FDS4935 MOSFET Equivalent & Substitute Parts

Part Overview

The FDS4935 is a dual P-Channel MOSFET manufactured by onsemi, designed for surface mount applications in the 8-SOIC package. This device features a 30V drain-to-source voltage rating with 7A continuous drain current capability and operates across an extended temperature range of -55°C to 175°C. The FDS4935 is classified as obsolete, making equivalent substitute parts necessary for new designs and ongoing production requirements. Substitute parts must maintain compatibility with the 8-SOIC package footprint and preserve the core electrical characteristics required for P-Channel switching applications.

Substiute Parts

FDS4935

onsemiIn Stock: 10469FDS4935 Datasheet

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FDS4935BZ

onsemiIn Stock: 27253FDS4935BZ Datasheet

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DMP3036SSD-13

Diodes IncorporatedIn Stock: 1434DMP3036SSD-13 Datasheet

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IRF7328TRPBF

Infineon TechnologiesIn Stock: 16837IRF7328TRPBF Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the FDS4935 are selected based on strict electrical and mechanical compatibility criteria. All substitute devices must meet the following requirements:

Core Compatibility Parameters:

• Configuration: 2 P-Channel (Dual) MOSFET
• Drain to Source Voltage (Vdss): 30V minimum
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Mounting Type: Surface Mount
• Technology: MOSFET (Metal Oxide)
• FET Feature: Logic Level Gate

Performance Parameters:

• Current - Continuous Drain (Id) @ 25°C: 6.9A or greater
• Rds On (Max) @ Id, Vgs: 23mOhm or lower
• Vgs(th) (Max) @ Id: 3V or lower
• Operating Temperature Range: Minimum -55°C to 150°C

Substitute parts may vary in gate charge, input capacitance, and maximum power dissipation within acceptable ranges for the application. The FDS4935BZ is a direct onsemi replacement with active product status. The DMP3036SSD-13 and IRF7328TRPBF provide enhanced current handling and reduced on-resistance characteristics while maintaining package and voltage compatibility.

Parameter Comparison

Engineering Selection Recommendations

FDS4935BZ (onsemi)

The FDS4935BZ is the direct successor to the FDS4935, manufactured by onsemi within the same PowerTrench® series. This part maintains identical package geometry and core electrical specifications with a continuous drain current of 6.9A, which satisfies applications requiring up to 7A operation. The FDS4935BZ carries active product status and ROHS3 compliance, ensuring long-term availability and regulatory conformance. The reduced maximum power rating (900mW versus 2W) reflects improved thermal efficiency. This part is the preferred choice for direct replacement in existing designs.

DMP3036SSD-13 (Diodes Incorporated)

The DMP3036SSD-13 provides enhanced performance characteristics with an 18.0A continuous drain current rating and reduced on-resistance of 20mOhm. This device is suitable for applications requiring higher current capacity or lower power dissipation than the original FDS4935. The DMP3036SSD-13 maintains 30V Vdss rating, logic level gate operation, and 8-SOIC package compatibility. Active product status and ROHS3 compliance are confirmed. The increased input capacitance (1931pF) and lower gate charge (16.5nC) may affect switching characteristics in high-frequency applications.

IRF7328TRPBF (Infineon Technologies)

The IRF7328TRPBF is an 8A-rated dual P-Channel MOSFET from the HEXFET® series, offering performance between the FDS4935 and DMP3036SSD-13. This device features a 21mOhm on-resistance and lower gate threshold voltage (2.5V), providing improved switching performance. The IRF7328TRPBF maintains 30V Vdss rating and 8-SOIC package compatibility with active product status and ROHS3 compliance. The significantly higher gate charge (78nC) and input capacitance (2675pF) require evaluation for switching speed requirements in the target application.

All three substitute parts are available in active production status with ROHS3 compliance and REACH unaffected designation, ensuring regulatory compliance and supply chain continuity.

Frequently Asked Questions (FAQ)

Q: Can the FDS4935BZ be used as a direct replacement for the FDS4935?

A: Yes. The FDS4935BZ is manufactured by onsemi as the active production equivalent of the obsolete FDS4935. Both devices share identical package geometry (8-SOIC), voltage rating (30V Vdss), configuration (dual P-Channel), and core electrical characteristics. The FDS4935BZ is rated for 6.9A continuous drain current, which covers applications designed for the original 7A specification. The primary difference is active product status and improved thermal efficiency (900mW maximum power versus 2W).

Q: What are the key differences between the DMP3036SSD-13 and the FDS4935?

A: The DMP3036SSD-13 provides significantly higher current capacity (18.0A versus 7A) and lower on-resistance (20mOhm versus 23mOhm). Both devices maintain 30V Vdss rating, dual P-Channel configuration, and 8-SOIC package compatibility. The DMP3036SSD-13 exhibits higher input capacitance (1931pF versus 1233pF) and lower gate charge (16.5nC versus 21nC), which may affect switching speed. This device is suitable for applications requiring enhanced current handling or reduced power dissipation.

Q: Is the IRF7328TRPBF compatible with the FDS4935 footprint?

A: Yes. The IRF7328TRPBF uses the 8-SOIC package with identical 0.154" (3.90mm) width, ensuring PCB footprint compatibility with the FDS4935. Both devices are surface mount components with matching pin configurations for dual P-Channel MOSFET arrays. Electrical compatibility is confirmed through matching 30V Vdss rating, logic level gate operation, and dual P-Channel configuration.

Q: Why does the FDS4935BZ have a lower maximum power rating than the FDS4935?

A: The FDS4935BZ maximum power rating of 900mW reflects improved thermal efficiency and more conservative thermal design margins compared to the original 2W specification. This does not indicate reduced performance; rather, it represents a more accurate thermal characterization. The 6.9A continuous drain current rating remains sufficient for applications designed around the original 7A specification.

Q: Which substitute part should be selected for high-frequency switching applications?

A: The DMP3036SSD-13 is the preferred choice for high-frequency applications due to its lower gate charge (16.5nC) and reduced on-resistance (20mOhm), which minimize switching losses and enable faster switching transitions. The FDS4935BZ offers moderate gate charge (40nC) suitable for standard switching frequencies. The IRF7328TRPBF exhibits significantly higher gate charge (78nC), which may limit switching speed in high-frequency designs.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. The FDS4935BZ, DMP3036SSD-13, and IRF7328TRPBF are all ROHS3 compliant. The original FDS4935 does not specify RoHS status due to its obsolete classification. All active substitute parts carry confirmed ROHS3 compliance and REACH unaffected designation, ensuring regulatory conformance for new designs and production.

Q: Can the DMP3036SSD-13 be used in applications designed for 7A operation?

A: Yes. The DMP3036SSD-13 is rated for 18.0A continuous drain current, which exceeds the 7A requirement of the original FDS4935. The device maintains identical 30V Vdss rating, dual P-Channel configuration, and 8-SOIC package compatibility. The lower on-resistance (20mOhm) provides improved efficiency. No circuit modifications are required for direct substitution in applications designed for the FDS4935.

Q: What is the operating temperature range difference between the FDS4935 and its substitutes?

A: The FDS4935 operates from -55°C to 175°C (TJ). The FDS4935BZ, DMP3036SSD-13, and IRF7328TRPBF operate from -55°C to 150°C (TJ). Applications requiring operation above 150°C must retain the original FDS4935 or identify alternative devices with extended temperature ratings. For standard industrial and commercial applications operating below 150°C, all substitute parts provide equivalent thermal performance.