FDS5690 Equivalent & Substitute Parts

Part Overview

The FDS5690 is an N-Channel 60V 7A MOSFET manufactured by onsemi in the PowerTrench® series, housed in an 8-SOIC surface mount package. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. The FDS5690 is suitable for applications requiring moderate voltage and current switching capabilities with a maximum power dissipation of 2.5W at ambient temperature.

Substiute Parts

FDS5690
onsemiIn Stock: 22759FDS5690 Datasheet
FDS5690
Current Part
FDS3572
onsemiIn Stock: 7268FDS3572 Datasheet
FDS3572
MFR Recommended
STS5NF60L
STMicroelectronicsIn Stock: 19370STS5NF60L Datasheet
STS5NF60L
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STS7NF60L
STMicroelectronicsIn Stock: 38806STS7NF60L Datasheet
STS7NF60L
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STS8N6LF6AG
STMicroelectronicsIn Stock: 3700STS8N6LF6AG Datasheet
STS8N6LF6AG
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TSM4436CS RLG
Taiwan Semiconductor CorporationIn Stock: 15276TSM4436CS RLG Datasheet
TSM4436CS RLG
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Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 60 V
Continuous Drain Current (Id) @ 25°C 7 A
Rds On (Max) @ 7A, 10V 28 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 4 V
Gate Charge (Qg) @ 10V 32 nC
Input Capacitance (Ciss) @ 30V 1107 pF
Power Dissipation (Max) 2.5 W
Operating Temperature Range -55 to 150 °C
Package Type 8-SOIC
Technology MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the FDS5690 is determined by the following critical parameters:

Voltage Rating (Vdss): All substitute parts must operate at or above 60V to ensure compatibility with the original circuit voltage specifications.

Current Rating (Id): Substitute parts must support continuous drain current at or above 7A to maintain equivalent current-handling capability.

Package Type: All substitutes must use the 8-SOIC surface mount package to ensure mechanical and electrical compatibility with existing PCB layouts.

Rds On (On-State Resistance): The on-state resistance must be comparable to ensure similar power dissipation and thermal characteristics in the application.

Gate Charge (Qg) and Input Capacitance (Ciss): These parameters affect switching speed and gate drive requirements; substitutes with similar values maintain equivalent circuit performance.

Operating Temperature Range: Substitutes must support the full operating temperature range of -55°C to 150°C (or higher) to ensure reliability across all environmental conditions.

RoHS and Compliance Status: All substitutes must maintain ROHS3 compliance and REACH unaffected status to meet regulatory requirements.

Parameter Comparison

Parameter FDS5690 (Main) FDS3572 STS5NF60L STS7NF60L STS8N6LF6AG TSM4436CS RLG
Manufacturer onsemi onsemi STMicroelectronics STMicroelectronics STMicroelectronics Taiwan Semiconductor
Vdss (V) 60 80 60 60 60 60
Id @ 25°C (A) 7 8.9 5 7.5 8 8
Rds On (mOhm) 28 @ 7A, 10V 16 @ 8.9A, 10V 55 @ 2.5A, 10V 19.5 @ 3.5A, 10V 24 @ 4A, 10V 36 @ 4.6A, 10V
Vgs(th) (V) 4 @ 250µA 4 @ 250µA 2.5 @ 250µA 1 @ 250µA 2.5 @ 250µA 3 @ 250µA
Gate Charge Qg (nC) 32 @ 10V 41 @ 10V 17 @ 5V 34 @ 4.5V 27 @ 10V 10.5 @ 4.5V
Ciss (pF) 1107 @ 30V 1990 @ 25V 1250 @ 25V 1700 @ 25V 1340 @ 25V 1100 @ 30V
Power Dissipation (W) 2.5 2.5 2.5 2.5 3.2 2.5
Operating Temp Range (°C) -55 to 150 -55 to 150 to 150 to 150 -55 to 175 -55 to 150
Package 8-SOIC 8-SOIC 8-SOIC 8-SOIC 8-SOIC 8-SOP
Product Status Obsolete Active Active Active Active Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitute: FDS3572

The FDS3572 is the manufacturer-recommended substitute from onsemi. It maintains the same 8-SOIC package footprint and operating temperature range as the FDS5690. The FDS3572 offers higher voltage rating (80V versus 60V) and improved current handling (8.9A versus 7A), with superior on-state resistance (16mOhm versus 28mOhm). The device is in active production status, ensuring long-term availability. ROHS3 compliance and identical MSL rating (1 - Unlimited) confirm regulatory and environmental compatibility.

Alternative Substitute: STS7NF60L

The STS7NF60L from STMicroelectronics (STripFET™ II series) provides equivalent voltage and current ratings (60V, 7.5A) with improved on-state resistance (19.5mOhm) and lower gate threshold voltage (1V). This device is in active production and maintains 8-SOIC package compatibility. Operating temperature range extends to 150°C, matching the FDS5690 specification. ROHS3 compliance is confirmed.

Alternative Substitute: STS8N6LF6AG

The STS8N6LF6AG from STMicroelectronics (STripFET™ F6 series) is an automotive-grade device with AEC-Q101 qualification. It provides 60V voltage rating and 8A continuous drain current with 24mOhm on-state resistance. The device supports an extended operating temperature range (-55°C to 175°C), exceeding the FDS5690 specification. Higher power dissipation rating (3.2W) provides additional thermal margin. 8-SOIC package compatibility is maintained. ROHS3 compliance is confirmed.

Alternative Substitute: STS5NF60L

The STS5NF60L from STMicroelectronics (STripFET™ series) maintains 60V voltage rating with 5A continuous drain current. This device is suitable for applications where current requirements are lower than the original 7A specification. On-state resistance is higher (55mOhm) due to lower current rating. 8-SOIC package compatibility is maintained. ROHS3 compliance is confirmed. This substitute is appropriate only when circuit current demands do not exceed 5A.

Package Consideration: TSM4436CS RLG

The TSM4436CS RLG from Taiwan Semiconductor Corporation provides 60V, 8A specifications with 8-SOP package. While electrical parameters are compatible, the package designation differs from the standard 8-SOIC. Physical dimensions remain equivalent (0.154", 3.90mm width), but PCB layout verification is required before substitution. MSL rating is 3 (168 Hours), which differs from the FDS5690 MSL rating of 1. ROHS3 compliance is confirmed.

Frequently Asked Questions (FAQ)

Q: Can the FDS3572 be used as a direct replacement for the FDS5690?

A: Yes. The FDS3572 is the manufacturer-recommended substitute from onsemi. Both devices use the 8-SOIC package, share identical operating temperature ranges (-55°C to 150°C), and maintain ROHS3 compliance. The FDS3572 provides higher voltage and current ratings with improved on-state resistance, making it a superior replacement in all respects.

Q: What is the difference between the STS7NF60L and STS5NF60L?

A: The STS7NF60L provides 7.5A continuous drain current compared to 5A for the STS5NF60L. The STS7NF60L has lower on-state resistance (19.5mOhm versus 55mOhm) and higher gate charge (34nC versus 17nC). The STS7NF60L is the more appropriate substitute when the application requires current handling closer to the original 7A specification.

Q: Is the STS8N6LF6AG suitable for automotive applications?

A: Yes. The STS8N6LF6AG carries AEC-Q101 automotive qualification and is rated for extended temperature operation (-55°C to 175°C). This device is appropriate for automotive and industrial applications requiring higher reliability standards.

Q: Can the TSM4436CS RLG be used as a substitute despite the different package designation?

A: The TSM4436CS RLG uses an 8-SOP package instead of 8-SOIC. While physical dimensions are equivalent (0.154", 3.90mm width), PCB layout and footprint compatibility must be verified before substitution. Additionally, the MSL rating differs (3 versus 1), which may affect moisture sensitivity handling requirements.

Q: What are the key parameters that determine substitution compatibility?

A: Substitution compatibility is determined by: (1) Drain-Source Voltage (Vdss) at or above 60V, (2) Continuous Drain Current (Id) at or above 7A, (3) 8-SOIC package type, (4) On-state resistance (Rds On) comparable to 28mOhm, (5) Operating temperature range supporting -55°C to 150°C, and (6) ROHS3 compliance status.

Q: Why does the FDS3572 have higher gate charge than the FDS5690?

A: The FDS3572 provides higher current rating (8.9A versus 7A) and improved on-state resistance (16mOhm versus 28mOhm). Higher gate charge (41nC versus 32nC) is a characteristic of the improved device design. Gate drive circuits must be verified to ensure adequate drive capability, though the difference is within typical design margins.

Q: Are all substitute parts in active production?

A: Yes. All substitute parts listed (FDS3572, STS5NF60L, STS7NF60L, STS8N6LF6AG, and TSM4436CS RLG) are in active production status. The original FDS5690 is classified as obsolete, making these active alternatives necessary for design continuity.

Q: What is the significance of the MSL rating difference in the TSM4436CS RLG?

A: The TSM4436CS RLG has MSL rating 3 (168 Hours), compared to MSL rating 1 (Unlimited) for the FDS5690. MSL rating 3 requires moisture bake-out procedures before soldering if the device has been exposed to ambient humidity for extended periods. This affects component handling and storage protocols but does not impact electrical performance.

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