FDS6910 Equivalent & Substitute Parts

Part Overview

The FDS6910 is a dual N-channel MOSFET array manufactured by onsemi, designed for surface mount applications in the 30V logic-level gate category. This device features a PowerTrench® architecture with 7.5A continuous drain current capability and 900mW maximum power dissipation in an 8-SOIC package.

The FDS6910 is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity and ensure component availability for new production runs, repairs, and legacy system support.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	30	V
Current - Continuous Drain (Id) @ 25°C	7.5	A
Rds On (Max) @ Id, Vgs	13 @ 7.5A, 10V	mOhm
Vgs(th) (Max) @ Id	3 @ 250µA	V
Gate Charge (Qg) (Max) @ Vgs	24 @ 10V	nC
Input Capacitance (Ciss) (Max) @ Vds	1130 @ 15V	pF
Power - Max	900	mW
Configuration	2 N-Channel (Dual)	—
Package / Case	8-SOIC (0.154", 3.90mm Width)	—
Operating Temperature Range	-55 to 150	°C (TJ)

Substitute Part Grouping Explanation

Substitution of the FDS6910 is determined by the following critical parameters:

Electrical Compatibility Requirements:

Drain to Source Voltage (Vdss): Must equal or exceed 30V
Configuration: Must be 2 N-Channel (Dual) in 8-SOIC package
Operating Temperature Range: Must span -55°C to 150°C (TJ)
Mounting Type: Must be Surface Mount
Package / Case: Must be 8-SOIC (0.154", 3.90mm Width)

Performance Parameters (Allowable Variation):

Current - Continuous Drain (Id): Substitute must meet or exceed 7.5A
Rds On (Max): Lower values indicate improved performance; values up to 22mOhm are acceptable
Vgs(th) (Max): Range 2.5V to 3V acceptable for logic-level gate operation
Gate Charge (Qg): Lower values reduce switching losses; range 11nC to 25.1nC acceptable
Input Capacitance (Ciss): Range 448pF to 1415pF acceptable
Power - Max: Must equal or exceed 900mW

Compliance Requirements:

RoHS3 Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected or REACH Affected acceptable

Three substitute parts meet these criteria and are listed below.

Parameter Comparison

Parameter	FDS6910 (Main)	AO4842	DMN3015LSD-13	SI4202DY-T1-GE3
Manufacturer	onsemi	Alpha & Omega Semiconductor Inc.	Diodes Incorporated	Vishay Siliconix
Drain to Source Voltage (Vdss)	30V	30V	30V	30V
Current - Continuous Drain (Id) @ 25°C	7.5A	—	8.4A (Ta)	12.1A
Rds On (Max) @ Id, Vgs	13mOhm @ 7.5A, 10V	22mOhm @ 7.5A, 10V	15mOhm @ 12A, 10V	14mOhm @ 8A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA	2.6V @ 250µA	2.5V @ 250µA	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	24nC @ 10V	11nC @ 10V	25.1nC @ 10V	17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1130pF @ 15V	448pF @ 15V	1415pF @ 15V	710pF @ 15V
Power - Max	900mW	2W	1.2W	3.7W
Configuration	2 N-Channel (Dual)	2 N-Channel (Dual)	2 N-Channel (Dual)	2 N-Channel (Dual)
Package / Case	8-SOIC	8-SOIC	8-SOIC	8-SOIC
Operating Temperature Range	-55 to 150°C (TJ)	-55 to 150°C (TJ)	-55 to 150°C (TJ)	-55 to 150°C (TJ)
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
Product Status	Obsolete	Not For New Designs	Active	Active

Engineering Selection Recommendations

Primary Recommendation: SI4202DY-T1-GE3

The SI4202DY-T1-GE3 manufactured by Vishay Siliconix is the preferred substitute for the FDS6910. This device is classified as Active and suitable for new designs. It exceeds the FDS6910 specifications in continuous drain current (12.1A versus 7.5A), provides superior on-resistance (14mOhm versus 13mOhm), and delivers significantly higher power dissipation capability (3.7W versus 900mW). The SI4202DY-T1-GE3 maintains full electrical and thermal compatibility within the 8-SOIC package footprint and meets all RoHS3 and MSL requirements.

Secondary Recommendation: DMN3015LSD-13

The DMN3015LSD-13 manufactured by Diodes Incorporated is an Active product suitable for new designs. This substitute meets or exceeds all FDS6910 electrical parameters, including continuous drain current (8.4A versus 7.5A) and power dissipation (1.2W versus 900mW). On-resistance is slightly higher at 15mOhm compared to 13mOhm. Full compliance with RoHS3 and MSL requirements is maintained.

Tertiary Recommendation: AO4842

The AO4842 manufactured by Alpha & Omega Semiconductor Inc. is classified as Not For New Designs. This substitute meets the core electrical requirements (30V Vdss, dual N-channel configuration, 8-SOIC package) and provides enhanced power dissipation (2W versus 900mW). However, on-resistance is higher at 22mOhm. This part is suitable only for legacy system support and repair applications where new design qualification is not required.

All three substitutes maintain compliance with RoHS3 standards, MSL Level 1 (Unlimited), and the required operating temperature range of -55°C to 150°C (TJ).

Frequently Asked Questions (FAQ)

Q: Can the SI4202DY-T1-GE3 be used as a direct replacement for the FDS6910 in existing designs?

A: Yes. The SI4202DY-T1-GE3 is electrically and mechanically compatible with the FDS6910. Both devices feature identical 30V Vdss rating, dual N-channel configuration, and 8-SOIC package geometry. The SI4202DY-T1-GE3 exceeds FDS6910 performance specifications in current handling and power dissipation, making it suitable for direct substitution without circuit modification.

Q: What is the difference between the AO4842 and the other substitutes?

A: The AO4842 is classified as Not For New Designs, indicating it is intended for legacy applications only. While it meets the core electrical requirements (30V Vdss, 8-SOIC package, dual N-channel), it exhibits higher on-resistance (22mOhm) compared to the FDS6910 (13mOhm) and the other active substitutes. The AO4842 is appropriate for repair and maintenance of existing systems but should not be selected for new product development.

Q: Are all substitute parts available in the same packaging format as the FDS6910?

A: Yes. All three substitute parts are available in 8-SOIC (0.154", 3.90mm Width) surface mount packages, matching the FDS6910 footprint. This ensures mechanical compatibility with existing printed circuit board layouts without requiring design modifications.

Q: What is the significance of the Product Status field in the comparison table?

A: Product Status indicates the manufacturer's support and qualification status. Active products are fully supported and suitable for new designs. Not For New Designs indicates the product is available but not recommended for new applications. Obsolete indicates the product is no longer manufactured or supported. For new designs, SI4202DY-T1-GE3 and DMN3015LSD-13 are preferred due to their Active status.

Q: How do the on-resistance values affect circuit performance?

A: On-resistance (Rds On) directly impacts power dissipation and heat generation. Lower on-resistance values reduce I²R losses during device operation. The FDS6910 specifies 13mOhm at 7.5A and 10V gate voltage. The SI4202DY-T1-GE3 provides 14mOhm, the DMN3015LSD-13 provides 15mOhm, and the AO4842 provides 22mOhm. All values remain within acceptable operating ranges for typical switching applications.

Q: Are there compliance or certification differences between the substitutes?

A: All substitute parts are RoHS3 Compliant and carry MSL Level 1 (Unlimited) ratings, matching the FDS6910. The SI4202DY-T1-GE3 carries REACH Affected status, while the FDS6910, AO4842, and DMN3015LSD-13 are REACH Unaffected. This distinction may be relevant for applications subject to REACH regulatory requirements.

Q: What does Logic Level Gate mean in the FET Feature field?

A: Logic Level Gate indicates the device is designed to operate with standard logic-level gate drive voltages (typically 3.3V to 5V), as opposed to higher gate voltage requirements. The FDS6910 and SI4202DY-T1-GE3 both feature Logic Level Gate capability, enabling direct interface with standard digital logic circuits without additional gate drive circuitry.

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