FDS86140 Equivalent & Substitute Parts

Part Overview

The FDS86140 is an N-Channel MOSFET manufactured by onsemi, rated for 100V drain-to-source voltage with 11.2A continuous drain current at 25°C. This device operates in the PowerTrench® series and is housed in an 8-SOIC surface mount package. The part is currently in active production status with RoHS3 compliance and unlimited moisture sensitivity level (MSL 1).

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges, allowing for component interchangeability in circuit designs where the main part may be unavailable or when alternative sourcing is required.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	11.2	A
On-Resistance (Rds On) @ 11.2A, 10V	9.8	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	41	nC
Power Dissipation (Max)	2.5 (Ta), 5 (Tc)	W
Operating Temperature Range	-55 to 150	°C
Package Type	8-SOIC
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitute parts for the FDS86140 are classified based on the following electrical and mechanical criteria:

Direct Substitutes maintain the same drain-to-source voltage rating (100V) and comparable continuous drain current performance, with compatible 8-SOIC package footprints and surface mount technology. These parts satisfy applications requiring equivalent voltage handling and current capacity.

Functional Alternatives operate at reduced voltage ratings (80V) or current ratings but maintain compatibility with the 8-SOIC package family and surface mount mounting type. These parts are suitable for applications where the full 100V rating is not required.

Performance-Enhanced Alternatives provide higher current capacity and power dissipation ratings while maintaining the 100V voltage class, available in alternative surface mount packages (8-HSOP). These parts accommodate designs requiring increased thermal performance or current handling.

The substitution logic is based on:

Drain-to-Source Voltage (Vdss) compatibility
Continuous Drain Current (Id) capability
On-Resistance (Rds On) characteristics
Package type and mounting compatibility
Operating temperature range alignment
RoHS3 compliance and MSL rating

Parameter Comparison

Parameter	FDS86140	IRF7854TRPBF	IRF7493TRPBF	IRF7853TRPBF	RS6P100BHTB1
Manufacturer	onsemi	Infineon Technologies	Infineon Technologies	Infineon Technologies	Rohm Semiconductor
Vdss (V)	100	80	80	100	100
Id @ 25°C (A)	11.2	10	9.3	8.3	100
Rds On @ Rated Id, 10V (mOhm)	9.8	13.4	15	18	5.9
Vgs(th) (V)	4	4.9	4	4.9	4
Qg @ 10V (nC)	41	41	53	39	45
Power Dissipation (W)	2.5 (Ta), 5 (Tc)	2.5 (Ta)	2.5 (Tc)	2.5 (Ta)	104 (Tc)
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	to 150
Package Type	8-SOIC	8-SO	8-SO	8-SO	8-HSOP
Series	PowerTrench®	HEXFET®	HEXFET®	HEXFET®	-
RoHS3 Compliant	Yes	Yes	Yes	Yes	Not specified
MSL Rating	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

IRF7854TRPBF (Infineon Technologies) is suitable for applications where 80V voltage rating is acceptable and current requirements do not exceed 10A. This part maintains the 8-SO package footprint compatible with 8-SOIC layouts and provides comparable gate charge characteristics (41 nC). RoHS3 compliance and MSL 1 rating align with the main part specifications.

IRF7493TRPBF (Infineon Technologies) operates at 80V with 9.3A continuous drain current. This substitute is applicable in designs where voltage derating is permissible. Higher on-resistance (15 mOhm) and gate charge (53 nC) require thermal and switching speed evaluation. RoHS3 compliance and MSL 1 rating are maintained.

IRF7853TRPBF (Infineon Technologies) maintains the 100V voltage rating with 8.3A continuous drain current. This part is directly compatible with 100V circuit designs but with reduced current capacity. On-resistance of 18 mOhm and gate charge of 39 nC differ from the main part. RoHS3 compliance and MSL 1 rating are equivalent.

RS6P100BHTB1 (Rohm Semiconductor) provides 100V rating with significantly higher current capacity (100A) and power dissipation (104W). This part is applicable for high-current applications requiring enhanced thermal performance. The 8-HSOP package differs from the 8-SOIC footprint and requires PCB layout modification. MSL 1 rating is maintained; RoHS3 compliance status is not specified in provided data.

All substitute parts maintain active product status and operate across the -55°C to 150°C temperature range. Selection depends on specific circuit voltage requirements, current demands, thermal constraints, and PCB layout compatibility.

Frequently Asked Questions (FAQ)

Q: Can IRF7854TRPBF be used as a direct replacement for FDS86140?

A: IRF7854TRPBF is functionally compatible for applications where the 80V voltage rating is acceptable. The part maintains comparable gate charge (41 nC) and similar on-resistance characteristics. However, circuits designed for 100V operation require voltage derating analysis. The 8-SO package is footprint-compatible with 8-SOIC layouts.

Q: What is the primary difference between IRF7493TRPBF and IRF7853TRPBF?

A: IRF7493TRPBF operates at 80V with 9.3A current rating, while IRF7853TRPBF maintains 100V voltage rating with 8.3A current capacity. IRF7493TRPBF exhibits higher on-resistance (15 mOhm) and gate charge (53 nC) compared to IRF7853TRPBF (18 mOhm, 39 nC). Voltage rating selection determines which part is appropriate for the application.

Q: Is RS6P100BHTB1 a pin-compatible substitute?

A: RS6P100BHTB1 uses an 8-HSOP package, which differs from the FDS86140 8-SOIC package. While both are surface mount 8-pin configurations, the physical footprint and pin spacing are not identical. PCB layout modification is required for this substitution. The part is suitable for applications requiring higher current capacity (100A) and thermal performance (104W).

Q: What parameters determine substitution compatibility?

A: Primary parameters are drain-to-source voltage (Vdss), continuous drain current (Id), on-resistance (Rds On), and package type. Secondary considerations include gate charge (Qg), gate threshold voltage (Vgs(th)), and power dissipation rating. All substitute parts maintain RoHS3 compliance and MSL 1 rating equivalent to the main part.

Q: Can FDS86140 be replaced in a 100V application with an 80V-rated part?

A: 80V-rated parts (IRF7854TRPBF, IRF7493TRPBF) are not suitable for circuits designed to operate at 100V without circuit redesign and voltage derating analysis. Use 100V-rated substitutes (IRF7853TRPBF, RS6P100BHTB1) for direct voltage class compatibility.

Q: What is the impact of higher on-resistance in substitute parts?

A: Higher on-resistance increases power dissipation during conduction. IRF7493TRPBF (15 mOhm) and IRF7853TRPBF (18 mOhm) exhibit increased on-resistance compared to FDS86140 (9.8 mOhm). Thermal analysis is required to confirm acceptable junction temperature operation within the -55°C to 150°C range.

Q: Are all substitute parts RoHS3 compliant?

A: IRF7854TRPBF, IRF7493TRPBF, and IRF7853TRPBF are confirmed RoHS3 compliant. RS6P100BHTB1 RoHS3 compliance status is not specified in the provided data. Verify compliance requirements with the manufacturer before selection for regulated applications.

Q: What is the significance of gate charge (Qg) differences?

A: Gate charge affects switching speed and driver circuit requirements. FDS86140 and IRF7854TRPBF both specify 41 nC gate charge, indicating similar switching characteristics. IRF7493TRPBF (53 nC) requires higher gate charge, potentially affecting switching frequency performance. IRF7853TRPBF (39 nC) provides slightly faster switching response.

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