FDS6680 N-Channel MOSFET 30V 11.5A Equivalent & Substitute Parts

Part Overview

The FDS6680 is an N-Channel MOSFET manufactured by onsemi in the PowerTrench® series, rated for 30V drain-to-source voltage with 11.5A continuous drain current at 25°C. The device is packaged in 8-SOIC surface mount configuration with a maximum power dissipation of 2.5W. The FDS6680 is classified as obsolete, making equivalent and substitute parts necessary for new designs and ongoing production requirements. Substitute parts must maintain compatibility across drain-to-source voltage, continuous drain current, gate-source voltage ratings, and surface mount packaging to ensure functional equivalence in circuit applications.

Key Parameters

Parameter	FDS6680	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	11.5	A
On-State Resistance (Rds On) @ Id, Vgs	10 mOhm @ 11.5A, 10V	mOhm
Gate-Source Threshold Voltage (Vgs(th)) @ Id	3 @ 250µA	V
Gate Charge (Qg) @ Vgs	27 @ 5V	nC
Maximum Gate-Source Voltage (Vgs Max)	±20	V
Input Capacitance (Ciss) @ Vds	2070 @ 15V	pF
Power Dissipation (Max)	2.5	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Surface Mount	—
Package	8-SOIC	—
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitute parts for the FDS6680 are selected based on the following critical parameters that determine functional equivalence:

Primary Matching Criteria:

Drain-to-Source Voltage (Vdss): 30V minimum
Continuous Drain Current (Id): 11.5A or greater at 25°C
Gate-Source Voltage Rating (Vgs Max): ±20V
Mounting Type: Surface Mount
Package Type: 8-SOIC or equivalent 8-pin surface mount package

Secondary Compatibility Parameters:

On-State Resistance (Rds On): Lower or equivalent values ensure improved or comparable performance
Operating Temperature Range: -55°C to 150°C or greater
Power Dissipation: 2.5W or greater capacity
Gate Charge (Qg): Lower values reduce switching losses
Input Capacitance (Ciss): Lower values improve switching speed

Substitute parts must satisfy all primary matching criteria. Secondary parameters may vary within acceptable engineering tolerances to accommodate different manufacturing processes and design improvements across manufacturers.

Parameter Comparison

Parameter	FDS6680	FDS6680A	DMN3010LSS-13	IRF7821TRPBF	RSS100N03TB	SI4420BDY-T1-E3	SI4686DY-T1-GE3	Unit
Manufacturer	onsemi	onsemi	Diodes Inc.	Infineon	Rohm	Vishay	Vishay	—
Vdss	30	30	30	30	30	30	30	V
Id @ 25°C	11.5	12.5	16	13.6	10	9.5	18.2	A
Rds On (Max)	10	9.5	9	9.1	13	8.5	9.5	mOhm
Vgs(th) @ Id	3 @ 250µA	3 @ 250µA	2 @ 250µA	1 @ 250µA	2.5 @ 1mA	3 @ 250µA	3 @ 250µA	V
Vgs Max	±20	±20	±20	±20	20	±20	±20	V
Qg @ Vgs	27 @ 5V	23 @ 5V	43.7 @ 10V	14 @ 4.5V	14 @ 5V	50 @ 10V	26 @ 10V	nC
Ciss @ Vds	2070 @ 15V	1620 @ 15V	2096 @ 15V	1010 @ 15V	1070 @ 10V	—	1220 @ 15V	pF
Power Dissipation (Max)	2.5	2.5	2.5	2.5	2	1.4	3 / 5.2	W
Operating Temp Range	-55 to 150	-55 to 150	-55 to 150	-55 to 155	—	-55 to 150	-55 to 150	°C
Package	8-SOIC	8-SOIC	8-SOP	8-SO	8-SOP	8-SOIC	8-SOIC	—
Product Status	Obsolete	Active	Active	Active	Active	Active	Active	—
RoHS Status	—	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

FDS6680A (onsemi)

The FDS6680A is the direct successor to the FDS6680 within the onsemi PowerTrench® series. It maintains identical voltage and power ratings while providing improved continuous drain current (12.5A versus 11.5A) and reduced on-state resistance (9.5 mOhm versus 10 mOhm). The FDS6680A carries Active product status and ROHS3 compliance, making it the preferred choice for new designs requiring onsemi technology. Pin-compatible in 8-SOIC packaging.

IRF7821TRPBF (Infineon Technologies)

The IRF7821TRPBF is an Infineon HEXFET® device meeting all primary matching criteria with 13.6A continuous drain current and 9.1 mOhm on-state resistance. It features the lowest gate charge (14 nC) and input capacitance (1010 pF) among substitute options, resulting in reduced switching losses and improved efficiency. Operating temperature extends to 155°C. Active product status with ROHS3 compliance. Compatible in 8-SO package.

DMN3010LSS-13 (Diodes Incorporated)

The DMN3010LSS-13 from Diodes Incorporated provides the highest continuous drain current (16A) among substitutes with 9 mOhm on-state resistance. It maintains 30V Vdss rating and 2.5W power dissipation. Active product status with ROHS3 compliance. Packaged in 8-SOP configuration. Suitable for applications requiring maximum current capacity within the 30V class.

SI4686DY-T1-GE3 (Vishay Siliconix)

The SI4686DY-T1-GE3 is a Vishay TrenchFET® and WFET® device offering the highest continuous drain current (18.2A at Tc) with enhanced power dissipation (3W at Ta, 5.2W at Tc). It meets all primary matching criteria with 9.5 mOhm on-state resistance. Active product status with ROHS3 compliance. Packaged in 8-SOIC. Suitable for high-current applications with thermal management capability.

SI4420BDY-T1-E3 (Vishay Siliconix)

The SI4420BDY-T1-E3 is a Vishay TrenchFET® device with 9.5A continuous drain current and 8.5 mOhm on-state resistance. It features the lowest power dissipation (1.4W) among substitutes. Active product status with ROHS3 compliance. Packaged in 8-SOIC. Suitable for applications where thermal dissipation is constrained.

RSS100N03TB (Rohm Semiconductor)

The RSS100N03TB from Rohm Semiconductor provides 10A continuous drain current with 13 mOhm on-state resistance. It maintains 30V Vdss rating with 2W power dissipation. Active product status with ROHS3 compliance. Packaged in 8-SOP. Suitable for applications with moderate current requirements and thermal constraints.

Frequently Asked Questions (FAQ)

Q: Can the FDS6680 be directly replaced with FDS6680A?

A: Yes. The FDS6680A is the active production successor to the obsolete FDS6680 within the onsemi PowerTrench® series. Both devices share identical 30V Vdss rating, 8-SOIC packaging, and ±20V Vgs maximum rating. The FDS6680A provides improved specifications (12.5A versus 11.5A drain current, 9.5 mOhm versus 10 mOhm Rds On) and carries ROHS3 compliance. Pin-for-pin compatible replacement.

Q: What is the minimum continuous drain current required for a substitute part?

A: Substitute parts must provide continuous drain current of 11.5A or greater at 25°C to meet or exceed the FDS6680 specification. Parts with lower current ratings (such as SI4420BDY-T1-E3 at 9.5A or RSS100N03TB at 10A) do not satisfy this primary matching criterion and are not suitable for direct replacement in applications requiring the full 11.5A rating.

Q: Are all substitute parts available in 8-SOIC packaging?

A: No. While FDS6680A and SI4686DY-T1-GE3 and SI4420BDY-T1-E3 are packaged in 8-SOIC, the DMN3010LSS-13 and RSS100N03TB are packaged in 8-SOP. Although both packages are 8-pin surface mount configurations with similar footprints (0.154" width, 3.90mm), PCB layout verification is required before substitution to confirm pin compatibility and thermal pad alignment.

Q: What is the significance of on-state resistance (Rds On) variation among substitutes?

A: On-state resistance directly affects power dissipation and heat generation during device operation. Lower Rds On values reduce conduction losses. The FDS6680 specifies 10 mOhm maximum. Substitute parts range from 8.5 mOhm (SI4420BDY-T1-E3) to 13 mOhm (RSS100N03TB). Lower Rds On values improve efficiency but may require verification of gate drive circuit compatibility and switching characteristics in the target application.

Q: Can substitute parts with higher drain current ratings be used in place of the FDS6680?

A: Yes, provided all other electrical parameters remain compatible. Parts with higher current ratings (DMN3010LSS-13 at 16A, SI4686DY-T1-GE3 at 18.2A) are suitable for FDS6680 replacement. Higher current ratings provide design margin and do not create functional incompatibility. However, thermal management and PCB layout must accommodate the device's power dissipation characteristics.

Q: What is the importance of gate charge (Qg) in substitute selection?

A: Gate charge affects switching speed and gate drive circuit requirements. The FDS6680 specifies 27 nC at 5V. Substitute parts range from 14 nC (IRF7821TRPBF) to 50 nC (SI4420BDY-T1-E3). Lower gate charge reduces switching losses and allows faster switching frequencies. Higher gate charge may require increased gate drive current or extended switching times. Gate drive circuit verification is necessary when substituting parts with significantly different Qg values.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All active substitute parts listed (FDS6680A, DMN3010LSS-13, IRF7821TRPBF, RSS100N03TB, SI4420BDY-T1-E3, SI4686DY-T1-GE3) carry ROHS3 compliance certification. The original FDS6680 does not specify RoHS status due to its obsolete classification. ROHS3 compliance ensures compliance with current environmental and regulatory requirements for new designs.

Q: What operating temperature range should be verified for substitute parts?

A: The FDS6680 operates from -55°C to 150°C (TJ). Most substitute parts maintain this range. IRF7821TRPBF extends to 155°C. RSS100N03TB specifies only 150°C maximum without explicit minimum temperature documentation. Verify operating temperature requirements against application specifications before final part selection.

Q: How should package differences between 8-SOIC and 8-SOP be evaluated?

A: Both 8-SOIC and 8-SOP are 8-pin surface mount packages with 0.154" (3.90mm) width. Pin pitch and thermal pad dimensions are similar but not identical. PCB footprint libraries must be verified for compatibility. Thermal pad size and connection patterns may differ, affecting heat dissipation performance. Consult manufacturer datasheets and PCB layout guidelines before substituting between package types.

Q: What is the REACH compliance status of substitute parts?

A: All substitute parts listed carry REACH Unaffected status, indicating compliance with REACH (Registration, Evaluation, Authorization and Restriction of Chemicals) regulations. This status applies to the FDS6680 as well. REACH compliance is maintained across all substitute options.

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