FDS6982AS MOSFET Equivalent & Substitute Parts

Part Overview

The FDS6982AS is a dual N-channel MOSFET manufactured by onsemi, configured as a 2N-channel logic level gate device rated for 30V drain-to-source voltage with continuous drain current ratings of 6.3A and 8.6A. The device is housed in an 8-SOIC surface mount package and features PowerTrench® and SyncFET™ technology. This part is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design requirements and production continuity.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	6.3A, 8.6A	A
Rds On (Max) @ Id, Vgs	28mOhm @ 6.3A, 10V	mOhm
Vgs(th) (Max) @ Id	3V @ 250µA	V
Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V	nC
Input Capacitance (Ciss) (Max) @ Vds	610pF @ 10V	pF
Power - Max	900	mW
Operating Temperature Range	-55 to 150	°C (TJ)
Package / Case	8-SOIC (0.154", 3.90mm Width)	—
Configuration	2 N-Channel (Dual)	—
FET Feature	Logic Level Gate	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the FDS6982AS is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): Must equal 30V
Configuration: Must be 2 N-Channel (Dual)
FET Feature: Must be Logic Level Gate
Package / Case: Must be 8-SOIC (0.154", 3.90mm Width)
Operating Temperature Range: Must span -55°C to 150°C (TJ)
Mounting Type: Must be Surface Mount

Secondary Compatibility Parameters:

Continuous Drain Current (Id) @ 25°C: Substitute must meet or exceed 6.3A minimum
Rds On (Max) @ Id, Vgs: Lower or equal values indicate improved performance
Gate Charge (Qg) (Max) @ Vgs: Lower values indicate faster switching characteristics
Input Capacitance (Ciss) (Max) @ Vds: Lower values indicate reduced gate drive requirements
Power - Max: Higher values indicate greater thermal capability
RoHS Status: Must maintain ROHS3 Compliance
Moisture Sensitivity Level (MSL): Must be MSL 1 or MSL 3 (168 Hours)

The following parts meet all primary substitution criteria and are therefore qualified as direct substitutes:

NTMD4820NR2G (onsemi) — Active status, reduced current rating
DMN3033LSD-13 (Diodes Incorporated) — Active status, enhanced current and power ratings
SI4202DY-T1-GE3 (Vishay Siliconix) — Active status, superior current and power ratings
TSM4936DCS RLG (Taiwan Semiconductor Corporation) — Not For New Designs status, comparable current rating

Parameter Comparison

Parameter	FDS6982AS	NTMD4820NR2G	DMN3033LSD-13	SI4202DY-T1-GE3	TSM4936DCS RLG
Manufacturer	onsemi	onsemi	Diodes Incorporated	Vishay Siliconix	Taiwan Semiconductor Corporation
Vdss (V)	30	30	30	30	30
Id @ 25°C (A)	6.3, 8.6	4.9	6.9	12.1	5.9
Rds On (Max) (mOhm)	28 @ 6.3A, 10V	20 @ 7.5A, 10V	20 @ 6.9A, 10V	14 @ 8A, 10V	36 @ 5.9A, 10V
Vgs(th) (Max) (V)	3 @ 250µA	3 @ 250µA	2.1 @ 250µA	2.5 @ 250µA	3 @ 250µA
Qg (Max) (nC)	15 @ 10V	7.7 @ 4.5V	13 @ 10V	17 @ 10V	13 @ 10V
Ciss (Max) (pF)	610 @ 10V	940 @ 15V	725 @ 15V	710 @ 15V	610 @ 15V
Power - Max (W)	0.9	0.75	2	3.7	3
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package / Case	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC
Configuration	2 N-Channel	2 N-Channel	2 N-Channel	2 N-Channel	2 N-Channel
FET Feature	Logic Level Gate	Logic Level Gate	Logic Level Gate	Logic Level Gate	—
Product Status	Obsolete	Active	Active	Active	Not For New Designs
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	3 (168 Hours)

Engineering Selection Recommendations

For New Designs and Production Continuity:

Primary Recommendation: SI4202DY-T1-GE3 (Vishay Siliconix)

The SI4202DY-T1-GE3 is the preferred substitute for the obsolete FDS6982AS. This device is in Active product status, ensuring long-term availability and supply chain stability. It meets all primary substitution criteria with identical 30V Vdss rating, 2 N-Channel dual configuration, logic level gate feature, and 8-SOIC package. The SI4202DY-T1-GE3 provides superior electrical performance with 12.1A continuous drain current (compared to 6.3A/8.6A of the FDS6982AS), lower on-resistance of 14mOhm, and significantly higher power dissipation capability of 3.7W. The device maintains full RoHS3 compliance and MSL 1 rating. REACH status is Affected, which requires verification against specific application requirements.

Secondary Recommendation: DMN3033LSD-13 (Diodes Incorporated)

The DMN3033LSD-13 is an Active status alternative offering 6.9A continuous drain current, closely matching the FDS6982AS performance envelope. This device provides 20mOhm on-resistance and 2W power dissipation, representing a balanced upgrade path. It maintains ROHS3 compliance and MSL 1 rating. The lower gate threshold voltage of 2.1V provides improved logic level gate performance. This substitute is suitable for applications where the SI4202DY-T1-GE3 performance exceeds system requirements.

Tertiary Recommendation: NTMD4820NR2G (onsemi)

The NTMD4820NR2G is an Active status onsemi device maintaining manufacturer continuity. However, the 4.9A continuous drain current rating falls below the FDS6982AS minimum specification of 6.3A. This substitute is applicable only in applications where the actual circuit current demand does not exceed 4.9A. The device offers improved on-resistance of 20mOhm and reduced gate charge of 7.7nC, providing faster switching characteristics. RoHS3 compliance and MSL 1 rating are maintained.

Not Recommended for New Designs: TSM4936DCS RLG (Taiwan Semiconductor Corporation)

The TSM4936DCS RLG carries a "Not For New Designs" product status designation, indicating manufacturer discontinuation trajectory. While the device meets primary substitution criteria with 5.9A continuous drain current and comparable electrical characteristics, its MSL 3 (168 Hours) moisture sensitivity level represents reduced handling flexibility compared to the FDS6982AS MSL 1 rating. This substitute is restricted to legacy production support only.

Frequently Asked Questions (FAQ)

Q: Can the NTMD4820NR2G directly replace the FDS6982AS in all applications?

A: The NTMD4820NR2G meets all primary substitution criteria (30V Vdss, 2 N-Channel, logic level gate, 8-SOIC package, -55°C to 150°C operating range). However, the 4.9A continuous drain current rating is below the FDS6982AS specification of 6.3A/8.6A. Direct substitution is valid only when circuit analysis confirms that actual drain current does not exceed 4.9A under all operating conditions.

Q: What is the primary advantage of SI4202DY-T1-GE3 over the original FDS6982AS?

A: The SI4202DY-T1-GE3 provides superior current handling (12.1A versus 6.3A/8.6A), lower on-resistance (14mOhm versus 28mOhm), and significantly higher power dissipation capability (3.7W versus 900mW). The device is in Active product status, ensuring long-term availability. These characteristics make it suitable for applications requiring higher performance margins or thermal headroom.

Q: Are all substitute parts pin-compatible with the FDS6982AS?

A: All substitute parts listed share the identical 8-SOIC (0.154", 3.90mm Width) package designation. Pin compatibility is confirmed for all four substitute devices. Physical board layout modifications are not required for package accommodation.

Q: What does "Not For New Designs" status mean for the TSM4936DCS RLG?

A: "Not For New Designs" indicates that the manufacturer (Taiwan Semiconductor Corporation) has discontinued active development and marketing of this device. While existing inventory may be available, the part is not recommended for incorporation into new product designs due to uncertain long-term availability and potential future discontinuation. This designation restricts use to legacy production support and maintenance applications only.

Q: How does the MSL rating difference between FDS6982AS (MSL 1) and TSM4936DCS RLG (MSL 3) affect handling?

A: MSL 1 (Unlimited) indicates the device has no moisture sensitivity restrictions and can be stored indefinitely without special environmental controls. MSL 3 (168 Hours) requires that the device be used within 168 hours of package opening if stored outside controlled humidity environments (typically 30% to 60% relative humidity at 23°C). The FDS6982AS offers superior handling flexibility. TSM4936DCS RLG substitution introduces additional supply chain and storage management requirements.

Q: Can DMN3033LSD-13 be used in applications requiring the full 8.6A rating of the FDS6982AS?

A: The DMN3033LSD-13 is rated for 6.9A continuous drain current, which is below the FDS6982AS maximum rating of 8.6A. Substitution is valid when circuit analysis confirms that sustained drain current does not exceed 6.9A. For applications requiring the full 8.6A capability, the SI4202DY-T1-GE3 (12.1A rating) is the appropriate substitute.

Q: Are all substitute parts RoHS3 compliant?

A: Yes, all four substitute parts (NTMD4820NR2G, DMN3033LSD-13, SI4202DY-T1-GE3, and TSM4936DCS RLG) maintain ROHS3 compliance, matching the FDS6982AS environmental certification status.

Q: What is the significance of the gate charge (Qg) parameter in substitute selection?

A: Gate charge determines the energy required to switch the MOSFET on and off, directly affecting gate driver circuit design and switching speed. The NTMD4820NR2G exhibits the lowest gate charge (7.7nC @ 4.5V), enabling faster switching and reduced gate driver power consumption. The SI4202DY-T1-GE3 shows slightly higher gate charge (17nC @ 10V), which remains acceptable for most applications. Lower gate charge values are advantageous in high-frequency switching applications.

Q: How should on-resistance (Rds On) differences be evaluated for substitute selection?

A: On-resistance directly affects power dissipation and thermal performance. Lower Rds On values reduce I²R losses. The SI4202DY-T1-GE3 (14mOhm) and DMN3033LSD-13 (20mOhm) both provide improved on-resistance compared to the FDS6982AS (28mOhm), resulting in lower junction temperatures and improved efficiency. The TSM4936DCS RLG (36mOhm) exhibits higher on-resistance, increasing thermal load. Substitute selection should account for thermal budget requirements.

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