FDS6688S MOSFET N-Channel 30V 16A Equivalent & Substitute Parts

Part Overview

The FDS6688S is an N-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage and 16A continuous drain current in a surface mount 8-SOIC package. This device is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support and production continuity. The PowerTrench® series technology provides efficient switching performance in compact form factor suitable for power management applications.

Substiute Parts

FDS6688S

onsemiIn Stock: 25713FDS6688S Datasheet

Current PartRFQ

BSO040N03MSGXUMA1

Infineon TechnologiesIn Stock: 3239BSO040N03MSGXUMA1 Datasheet

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DMN3010LSS-13

Diodes IncorporatedIn Stock: 15555DMN3010LSS-13 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the FDS6688S is determined by strict equivalence across the following critical parameters:

Mandatory Matching Criteria:

• Drain to Source Voltage (Vdss): 30V
• Continuous Drain Current (Id): 16A minimum
• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Mounting Type: Surface Mount
• Package footprint compatibility: 8-SOIC (0.154", 3.90mm Width)

Acceptable Variation Parameters:

• On-Resistance (Rds On): Substitute values must not exceed the maximum specified for the application
• Gate Charge (Qg): Lower values indicate improved switching performance
• Input Capacitance (Ciss): Variation acceptable within circuit design margins
• Operating Temperature Range: Substitute minimum temperature must support -55°C; maximum temperature may vary
• Power Dissipation: Substitute values reflect thermal performance differences

The identified substitute parts meet these criteria while maintaining functional equivalence for direct board-level replacement.

Parameter Comparison

Engineering Selection Recommendations

BSO040N03MSGXUMA1 (Infineon Technologies OptiMOS™)

This substitute is classified as "Not For New Designs" but remains functionally equivalent. The device demonstrates superior on-resistance performance (4 mOhm vs. 6 mOhm) and lower gate charge (73 nC vs. 78 nC), resulting in improved switching efficiency. Power dissipation is reduced to 1.56W, indicating better thermal performance. The maximum operating temperature is limited to 150°C compared to 175°C for the FDS6688S. Moisture sensitivity level is elevated to MSL 3, requiring controlled storage conditions (168-hour floor life). ROHS3 compliance is confirmed. This part is suitable for legacy system support where design changes are not feasible.

DMN3010LSS-13 (Diodes Incorporated)

This substitute carries an "Active" product status, providing the longest supply chain availability and design support. The device maintains identical power dissipation (2.5W) and operating temperature minimum (-55°C), with maximum temperature at 150°C. On-resistance is slightly higher at 9 mOhm, representing a 50% increase over the FDS6688S specification. Gate charge is significantly lower at 43.7 nC, providing superior switching performance. Input capacitance is reduced to 2096 pF, improving high-frequency operation. Moisture sensitivity remains at MSL 1 (unlimited floor life). ROHS3 compliance is confirmed. This part is recommended for new production and ongoing supply continuity.

Frequently Asked Questions (FAQ)

Q: Can the BSO040N03MSGXUMA1 be used as a direct replacement for the FDS6688S?

A: Yes, the BSO040N03MSGXUMA1 meets all mandatory electrical and mechanical criteria for direct substitution. Both devices share 30V Vdss rating, 16A continuous drain current, and 8-SOIC package footprint. The Infineon device offers improved on-resistance and lower gate charge. However, the maximum operating temperature is reduced to 150°C, and moisture sensitivity level is elevated to MSL 3, requiring controlled handling during assembly.

Q: Why is the DMN3010LSS-13 recommended over the BSO040N03MSGXUMA1?

A: The DMN3010LSS-13 carries an "Active" product status, ensuring long-term availability and manufacturer support. The Diodes device maintains the same power dissipation rating (2.5W) and moisture sensitivity level (MSL 1) as the original FDS6688S. While on-resistance is slightly higher at 9 mOhm, the gate charge is significantly lower at 43.7 nC, providing superior switching performance. For new production and long-term supply security, the DMN3010LSS-13 is the preferred choice.

Q: Are there package compatibility concerns between these substitutes?

A: All three devices utilize the 8-SOIC package with identical footprint dimensions (0.154", 3.90mm Width). Direct board-level replacement is possible without PCB layout modifications. Pin configuration and lead spacing are compatible across all three parts.

Q: What is the impact of the higher on-resistance in the DMN3010LSS-13?

A: The DMN3010LSS-13 specifies 9 mOhm on-resistance compared to 6 mOhm for the FDS6688S. This 50% increase results in higher conduction losses during operation. Power dissipation impact depends on circuit duty cycle and switching frequency. For applications with continuous high-current operation, thermal analysis is required to confirm the 2.5W power dissipation rating remains adequate.

Q: What are the implications of the reduced maximum operating temperature in the Infineon device?

A: The BSO040N03MSGXUMA1 maximum junction temperature is 150°C versus 175°C for the FDS6688S. This 25°C reduction limits thermal margin in high-temperature environments. Applications operating near the upper temperature limit of the original device may require thermal redesign or active cooling to maintain safe operation with the Infineon substitute.

Q: How does moisture sensitivity level affect component handling?

A: The FDS6688S and DMN3010LSS-13 both carry MSL 1 rating, allowing unlimited floor life after moisture barrier bag opening. The BSO040N03MSGXUMA1 carries MSL 3 rating, restricting floor life to 168 hours after bag opening. Components must be stored in controlled humidity environments and baked according to IPC-A-610 standards before assembly. This increases handling complexity and inventory management requirements.

Q: Are all three devices RoHS compliant?

A: The BSO040N03MSGXUMA1 and DMN3010LSS-13 are confirmed ROHS3 compliant. The FDS6688S RoHS status is not specified in the provided data. For applications requiring RoHS compliance certification, the Infineon and Diodes devices provide documented compliance.