FDS5682 N-Channel MOSFET 60V 7.5A Equivalent & Substitute Parts

Part Overview

The FDS5682 is an N-Channel MOSFET manufactured by onsemi, rated for 60V drain-to-source voltage with 7.5A continuous drain current in a surface mount 8-SOIC package. This device is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support and component procurement.

The FDS5682 operates within the PowerTrench® series and is suitable for applications requiring moderate voltage and current switching capabilities in compact surface mount form factors. Due to its obsolete status, alternative parts with compatible electrical and mechanical specifications are required for new procurement and design continuity.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	7.5	A
On-Resistance (Rds On) @ 7.5A, 10V	21	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	2	V
Gate Charge (Qg) @ 10V	35	nC
Power Dissipation (Max)	2.5	W
Operating Temperature Range	-55 to 150	°C
Package Type	8-SOIC	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the FDS5682 is determined by strict alignment of electrical and mechanical parameters across the following criteria:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal 60V
Continuous Drain Current (Id): Must equal or exceed 7.5A
Package Type: Must be 8-SOIC or mechanically equivalent
Mounting Type: Must be Surface Mount
FET Type: Must be N-Channel MOSFET

Secondary Compatibility Parameters:

On-Resistance (Rds On): Lower or equivalent values indicate improved performance
Gate Charge (Qg): Lower values reduce switching losses
Power Dissipation: Must support 2.5W or greater
Operating Temperature: Must support -55°C to 150°C range or equivalent maximum

The substitute parts listed below meet the primary substitution criteria and maintain functional compatibility within the specified electrical and thermal operating envelope.

Parameter Comparison

Parameter	FDS5682 (onsemi)	RSH065N06GZETB (Rohm)	STS7NF60L (STMicroelectronics)	Unit
Drain-to-Source Voltage (Vdss)	60	60	60	V
Continuous Drain Current (Id) @ 25°C	7.5	6.5	7.5	A
On-Resistance (Rds On) @ 10V	21	37	19.5	mOhm
Gate Threshold Voltage (Vgs(th))	2	2.5	1	V
Gate Charge (Qg)	35	16	34	nC
Power Dissipation (Max)	2.5	2	2.5	W
Operating Temperature (Max)	150	150	150	°C
Package Type	8-SOIC	8-SOP	8-SOIC	—
Product Status	Obsolete	Not For New Designs	Active	—

Engineering Selection Recommendations

STS7NF60L (STMicroelectronics) - Primary Substitute

The STS7NF60L is the preferred substitute for the FDS5682. This device maintains identical drain-to-source voltage (60V) and continuous drain current (7.5A) specifications. The STS7NF60L features superior on-resistance (19.5 mOhm versus 21 mOhm), lower gate threshold voltage (1V versus 2V), and equivalent power dissipation (2.5W). The device is classified as Active, ensuring long-term availability and supply chain continuity. The STS7NF60L is RoHS3 compliant and housed in the same 8-SOIC package, enabling direct mechanical and electrical substitution. STripFET™ II series technology provides enhanced performance characteristics suitable for modern switching applications.

RSH065N06GZETB (Rohm Semiconductor) - Secondary Substitute

The RSH065N06GZETB serves as a secondary substitute option when the STS7NF60L is unavailable. This device maintains the 60V drain-to-source voltage specification but operates at a reduced continuous drain current of 6.5A, representing a 13% reduction from the FDS5682 specification. The on-resistance is higher at 37 mOhm, and power dissipation is reduced to 2W. The RSH065N06GZETB is classified as Not For New Designs, indicating limited future availability. The device is housed in an 8-SOP package, which differs mechanically from the FDS5682 8-SOIC package, requiring PCB layout verification. RoHS3 compliance is confirmed. This substitute is suitable only for applications where the reduced current rating and increased on-resistance do not compromise system performance.

Compliance and Certification Status

Both substitute parts maintain REACH Unaffected status and EAR99 export classification, consistent with the FDS5682. Moisture Sensitivity Level (MSL) is rated as 1 (Unlimited) for all three devices, indicating no special moisture handling requirements during storage or assembly.

Frequently Asked Questions (FAQ)

Q: Can the STS7NF60L directly replace the FDS5682 without PCB modifications?

A: Yes. The STS7NF60L is housed in the same 8-SOIC package with identical pin configuration and mechanical dimensions (0.154", 3.90mm width). No PCB layout changes are required for direct substitution.

Q: What is the impact of using the RSH065N06GZETB as a substitute?

A: The RSH065N06GZETB operates at 6.5A continuous drain current versus the FDS5682 specification of 7.5A. This represents a 13% reduction in current capacity. Additionally, on-resistance increases from 21 mOhm to 37 mOhm, resulting in higher power dissipation per unit current. The device is housed in an 8-SOP package, which differs mechanically from the 8-SOIC package. PCB layout verification is required before implementation.

Q: Why is the FDS5682 classified as obsolete?

A: The FDS5682 is no longer manufactured by onsemi and has been removed from active production. Substitute parts with equivalent or superior electrical characteristics are available from alternative manufacturers to support ongoing design requirements.

Q: Are there any thermal performance differences between the FDS5682 and STS7NF60L?

A: Both devices are rated for maximum power dissipation of 2.5W and maximum operating temperature of 150°C. The STS7NF60L features lower on-resistance (19.5 mOhm versus 21 mOhm), which reduces resistive heating in switching applications. Thermal performance depends on PCB layout, copper area, and thermal management design.

Q: What is the significance of the gate charge (Qg) parameter in substitution?

A: Gate charge determines the energy required to switch the MOSFET on and off. The STS7NF60L (34 nC) and FDS5682 (35 nC) have nearly identical gate charge specifications, ensuring equivalent switching speed and driver circuit compatibility. The RSH065N06GZETB (16 nC) has significantly lower gate charge, which may reduce switching losses but requires verification of driver circuit compatibility.

Q: Can the FDS5682 be used interchangeably with the RSH065N06GZETB in all applications?

A: No. The RSH065N06GZETB is rated for 6.5A continuous drain current, which is 13% lower than the FDS5682 specification of 7.5A. Applications requiring the full 7.5A rating must use the STS7NF60L or equivalent devices rated for 7.5A or higher. The RSH065N06GZETB is suitable only for applications with reduced current requirements.

Q: What is the difference between 8-SOIC and 8-SOP packages?

A: Both are surface mount packages with eight pins, but they differ in physical dimensions and pin spacing. The 8-SOIC package (used by FDS5682 and STS7NF60L) and 8-SOP package (used by RSH065N06GZETB) have different footprints. PCB layout must be verified before substituting the RSH065N06GZETB, as the package footprint may not be compatible with existing designs.

Q: Is the STS7NF60L suitable for new designs?

A: Yes. The STS7NF60L is classified as Active, indicating ongoing manufacturing and long-term availability. This device is recommended for new designs requiring 60V, 7.5A N-Channel MOSFET functionality in 8-SOIC surface mount packaging.

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