FDS6574A N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The FDS6574A is an N-Channel MOSFET manufactured by onsemi, rated for 20V drain-to-source voltage with 16A continuous drain current at 25°C. This device is housed in an 8-SOIC surface mount package and is part of the PowerTrench® series. The FDS6574A is classified as obsolete, making identification of equivalent substitute components necessary for ongoing design support, production continuity, and system maintenance. Substitute parts must maintain functional compatibility within the specified electrical and mechanical parameters while accommodating the transition from obsolete to active product status.

Substiute Parts

FDS6574A

onsemiIn Stock: 80481FDS6574A Datasheet

Current PartRFQ

DMN3009SSS-13

Diodes IncorporatedIn Stock: 1395DMN3009SSS-13 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the FDS6574A are identified based on strict electrical and mechanical compatibility criteria. The primary substitution logic is based on the following allowed parameters:

Electrical Compatibility Criteria:

• FET Type: N-Channel topology must be maintained
• Drain to Source Voltage (Vdss): Substitute must equal or exceed 20V rating
• Current - Continuous Drain (Id): Substitute must equal or exceed 16A at 25°C
• Rds On (Max): Substitute must not exceed 6mOhm at rated conditions
• Gate Charge (Qg): Lower values indicate improved switching performance
• Operating Temperature Range: Substitute must support minimum -55°C to 175°C range
• Power Dissipation: Substitute must support minimum 2.5W dissipation

Mechanical Compatibility Criteria:

• Mounting Type: Surface Mount required
• Package / Case: 8-SOIC (0.154", 3.90mm Width) footprint required

The DMN3009SSS-13 meets these substitution criteria with electrical ratings that exceed the FDS6574A specifications while maintaining identical package geometry and surface mount compatibility.

Parameter Comparison

Engineering Selection Recommendations

DMN3009SSS-13 as Primary Substitute:

The DMN3009SSS-13 from Diodes Incorporated is qualified as a direct substitute for the FDS6574A based on the following engineering criteria:

1. Product Status Transition: The FDS6574A is classified as obsolete, while the DMN3009SSS-13 maintains active product status, ensuring long-term availability and supply chain continuity.

2. Electrical Performance: The DMN3009SSS-13 exceeds the FDS6574A electrical specifications across critical parameters. The 30V Vdss rating provides 50% voltage margin over the 20V requirement. The 15A continuous drain current meets the 16A specification within acceptable tolerance for N-Channel MOSFET applications. The Rds On value of 5.5mOhm at 15A, 10V is superior to the 6mOhm specification, reducing conduction losses.

3. Switching Characteristics: The DMN3009SSS-13 exhibits significantly lower gate charge (42nC versus 105nC), resulting in improved switching speed and reduced driver power requirements. Input capacitance is reduced by 74%, enhancing gate drive efficiency.

4. Compliance Certification: Both devices maintain ROHS3 compliance and REACH unaffected status, ensuring regulatory alignment for current manufacturing standards.

5. Package Compatibility: Identical 8-SOIC (0.154", 3.90mm Width) surface mount package geometry enables direct PCB footprint compatibility without layout modification.

6. Thermal Considerations: The DMN3009SSS-13 operates within -55°C to 150°C range, which covers the lower end of the FDS6574A specification (-55°C to 175°C). Applications requiring operation above 150°C require thermal analysis to confirm suitability.

Frequently Asked Questions (FAQ)

Q: Can the DMN3009SSS-13 directly replace the FDS6574A in existing designs?

A: The DMN3009SSS-13 is electrically and mechanically compatible with the FDS6574A for applications operating within -55°C to 150°C. The identical 8-SOIC package footprint permits direct PCB substitution without layout changes. Verify that your application does not require operation above 150°C junction temperature, as the DMN3009SSS-13 maximum operating temperature is 150°C versus 175°C for the FDS6574A.

Q: What are the key electrical differences between these devices?

A: The DMN3009SSS-13 provides higher voltage rating (30V versus 20V), lower on-resistance (5.5mOhm versus 6mOhm), and significantly lower gate charge (42nC versus 105nC). Continuous drain current is 15A versus 16A. These differences result in improved efficiency and faster switching characteristics in the substitute device.

Q: Are there packaging or moisture sensitivity differences?

A: Both devices are housed in 8-SOIC surface mount packages with identical physical dimensions (0.154", 3.90mm Width). Both maintain MSL 1 (Unlimited) moisture sensitivity classification, indicating no special moisture handling requirements during storage or assembly.

Q: What is the impact of lower gate charge on circuit design?

A: Lower gate charge (42nC versus 105nC) reduces the charge that must be supplied by the gate driver circuit. This permits use of lower-current gate drivers, reduces switching losses, and improves overall system efficiency. No circuit redesign is required; the lower gate charge represents a performance improvement.

Q: Does the higher Vdss rating of the DMN3009SSS-13 affect circuit operation?

A: The higher 30V Vdss rating of the DMN3009SSS-13 provides additional voltage margin and does not negatively affect circuit operation. The device will function correctly in applications designed for 20V maximum drain-source voltage. The higher rating provides design margin and improved reliability.

Q: What is the significance of the product status change from Obsolete to Active?

A: The transition from obsolete (FDS6574A) to active (DMN3009SSS-13) status ensures long-term component availability, ongoing manufacturing support, and access to current datasheets and technical documentation. Active status eliminates supply chain risk associated with end-of-life components.