FDS6675 P-Channel MOSFET 30V 11A Equivalent & Substitute Parts

Part Overview

The FDS6675 is a P-Channel MOSFET manufactured by onsemi in the PowerTrench® series, rated for 30V drain-to-source voltage and 11A continuous drain current in an 8-SOIC surface mount package. This device is classified as obsolete, necessitating identification of active equivalent and substitute components for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, thermal characteristics, and mechanical packaging to ensure direct replacement capability in existing circuit applications.

Key Parameters

Parameter	FDS6675 Value	Unit
FET Type	P-Channel	—
Drain to Source Voltage (Vdss)	30	V
Current - Continuous Drain (Id) @ 25°C	11	A
Rds On (Max) @ Id, Vgs	14	mOhm @ 11A, 10V
Vgs(th) (Max) @ Id	3	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	42	nC @ 5V
Vgs (Max)	±20	V
Input Capacitance (Ciss) (Max) @ Vds	3000	pF @ 15V
Power Dissipation (Max)	2.5	W
Operating Temperature	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	8-SOIC (0.154", 3.90mm Width)	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the FDS6675 is determined by strict adherence to the following electrical and mechanical criteria:

Primary Substitution Criteria:

FET Type: P-Channel topology required
Drain to Source Voltage (Vdss): Minimum 30V rating
Current - Continuous Drain (Id): Minimum 11A at 25°C
Rds On (Max): Not to exceed 14 mOhm @ 11A, 10V
Vgs(th) (Max): Not to exceed 3V @ 250µA
Vgs (Max): Minimum ±20V gate voltage rating
Power Dissipation (Max): Minimum 2.5W
Operating Temperature: -55°C to 150°C (TJ)
Mounting Type: Surface Mount required
Package / Case: 8-SOIC (0.154", 3.90mm Width) or equivalent 8-SO/8-SOP footprint
RoHS Status: ROHS3 Compliant required
MSL: Level 1 preferred for unlimited moisture sensitivity

Substitute Classification:

Direct Manufacturer Equivalents (onsemi PowerTrench® Series): Parts maintaining identical base product specifications with active product status and enhanced electrical performance.

Cross-Manufacturer Substitutes (Infineon HEXFET® Series): Parts from alternative manufacturers meeting or exceeding electrical specifications with compatible 8-SO packaging.

Similar Alternatives (Rohm Semiconductor & Taiwan Semiconductor Corporation): Parts with comparable electrical characteristics and 8-SOP packaging, subject to thermal and power dissipation constraints.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On Max (mOhm)	Vgs(th) Max (V)	Qg Max (nC)	Vgs Max (±V)	Ciss Max (pF)	Power Diss (W)	Package	Product Status
FDS6675	onsemi	30	11	14 @ 11A, 10V	3 @ 250µA	42 @ 5V	±20	3000 @ 15V	2.5	8-SOIC	Obsolete
FDS6675BZ	onsemi	30	11	13 @ 11A, 10V	3 @ 250µA	62 @ 10V	±25	2470 @ 15V	2.5	8-SOIC	Active
FDS6679AZ	onsemi	30	13	9.3 @ 13A, 10V	3 @ 250µA	96 @ 10V	±25	3845 @ 15V	2.5	8-SOIC	Active
IRF7416TRPBF	Infineon	30	10	20 @ 5.6A, 10V	1 @ 250µA	92 @ 10V	±20	1700 @ 25V	2.5	8-SO	Active
IRF7424TRPBF	Infineon	30	11	13.5 @ 11A, 10V	2.5 @ 250µA	110 @ 10V	±20	4030 @ 25V	2.5	8-SO	Active
TSM180P03CS RLG	Taiwan Semiconductor	30	10	18 @ 8A, 10V	2.5 @ 250µA	23 @ 4.5V	±20	1730 @ 15V	2.5	8-SOP	Active
SI4425BDY-T1-GE3	Vishay Siliconix	30	8.8	12 @ 11.4A, 10V	3 @ 250µA	100 @ 10V	±20	Not specified	1.5	8-SOIC	Active
RSS090P03TB	Rohm Semiconductor	30	9	14 @ 9A, 10V	2.5 @ 1mA	39 @ 5V	±20	4000 @ 10V	2	8-SOP	Active
RRH090P03GZETB	Rohm Semiconductor	30	9	15.4 @ 9A, 10V	2.5 @ 1mA	56 @ 10V	±20	3000 @ 10V	0.65	8-SOP	Not For New Designs
RRH100P03GZETB	Rohm Semiconductor	30	10	12.6 @ 10A, 10V	2.5 @ 1mA	68 @ 10V	±20	3600 @ 10V	0.65	8-SOP	Not For New Designs

Engineering Selection Recommendations

Tier 1 - Direct Replacement (Recommended for Obsolete Part Replacement):

FDS6675BZ (onsemi) is the primary direct replacement. This part maintains identical voltage and current ratings, operates within the same temperature range, and carries active product status. The FDS6675BZ exhibits improved Rds On performance (13 mOhm versus 14 mOhm) and extended gate voltage rating (±25V versus ±20V), providing enhanced electrical characteristics. Both parts are ROHS3 compliant with MSL Level 1 rating and identical 8-SOIC packaging. Inventory availability is confirmed at 50,100 pieces.

FDS6679AZ (onsemi) provides an upgraded alternative with 13A continuous drain current capability, lower Rds On (9.3 mOhm), and extended gate voltage rating (±25V). This part is suitable for applications requiring higher current capacity or improved thermal performance. ROHS3 compliance and MSL Level 1 rating are maintained. Inventory availability is confirmed at 50,200 pieces.

Tier 2 - Cross-Manufacturer Substitutes (Active Product Status):

IRF7424TRPBF (Infineon HEXFET® series) matches the FDS6675 in voltage rating (30V) and current rating (11A) with comparable Rds On performance (13.5 mOhm). The 8-SO package is mechanically compatible with 8-SOIC footprints. This part is ROHS3 compliant with MSL Level 1 rating and active product status. Inventory availability is confirmed at 60,100 pieces.

IRF7416TRPBF (Infineon HEXFET® series) provides a 30V, 10A alternative with lower gate threshold voltage (1V) and reduced input capacitance (1700 pF). This part is suitable for applications where lower gate drive requirements are beneficial. ROHS3 compliance and MSL Level 1 rating are maintained. Inventory availability is confirmed at 36,288 pieces.

Tier 3 - Similar Alternatives (Thermal and Power Dissipation Constraints):

TSM180P03CS RLG (Taiwan Semiconductor Corporation) operates at 30V with 10A continuous drain current and 2.5W power dissipation. This part carries active product status but features MSL Level 3 (168 Hours) moisture sensitivity, requiring controlled storage conditions. The 8-SOP package is mechanically compatible. Inventory availability is confirmed at 3,667 pieces.

SI4425BDY-T1-GE3 (Vishay Siliconix TrenchFET® series) is rated for 30V with 8.8A continuous drain current and 1.5W power dissipation. This part exhibits reduced current capacity and thermal performance compared to the FDS6675. ROHS3 compliance and MSL Level 1 rating are maintained. Inventory availability is confirmed at 80,199 pieces.

RSS090P03TB (Rohm Semiconductor) operates at 30V with 9A continuous drain current and 2W power dissipation. This part carries active product status with MSL Level 1 rating. The 8-SOP package is mechanically compatible. Inventory availability is confirmed at 120,200 pieces.

Not Recommended for New Designs:

RRH090P03GZETB and RRH100P03GZETB (Rohm Semiconductor) carry "Not For New Designs" product status and exhibit reduced power dissipation (650 mW), limiting their suitability for applications requiring sustained thermal performance. These parts are not recommended for new circuit implementations.

Frequently Asked Questions (FAQ)

Q: Can FDS6675BZ be used as a direct replacement for FDS6675?

A: Yes. FDS6675BZ is the direct active equivalent manufactured by onsemi. Both parts share identical voltage (30V), current (11A), and power dissipation (2.5W) ratings, operate across the same temperature range (-55°C to 150°C), and use the same 8-SOIC package. FDS6675BZ exhibits improved electrical performance with lower Rds On (13 mOhm versus 14 mOhm) and extended gate voltage rating (±25V). Both parts are ROHS3 compliant with MSL Level 1 rating.

Q: What is the difference between FDS6679AZ and FDS6675?

A: FDS6679AZ provides higher current capacity (13A versus 11A) and improved Rds On performance (9.3 mOhm versus 14 mOhm). Both parts maintain 30V voltage rating, 2.5W power dissipation, and identical temperature range. FDS6679AZ is suitable for applications requiring higher current handling or reduced on-resistance losses. Both parts are onsemi PowerTrench® series with ROHS3 compliance and MSL Level 1 rating.

Q: Are Infineon IRF7424TRPBF and IRF7416TRPBF compatible with FDS6675 in terms of package?

A: Yes. Both Infineon parts use 8-SO packaging, which is mechanically compatible with the 8-SOIC footprint of FDS6675. The 0.154" (3.90mm) width specification is maintained across all three packages. Pin configuration and electrical interface are compatible for direct PCB substitution.

Q: What are the key differences between the onsemi and Infineon substitute options?

A: onsemi FDS6675BZ and FDS6679AZ are manufactured in the PowerTrench® series with gate charge specifications at 5V and 10V respectively. Infineon IRF7424TRPBF and IRF7416TRPBF are HEXFET® series devices with gate charge specifications at 10V. Infineon parts exhibit lower gate threshold voltage (1V to 2.5V versus 3V) and different input capacitance characteristics. Both manufacturers' parts are ROHS3 compliant with MSL Level 1 rating and active product status.

Q: Why are Rohm Semiconductor RRH090P03GZETB and RRH100P03GZETB not recommended?

A: These parts carry "Not For New Designs" product status and exhibit significantly reduced power dissipation (650 mW versus 2.5W for FDS6675). The lower thermal performance limits their suitability for applications requiring sustained power handling. These parts are not recommended for new circuit implementations.

Q: What is the significance of MSL Level 1 versus MSL Level 3 rating?

A: MSL Level 1 (Unlimited) indicates the component has unlimited shelf life under standard storage conditions without moisture absorption concerns. MSL Level 3 (168 Hours) requires controlled storage conditions and limits the component to 168 hours of exposure to 85% relative humidity and 85°C temperature before reflow soldering. TSM180P03CS RLG carries MSL Level 3 rating, requiring more stringent inventory management compared to MSL Level 1 parts.

Q: Can TSM180P03CS RLG be used in applications requiring 11A continuous current?

A: No. TSM180P03CS RLG is rated for 10A continuous drain current, which is below the 11A requirement of FDS6675. This part is suitable only for applications with 10A or lower current requirements. For 11A applications, FDS6675BZ, FDS6679AZ, or IRF7424TRPBF are required.

Q: What is the impact of different Rds On specifications on circuit performance?

A: Rds On (on-resistance) directly affects power dissipation and heat generation. Lower Rds On values reduce conduction losses. FDS6679AZ (9.3 mOhm) dissipates less heat than FDS6675 (14 mOhm) at identical current levels. IRF7424TRPBF (13.5 mOhm) provides comparable performance to FDS6675. For thermal-sensitive applications, lower Rds On values are preferred to reduce junction temperature rise.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed carry ROHS3 compliance certification. FDS6675 is also ROHS3 compliant. All parts meet the Restriction of Hazardous Substances Directive requirements for lead-free manufacturing and restricted substance elimination.

Q: What packaging options are available for FDS6675 substitutes?

A: Substitute parts are available in three compatible package types: 8-SOIC (FDS6675BZ, FDS6679AZ, SI4425BDY-T1-GE3), 8-SO (IRF7424TRPBF, IRF7416TRPBF), and 8-SOP (TSM180P03CS RLG, RSS090P03TB, RRH090P03GZETB, RRH100P03GZETB). All packages maintain the 0.154" (3.90mm) width specification and are mechanically compatible with FDS6675 PCB footprints.

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