FDS4897C Equivalent & Substitute Parts

Part Overview

The FDS4897C is an N and P-Channel MOSFET array manufactured by onsemi, designed for surface mount applications in 8-SOIC packaging. This complementary dual MOSFET device operates at 40V drain-to-source voltage with continuous drain currents of 6.2A (N-channel) and 4.4A (P-channel), delivering 900mW maximum power dissipation. The device features logic level gate operation and is compliant with RoHS3 and REACH standards.

The FDS4897C carries a Last Time Buy product status, indicating discontinued production. Identifying equivalent and substitute parts is necessary to support ongoing design requirements and ensure supply chain continuity for applications currently utilizing this component.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	40	V
Continuous Drain Current (Id) @ 25°C	6.2A (N-ch), 4.4A (P-ch)	A
On-Resistance (Rds On) @ Id, Vgs	29mOhm @ 6.2A, 10V	mOhm
Gate Threshold Voltage (Vgs(th)) @ Id	3V @ 250µA	V
Gate Charge (Qg) @ Vgs	20nC @ 10V	nC
Input Capacitance (Ciss) @ Vds	760pF @ 20V	pF
Maximum Power Dissipation	900	mW
Operating Temperature Range	-55 to 150	°C
Package Type	8-SOIC	—
Configuration	N and P-Channel	—
FET Feature	Logic Level Gate	—

Substitute Part Grouping Explanation

Substitution eligibility for the FDS4897C is determined by the following critical parameters:

Mandatory Matching Criteria:

Drain to Source Voltage (Vdss): 40V
Configuration: N and P-Channel complementary pair
Package: 8-SOIC surface mount
Operating Temperature Range: -55°C to 150°C minimum

Performance Compatibility Criteria:

Continuous Drain Current (Id): Equal to or greater than 6.2A (N-channel) and 4.4A (P-channel)
On-Resistance (Rds On): Equal to or lower than 29mOhm at rated conditions
Gate Threshold Voltage (Vgs(th)): Within 3V specification at 250µA
Maximum Power Dissipation: Equal to or greater than 900mW

Compliance Requirements:

RoHS3 Compliant
REACH Unaffected status
Moisture Sensitivity Level (MSL): 1 (Unlimited)

The substitute parts listed below meet all mandatory matching criteria and maintain electrical performance within acceptable operating parameters for direct replacement applications.

Parameter Comparison

Parameter	FDS4897C (onsemi)	AO4614B (Alpha & Omega)	DMC4029SSD-13 (Diodes)	DMC4050SSD-13 (Diodes)	TPC8408,LQ(S (Toshiba)
Manufacturer	onsemi	Alpha & Omega Semiconductor Inc.	Diodes Incorporated	Diodes Incorporated	Toshiba Semiconductor and Storage
Vdss (V)	40	40	40	40	40
Id @ 25°C (A)	6.2, 4.4	6, 5	9 (Ta), 6.5 (Ta)	5.3	6.1, 5.3
Rds On (mOhm)	29 @ 6.2A, 10V	30 @ 6A, 10V	24 @ 6A, 10V; 45 @ 5A, 10V	45 @ 3A, 10V	32 @ 3.1A, 10V
Vgs(th) @ 250µA (V)	3	3	3	1.8	2.3
Qg @ 10V (nC)	20	10.8	8.8, 10.6	37.56	24
Ciss @ 20V (pF)	760	650	1060, 1154	1790.8	850
Power Max (mW)	900	2000	1800	1800	450
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	to 150
Package	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC
Configuration	N and P-Channel	N and P-Channel	N and P-Channel Complementary	N and P-Channel	N and P-Channel
FET Feature	Logic Level Gate	Logic Level Gate	—	Logic Level Gate	Logic Level Gate
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	RoHS Compliant
Product Status	Last Time Buy	Active	Active	Active	Active

Engineering Selection Recommendations

AO4614B (Alpha & Omega Semiconductor Inc.)

The AO4614B is an active production device offering electrical performance closely aligned with the FDS4897C. Drain current specifications (6A N-channel, 5A P-channel) meet or exceed the original part requirements. On-resistance of 30mOhm at 6A, 10V is marginally higher than the FDS4897C but remains within acceptable tolerance for most applications. Maximum power dissipation of 2W provides enhanced thermal headroom. RoHS3 compliance and unlimited MSL rating ensure regulatory and environmental compatibility. This device is recommended for applications requiring direct functional replacement with minimal design modification.

DMC4029SSD-13 (Diodes Incorporated)

The DMC4029SSD-13 is an automotive-qualified device (AEC-Q101) in active production. Drain current specifications (9A N-channel, 6.5A P-channel) exceed FDS4897C ratings, providing performance margin. On-resistance values (24mOhm at 6A, 10V and 45mOhm at 5A, 10V) demonstrate superior N-channel performance. Maximum power dissipation of 1.8W supports higher thermal loads. Automotive qualification adds value for applications requiring AEC-Q101 certification. This device is suitable for designs where enhanced current handling and automotive-grade reliability are beneficial.

DMC4050SSD-13 (Diodes Incorporated)

The DMC4050SSD-13 is an active production device with drain current of 5.3A, which falls below the FDS4897C N-channel specification of 6.2A. On-resistance of 45mOhm at 3A, 10V is significantly higher than the original part. Gate threshold voltage of 1.8V differs from the 3V specification. Maximum power dissipation of 1.8W exceeds the original device. This device exhibits reduced electrical performance relative to the FDS4897C and is not recommended as a primary substitute.

TPC8408,LQ(S (Toshiba Semiconductor and Storage)

The TPC8408,LQ(S is an active production device with drain current specifications (6.1A N-channel, 5.3A P-channel) meeting FDS4897C requirements. On-resistance of 32mOhm at 3.1A, 10V is comparable to the original part. Gate threshold voltage of 2.3V at 100µA differs from the 3V specification at 250µA. Maximum power dissipation of 450mW is significantly lower than the FDS4897C, limiting thermal capability. RoHS compliance is confirmed. This device is suitable for applications with lower power dissipation requirements but not recommended where thermal performance is critical.

Frequently Asked Questions (FAQ)

Q: Can the AO4614B directly replace the FDS4897C without PCB modifications?

A: Yes. The AO4614B shares identical 8-SOIC packaging, pinout configuration, and operating voltage specifications with the FDS4897C. Electrical performance parameters are compatible within standard design tolerances. No PCB layout changes are required for direct substitution.

Q: What is the primary difference between the DMC4029SSD-13 and other substitutes?

A: The DMC4029SSD-13 is the only substitute carrying automotive qualification (AEC-Q101). This certification is required for applications in automotive systems. Additionally, it provides the highest drain current ratings (9A N-channel, 6.5A P-channel) among all substitutes, offering the greatest performance margin above FDS4897C specifications.

Q: Why is the TPC8408,LQ(S listed as a substitute if its power rating is lower?

A: The TPC8408,LQ(S meets all mandatory substitution criteria: 40V Vdss, N and P-Channel configuration, 8-SOIC package, and operating temperature range. Drain current specifications (6.1A, 5.3A) exceed FDS4897C requirements. The lower power dissipation rating (450mW versus 900mW) indicates reduced thermal capability but does not prevent substitution in applications with moderate power requirements. Design verification is necessary to confirm thermal adequacy for specific applications.

Q: Are all substitute parts RoHS3 compliant?

A: The AO4614B, DMC4029SSD-13, and DMC4050SSD-13 are explicitly RoHS3 compliant. The TPC8408,LQ(S is RoHS compliant. All devices meet REACH Unaffected status and carry MSL 1 (Unlimited) moisture sensitivity ratings, ensuring regulatory and environmental compatibility with the original FDS4897C.

Q: What is the significance of gate threshold voltage differences among substitutes?

A: Gate threshold voltage (Vgs(th)) determines the gate-source voltage required to initiate channel conduction. The FDS4897C specifies 3V at 250µA. Substitutes with lower Vgs(th) values (DMC4050SSD-13 at 1.8V, TPC8408,LQ(S at 2.3V) require less gate drive voltage for activation. This difference affects gate driver circuit design and switching characteristics. Applications using logic-level gate drivers compatible with 3V thresholds may require verification when substituting devices with lower thresholds.

Q: Which substitute offers the best thermal performance?

A: The DMC4029SSD-13 and AO4614B both provide maximum power dissipation ratings of 1.8W and 2W respectively, compared to the FDS4897C at 900mW. These devices offer superior thermal headroom. The DMC4029SSD-13 additionally provides lower on-resistance values (24mOhm at 6A, 10V), reducing resistive heating during operation.

Q: Can substitutes be mixed within the same design?

A: All substitute parts are pin-compatible and functionally equivalent within the 8-SOIC package. However, mixing different manufacturers' devices in the same application introduces component variation in electrical characteristics. Consistent device selection from a single manufacturer is recommended to maintain uniform circuit performance and simplify supply chain management.

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