FDS6690AS N-Channel 30V 10A MOSFET Equivalent & Substitute Parts

Part Overview

The FDS6690AS is an N-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage with 10A continuous drain current at 25°C. This device is housed in an 8-SOIC surface mount package and is part of the PowerTrench® and SyncFET™ series. The FDS6690AS is classified as obsolete, making equivalent and substitute parts necessary for new designs and ongoing production requirements. Substitute parts must maintain compatibility across electrical ratings, thermal characteristics, and mechanical packaging to ensure direct replacement capability.

Key Parameters

Parameter	FDS6690AS	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	10	A
On-Resistance (Rds On Max) @ 10A, 10V	12	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 1mA	3	V
Gate Charge (Qg Max) @ 10V	23	nC
Input Capacitance (Ciss Max) @ 15V	910	pF
Power Dissipation (Max)	2.5	W
Operating Temperature Range	-55 to 150	°C
Package Type	8-SOIC	-
Mounting Type	Surface Mount	-

Substitute Part Grouping Explanation

Substitute parts for the FDS6690AS are selected based on strict electrical and mechanical compatibility criteria. All substitute candidates must satisfy the following requirements:

Primary Compatibility Criteria:

Drain-to-Source Voltage (Vdss): 30V minimum
Continuous Drain Current (Id): 10A or greater at 25°C
On-Resistance (Rds On): 12mOhm or lower at rated current and 10V gate voltage
Package Type: 8-SOIC or equivalent 8-pin surface mount configuration
FET Type: N-Channel MOSFET technology
Operating Temperature: -55°C to 150°C or compatible range
RoHS3 Compliance and REACH Unaffected status

Secondary Compatibility Considerations:

Gate Threshold Voltage (Vgs(th)): Compatibility with existing gate drive circuits
Gate Charge (Qg): Switching speed and drive circuit requirements
Input Capacitance (Ciss): Gate drive current demands
Power Dissipation: Thermal management capability

Substitute parts are grouped into two categories: direct electrical equivalents with matching or superior electrical characteristics, and functional alternatives that meet minimum performance requirements while offering different trade-offs in gate charge, capacitance, or thermal characteristics.

Parameter Comparison

Parameter	FDS6690AS (onsemi)	DMG4710SSS-13 (Diodes Inc.)	DMN3016LSS-13 (Diodes Inc.)	RSH090N03TB1 (Rohm)	RXH125N03TB1 (Rohm)	TSM180N03CS RLG (TSC)	Unit
Vdss	30	30	30	30	30	30	V
Id @ 25°C	10	8.8	10.3	9	12.5	9	A
Rds On (Max) @ 10V	12 @ 10A	12.5 @ 11.7A	12 @ 12A	16 @ 9A	12 @ 12.5A	18 @ 8A	mOhm
Vgs(th) (Max)	3 @ 1mA	2.3 @ 250µA	2.5 @ 250µA	2.5 @ 1mA	2.5 @ 1mA	2 @ 250µA	V
Qg (Max) @ 10V	23	43	25.1	15 @ 5V	12.7 @ 5V	14 @ 4.5V	nC
Ciss (Max) @ 15V	910	1849 @ 15V	1415 @ 15V	810 @ 10V	1000 @ 10V	345 @ 25V	pF
Power Dissipation (Max)	2.5	1.54	1.5	2	2	2.5	W
Operating Temp Range	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	°C
Package	8-SOIC	8-SO	8-SO	8-SOP	8-SOP	8-SOP	-
Product Status	Obsolete	Active	Active	Active	Active	Active	-
RoHS3 Compliance	Yes	Yes	Yes	Yes	Yes	Yes	-

Engineering Selection Recommendations

Primary Substitute: DMN3016LSS-13 (Diodes Incorporated)

The DMN3016LSS-13 provides the closest electrical match to the FDS6690AS. It maintains the 30V Vdss rating, exceeds the 10A continuous drain current requirement with 10.3A capability, and matches the 12mOhm on-resistance specification at 10V gate voltage. The device is in active production status, ensuring long-term availability. Gate threshold voltage and gate charge characteristics are compatible with standard gate drive circuits. The 8-SO package is mechanically equivalent to the 8-SOIC footprint. RoHS3 compliance and REACH unaffected status align with regulatory requirements.

Secondary Substitute: RXH125N03TB1 (Rohm Semiconductor)

The RXH125N03TB1 exceeds FDS6690AS specifications with 12.5A continuous drain current and maintains 12mOhm on-resistance at 10V. This device offers superior current handling capability for applications requiring headroom above 10A. Gate charge is reduced to 12.7nC at 5V, enabling faster switching characteristics. Active production status and full regulatory compliance support long-term deployment. The 8-SOP package is mechanically compatible with the original 8-SOIC footprint.

Tertiary Substitute: TSM180N03CS RLG (Taiwan Semiconductor Corporation)

The TSM180N03CS RLG maintains 30V Vdss and 9A continuous drain current with 2.5W power dissipation matching the original device. This device features the lowest input capacitance at 345pF, reducing gate drive circuit demands. Gate charge of 14nC at 4.5V supports efficient switching operation. Active production status ensures availability. Moisture Sensitivity Level 3 (168 Hours) requires controlled storage conditions compared to MSL 1 of the primary device.

Alternative Substitute: RSH090N03TB1 (Rohm Semiconductor)

The RSH090N03TB1 provides 9A continuous drain current with 16mOhm on-resistance at 9A and 10V. This device is suitable for applications where the 10A specification is not critical and lower gate charge (15nC at 5V) is beneficial. Active production status and full compliance support deployment. On-resistance is higher than the original specification, requiring thermal analysis for power-dissipative applications.

Not Recommended: DMG4710SSS-13 (Diodes Incorporated)

The DMG4710SSS-13 falls below the 10A continuous drain current requirement with 8.8A maximum rating. Gate charge of 43nC at 10V significantly exceeds the original specification, increasing gate drive circuit complexity. Power dissipation of 1.54W is reduced, but the lower current rating limits application scope. This device is suitable only for applications where 8.8A current is sufficient.

Frequently Asked Questions (FAQ)

Q: Can the DMN3016LSS-13 directly replace the FDS6690AS in existing PCB designs?

A: Yes. The DMN3016LSS-13 is mechanically and electrically compatible with the FDS6690AS. Both devices use 8-pin surface mount packages with identical 0.154" (3.90mm) width specifications. Electrical parameters meet or exceed the original device requirements. No PCB layout modifications are required.

Q: What is the difference between 8-SOIC, 8-SO, and 8-SOP package designations?

A: These designations refer to variations of 8-pin surface mount packages with identical footprints and pin spacing. 8-SOIC (Small Outline Integrated Circuit), 8-SO (Small Outline), and 8-SOP (Small Outline Package) are functionally interchangeable for PCB placement and soldering purposes. All substitute parts listed maintain the 0.154" (3.90mm) width specification.

Q: Why does the RXH125N03TB1 have lower gate charge than the FDS6690AS despite higher current rating?

A: Gate charge is determined by the silicon die design and gate oxide characteristics, not solely by current rating. The RXH125N03TB1 uses optimized gate structure for reduced switching losses, resulting in 12.7nC gate charge at 5V compared to 23nC for the FDS6690AS at 10V. This enables faster switching and reduced gate drive power consumption.

Q: Is the TSM180N03CS RLG suitable for high-volume production?

A: The TSM180N03CS RLG is in active production status with 5,780 pieces in current inventory. Moisture Sensitivity Level 3 (168 Hours) requires controlled storage and handling procedures. For high-volume applications, the DMN3016LSS-13 or RXH125N03TB1 with MSL 1 (Unlimited) rating may be preferred to reduce moisture management complexity.

Q: What thermal considerations apply when substituting with the RXH125N03TB1?

A: The RXH125N03TB1 maintains 2W power dissipation rating compared to 2.5W for the FDS6690AS. At equivalent current levels, thermal performance is comparable. The higher current capability (12.5A vs. 10A) allows operation at lower junction temperatures in current-limited applications. Thermal design calculations should account for actual operating current and ambient temperature conditions.

Q: Can the DMG4710SSS-13 be used in applications rated for 10A continuous current?

A: No. The DMG4710SSS-13 is rated for 8.8A continuous drain current, which is below the 10A specification. Using this device in 10A applications would exceed its rated current capacity, resulting in excessive junction temperature rise and potential device failure. The DMG4710SSS-13 is suitable only for applications where 8.8A or lower current is required.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed (DMG4710SSS-13, DMN3016LSS-13, RSH090N03TB1, RXH125N03TB1, and TSM180N03CS RLG) are RoHS3 compliant and REACH unaffected, matching the regulatory status of the FDS6690AS.

Q: What is the significance of on-resistance (Rds On) matching in MOSFET substitution?

A: On-resistance directly determines power dissipation and thermal performance. The FDS6690AS specifies 12mOhm maximum at 10A and 10V gate voltage. Substitute parts with equal or lower on-resistance maintain equivalent thermal characteristics. Higher on-resistance (such as the 16mOhm of RSH090N03TB1) increases power dissipation and requires thermal design verification.

Q: How does gate threshold voltage (Vgs(th)) affect circuit compatibility?

A: Gate threshold voltage determines the minimum gate-source voltage required to turn the device on. The FDS6690AS specifies 3V maximum at 1mA. Substitute parts with lower Vgs(th) (2V to 2.5V) turn on at lower gate voltages, potentially improving efficiency in low-voltage gate drive circuits. Higher Vgs(th) requires higher gate drive voltage. All listed substitutes are compatible with standard 5V and 10V gate drive circuits.

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