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FDS6930B Equivalent & Substitute Parts
Part Overview
The FDS6930B is a dual N-channel MOSFET array manufactured by onsemi, rated for 30V drain-to-source voltage and 5.5A continuous drain current in an 8-SOIC surface mount package. This device features Logic Level Gate operation and is part of the PowerTrench® series. The FDS6930B currently holds Last Time Buy status, indicating that onsemi has discontinued this product line. Identifying equivalent and substitute parts is necessary for design continuity, long-term supply chain planning, and new product development initiatives.
Substiute Parts
Key Parameters
| Parameter | FDS6930B |
|---|---|
| Manufacturer | onsemi |
| Configuration | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5.5A |
| Rds On (Max) @ Id, Vgs | 38mOhm @ 5.5A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 3.8nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 412pF @ 15V |
| Power - Max | 900mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type | Surface Mount |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Product Status | Last Time Buy |
Substitute Part Grouping Explanation
Substitution of the FDS6930B is determined by the following critical parameters:
Electrical Compatibility Requirements:
- Configuration: 2 N-Channel (Dual) MOSFET array
- Drain to Source Voltage (Vdss): Minimum 30V
- Continuous Drain Current (Id): Minimum 5.5A at 25°C
- Gate Threshold Voltage (Vgs(th)): Logic Level operation (3V @ 250µA)
- On-State Resistance (Rds On): Maximum 38mOhm at rated current and 10V gate voltage
Mechanical Compatibility Requirements:
- Package: 8-SOIC surface mount (0.154", 3.90mm Width)
- Mounting Type: Surface Mount
Regulatory & Environmental Requirements:
- RoHS3 Compliance
- Moisture Sensitivity Level: 1 (Unlimited)
- Operating Temperature Range: -55°C ~ 150°C (TJ)
Substitute parts must meet or exceed all electrical parameters while maintaining identical package and mounting specifications. Parts with higher voltage ratings, higher current ratings, or lower on-state resistance are acceptable substitutes provided they maintain the same package footprint and pin configuration.
Parameter Comparison
| Parameter | FDS6930B (onsemi) | AO4840 (Alpha & Omega) | SI4936ADY-T1-GE3 (Vishay) | TSM4936DCS RLG (Taiwan Semi) |
|---|---|---|---|---|
| Configuration | 2 N-Channel (Dual) | 2 N-Channel (Dual) | 2 N-Channel (Dual) | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 30V | 40V | 30V | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5.5A | 6A | 4.4A | 5.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 38mOhm @ 5.5A, 10V | 30mOhm @ 6A, 10V | 36mOhm @ 5.9A, 10V | 36mOhm @ 5.9A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA | 3V @ 250µA | 3V @ 250µA | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 3.8nC @ 5V | 10.8nC @ 10V | 20nC @ 10V | 13nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 412pF @ 15V | 650pF @ 20V | Not Specified | 610pF @ 15V |
| Power - Max | 900mW | 2W | 1.1W | 3W |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 3 (168 Hours) |
| Product Status | Last Time Buy | Not For New Designs | Active | Not For New Designs |
Engineering Selection Recommendations
SI4936ADY-T1-GE3 (Vishay Siliconix)
The SI4936ADY-T1-GE3 is the preferred substitute for new designs. This device maintains the 30V Vdss rating and 8-SOIC package footprint identical to the FDS6930B. While the continuous drain current is rated at 4.4A (lower than the FDS6930B's 5.5A), the on-state resistance of 36mOhm at 5.9A and 10V gate voltage provides superior performance characteristics. The SI4936ADY-T1-GE3 carries Active product status, ensuring long-term availability and continued manufacturer support. ROHS3 compliance and MSL 1 rating match the original device specifications. The TrenchFET® series technology provides reliable operation across the full -55°C to 150°C temperature range.
TSM4936DCS RLG (Taiwan Semiconductor Corporation)
The TSM4936DCS RLG offers electrical performance exceeding the FDS6930B with 5.9A continuous drain current and 36mOhm on-state resistance. The 8-SOIC package maintains mechanical compatibility. However, this device carries Not For New Designs status and MSL 3 (168 Hours) moisture sensitivity, indicating limited long-term availability and stricter handling requirements during assembly. This part is suitable for legacy system maintenance and repair applications only.
AO4840 (Alpha & Omega Semiconductor Inc.)
The AO4840 provides the highest electrical performance with 40V Vdss rating, 6A continuous drain current, and 30mOhm on-state resistance. The 8-SOIC package maintains mechanical compatibility. However, the elevated Vdss rating (40V versus 30V) and Not For New Designs status limit its applicability. This part is suitable only for applications where the higher voltage rating provides design margin and where legacy component support is acceptable.
Summary
For new product designs, SI4936ADY-T1-GE3 is the recommended substitute. For existing designs requiring component replacement, TSM4936DCS RLG or AO4840 provide viable alternatives with superior electrical performance, subject to supply chain and product lifecycle constraints.
Frequently Asked Questions (FAQ)
Q: Can the SI4936ADY-T1-GE3 directly replace the FDS6930B in existing designs?
A: Yes. The SI4936ADY-T1-GE3 maintains identical 30V Vdss rating, 8-SOIC package footprint, and Logic Level Gate operation. The 4.4A continuous drain current rating is lower than the FDS6930B's 5.5A; however, the superior on-state resistance (36mOhm) and higher power dissipation capability (1.1W) provide equivalent or improved performance in most applications. Pin-to-pin compatibility is maintained.
Q: Why is the AO4840 rated for 40V instead of 30V?
A: The AO4840 is a higher-voltage variant within the dual N-channel MOSFET family. The 40V Vdss rating provides additional design margin for applications subject to voltage transients or overshoot conditions. The 8-SOIC package and Logic Level Gate operation remain compatible with the FDS6930B footprint and gate drive requirements.
Q: What is the significance of the TSM4936DCS RLG's MSL 3 rating?
A: MSL 3 (168 Hours) indicates that the device must be used within 168 hours of exposure to ambient conditions of 30°C and 85% relative humidity. This is more restrictive than the FDS6930B's MSL 1 (Unlimited) rating. Stricter moisture control during storage, handling, and assembly is required. MSL 1 devices have no time-to-use restrictions.
Q: Are all substitute parts available in the same packaging options as the FDS6930B?
A: All substitute parts listed are available in 8-SOIC surface mount packages with identical 0.154" (3.90mm) width specifications. The TSM4936DCS RLG is supplied in Tape & Reel (TR) format, while the SI4936ADY-T1-GE3 is also supplied in Tape & Reel format. The AO4840 is available in both Cut Tape (CT) and Digi-Reel® formats. Verify packaging availability with your supplier for specific procurement requirements.
Q: Which substitute part has the lowest on-state resistance?
A: The AO4840 has the lowest on-state resistance at 30mOhm @ 6A, 10V. The TSM4936DCS RLG and SI4936ADY-T1-GE3 both specify 36mOhm on-state resistance. The FDS6930B specifies 38mOhm @ 5.5A, 10V. Lower on-state resistance reduces power dissipation and heat generation in switching applications.
Q: Can I use the AO4840 in a 30V-rated circuit?
A: Yes. The AO4840's 40V Vdss rating exceeds the 30V requirement, providing additional voltage margin. The device operates safely at 30V and below. No circuit modifications are required for voltage compatibility.
Q: What is the difference between the FDS6930B and SI4936ADY-T1-GE3 gate charge specifications?
A: The FDS6930B specifies 3.8nC gate charge @ 5V, while the SI4936ADY-T1-GE3 specifies 20nC @ 10V. Gate charge is measured at different gate voltage levels, making direct comparison difficult. The higher gate charge of the SI4936ADY-T1-GE3 at 10V reflects its different internal structure and may require slightly higher gate drive current for equivalent switching speed. Verify gate drive circuit capability during design validation.
Q: Are all substitute parts RoHS3 compliant?
A: Yes. All substitute parts listed (AO4840, SI4936ADY-T1-GE3, and TSM4936DCS RLG) are ROHS3 compliant, matching the FDS6930B's environmental certification status.
Q: Which substitute part is recommended for new product development?
A: The SI4936ADY-T1-GE3 is recommended for new product development. This device carries Active product status, ensuring continued manufacturer support and long-term availability. The combination of 30V Vdss rating, 4.4A continuous drain current, superior on-state resistance, and MSL 1 moisture sensitivity rating provides optimal balance between performance and supply chain reliability.
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