vdss, 14A Id, 8-SOIC package) and is pin-compatible with the FDS8690. The lower on-resistance (4.5 mOhm vs. 7.6 mOhm) and reduced power dissipation (1.6W vs. 2.5W) represent performance improvements. No circuit modifications are required for direct substitution.

Q: What is the difference between the DMN3007LSS-13 and DMN3010LSS-13?

A: Both parts are Diodes Incorporated N-Channel MOSFETs with 30V Vdss and 16A continuous drain current. The primary difference is on-resistance: DMN3007LSS-13 specifies 7 mOhm @ 15A, 10V, while DMN3010LSS-13 specifies 9 mOhm @ 16A, 10V. The DMN3007LSS-13 offers superior thermal performance due to lower on-resistance. Both are supplied in 8-SOP package with active product status.

Q: Why does the CSD16409Q3 have a lower Vdss rating (25V vs. 30V)?

A: The CSD16409Q3 is rated for 25V maximum drain-source voltage, which is 5V lower than the FDS8690. This part is suitable only for applications where the circuit voltage does not exceed 25V. The lower voltage rating allows for improved on-resistance characteristics and higher pulsed current capability (60A Tc). Substitution requires verification that the application voltage specification does not exceed 25V.

Q: Are all substitute parts available in the same package as the FDS8690?

A: The FDS8690 is supplied in 8-SOIC package. Most substitute parts are available in compatible 8-pin surface mount packages: 8-SOIC, 8-SOP, or 8-SO. These packages maintain pin-to-pin compatibility for standard SOIC footprints. The CSD16409Q3 uses 8-VSONP (5x6) package, which requires different PCB layout and is not pin-compatible with standard 8-SOIC footprints.

Q: What is the significance of the gate charge (Qg) parameter in selecting a substitute?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge values (such as the 5.6 nC specification of CSD16409Q3 or 12 nC of IRF8714TRPBF) indicate faster switching transitions and reduced driver power consumption. The FDS8690 specifies 27 nC @ 10V. Substitutes with lower gate charge provide improved switching efficiency but do not affect DC circuit operation.

Q: Are all substitute parts ROHS3 compliant?

A: All substitute parts listed in this reference maintain ROHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating, consistent with the FDS8690. All parts are classified under ECCN EAR99 and HTSUS 8541.29.0095 for export purposes.

Q: What is the difference between Ta (ambient temperature) and Tc (case temperature) current ratings?

A: The CSD16409Q3 specifies 15A @ Ta (ambient temperature) and 60A @ Tc (case temperature). The Ta rating represents continuous current under standard ambient conditions, while Tc represents current capability when the case temperature is controlled. The FDS8690 and most other substitutes specify only Ta ratings. For thermal design purposes, use the Ta rating unless case temperature control is implemented.

Q: Can the RSS140N03TB be used in high-temperature applications?

A: The RSS140N03TB specifies a maximum operating temperature of 150°C (TJ), matching the FDS8690 upper temperature limit. However, the RSS140N03TB does not specify a minimum operating temperature, while the FDS8690 specifies -55°C minimum. Verification of the RSS140N03TB low-temperature performance is required for applications requiring operation below 0°C.

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