FDS6982S Equivalent & Substitute Parts

Part Overview

The FDS6982S is a dual N-channel MOSFET array manufactured by onsemi, designed for surface mount applications in 8-SOIC packaging. This device features a 30V drain-to-source voltage rating with continuous drain current capabilities of 6.3A and 8.6A, and integrates logic level gate functionality for direct digital control. The FDS6982S is classified as obsolete, necessitating identification of active equivalent components for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating packaging and performance variations.

Substiute Parts

FDS6982S

onsemiIn Stock: 19113FDS6982S Datasheet

Current PartRFQ

SP8K3TB

Rohm SemiconductorIn Stock: 17292SP8K3TB Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the FDS6982S is determined by strict alignment of electrical and mechanical parameters. The primary substitution criteria are:

Voltage Rating: The substitute part must maintain a Vdss rating of 30V or greater to ensure equivalent or superior voltage withstand capability.

Current Rating: The substitute part must support continuous drain current (Id) at 25°C equal to or exceeding 6.3A to 8.6A, ensuring the device can handle the same load conditions.

On-Resistance (Rds On): The substitute part must not exceed the maximum on-resistance of 28mOhm at the specified gate-source voltage and drain current to maintain equivalent power dissipation and thermal performance.

Gate Threshold Voltage (Vgs(th)): The substitute part must maintain logic level gate operation with a threshold voltage compatible with standard digital control signals.

Package Compatibility: The substitute part must be available in 8-SOIC or equivalent surface mount packaging with identical or compatible pinout and footprint dimensions.

Configuration: The substitute part must maintain dual N-channel configuration to preserve circuit functionality.

The SP8K3TB from Rohm Semiconductor meets these substitution criteria with equivalent voltage rating, superior current capability (7A), improved on-resistance (24mOhm), and compatible packaging.

Parameter Comparison

Engineering Selection Recommendations

The SP8K3TB from Rohm Semiconductor is a direct substitute for the obsolete FDS6982S. The SP8K3TB maintains electrical equivalence across all critical parameters: identical 30V Vdss rating, superior continuous drain current (7A versus 6.3A/8.6A), improved on-resistance (24mOhm versus 28mOhm), and compatible logic level gate operation. Both devices share identical 8-SOIC packaging with 0.154" width and MSL 1 moisture sensitivity rating.

The SP8K3TB offers performance advantages including higher maximum power dissipation (2W versus 900mW), lower input capacitance (600pF versus 2040pF), and active product status ensuring long-term availability and supply chain continuity. The device is ROHS3 compliant, meeting current environmental and regulatory requirements.

Selection of the SP8K3TB eliminates obsolescence risk while providing equivalent or superior electrical performance. The improved on-resistance and reduced input capacitance result in lower switching losses and improved thermal efficiency in switching applications.

Frequently Asked Questions (FAQ)

Q: Can the SP8K3TB directly replace the FDS6982S in existing designs?

A: Yes. The SP8K3TB maintains identical 30V voltage rating, equivalent or superior current handling (7A), improved on-resistance (24mOhm), and compatible 8-SOIC packaging. The devices are pin-compatible and functionally equivalent for logic level gate-driven applications.

Q: What are the key electrical differences between these devices?

A: The SP8K3TB provides superior performance: lower on-resistance (24mOhm versus 28mOhm), lower input capacitance (600pF versus 2040pF), and higher power dissipation capability (2W versus 900mW). Gate threshold voltage is slightly lower (2.5V versus 3V), maintaining logic level operation. Gate charge is nearly identical (11.8nC versus 12nC).

Q: Are the packages physically identical?

A: Both devices use 8-SOIC packaging with 0.154" (3.90mm) width. The packages are mechanically compatible and share identical footprints for PCB layout purposes.

Q: What is the product status difference, and why does it matter?

A: The FDS6982S is classified as obsolete, indicating onsemi has discontinued production and support. The SP8K3TB is active, ensuring ongoing availability, technical support, and supply chain reliability for current and future production.

Q: Are there compliance or regulatory differences?

A: The SP8K3TB is ROHS3 compliant, meeting current environmental regulations. Both devices are REACH unaffected and carry EAR99 ECCN classification. Both maintain MSL 1 (unlimited) moisture sensitivity rating.

Q: How do the thermal characteristics compare?

A: The SP8K3TB supports higher maximum power dissipation (2W versus 900mW), providing greater thermal headroom. The improved on-resistance (24mOhm versus 28mOhm) results in lower I²R losses at equivalent current levels, reducing junction temperature rise in switching applications.

Q: What is the operating temperature range for each device?

A: The FDS6982S operates from -55°C to 150°C (TJ). The SP8K3TB specification indicates 150°C (TJ) maximum. Both devices support standard industrial temperature ranges for surface mount applications.

Q: Are gate drive requirements identical?

A: Both devices feature logic level gate operation with compatible threshold voltages (3V and 2.5V respectively). Standard digital control signals (3.3V to 5V) drive both devices effectively. The slightly lower threshold voltage of the SP8K3TB provides improved gate drive margin.