FDS4480 Equivalent & Substitute Parts

Part Overview

The FDS4480 is an N-Channel MOSFET manufactured by onsemi, rated for 40V drain-to-source voltage with 10.8A continuous drain current at 25°C. This device operates in the PowerTrench® series and is housed in an 8-SOIC surface mount package. The part is currently in active production status with RoHS3 compliance and unlimited moisture sensitivity level (MSL 1).

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining compatible package footprints and thermal characteristics. Alternative devices may be required due to inventory availability, manufacturing lead times, or application-specific performance optimization.

Key Parameters

Parameter	FDS4480 Value	Unit
Drain-to-Source Voltage (Vdss)	40	V
Continuous Drain Current (Id) @ 25°C	10.8	A (Ta)
On-Resistance (Rds On) @ 10.8A, 10V	12	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	5	V
Gate Charge (Qg) @ 10V	41	nC
Power Dissipation (Max)	2.5	W (Ta)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	8-SOIC	Surface Mount
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitute parts for the FDS4480 are classified based on the following electrical and mechanical criteria:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): 40V minimum rating
Continuous Drain Current (Id): Equal to or greater than 10.8A
On-Resistance (Rds On): 12mOhm or lower at rated current and gate voltage
Package Type: 8-SOIC or 8-SOP compatible footprint
FET Type: N-Channel MOSFET technology
Operating Temperature: Minimum -55°C to 150°C or higher

Substitution Categories:

Category A - Direct Electrical Equivalents (40V Rating): Parts maintaining the 40V Vdss rating with comparable or superior current handling and on-resistance characteristics. These devices operate within the same voltage class and provide direct functional replacement.

Category B - Higher Voltage Rated Alternatives (100V Rating): Parts rated for 100V Vdss provide enhanced voltage margin and are electrically compatible in 40V applications. These devices operate at reduced stress levels relative to their maximum ratings.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Package	Temp Range (°C)
FDS4480	onsemi	40	10.8	12	41	8-SOIC	-55 to 175
AO4480	UMW	40	14	12	22	8-SOP	-55 to 150
IRF7470TRPBF	International Rectifier	40	10	13	44	8-SO	-55 to 150
IRF7473TRPBF	Infineon Technologies	100	6.9	26	61	8-SO	-55 to 150
IRF7853TRPBF	Infineon Technologies	100	8.3	18	39	8-SO	-55 to 150
RS6G100BGTB1	Rohm Semiconductor	40	100	3.4	24	8-HSOP	-55 to 150
RS6G120BGTB1	Rohm Semiconductor	40	120	1.34	67	8-HSOP	-55 to 150

Engineering Selection Recommendations

Category A - Direct 40V Equivalents:

The AO4480 (UMW) and IRF7470TRPBF (International Rectifier) operate at the same 40V Vdss rating as the FDS4480. Both devices are RoHS3 compliant and carry active product status. The AO4480 provides superior current handling at 14A with identical on-resistance, while the IRF7470TRPBF delivers 10A with marginally higher on-resistance at 13mOhm. Both are suitable for direct functional replacement in 40V applications.

Category B - Higher Voltage Rated Alternatives:

The IRF7473TRPBF and IRF7853TRPBF (Infineon Technologies) are rated for 100V Vdss and provide enhanced voltage margin. Both devices are RoHS3 compliant with active product status. The IRF7853TRPBF offers superior current handling at 8.3A with lower on-resistance (18mOhm) compared to the IRF7473TRPBF (6.9A, 26mOhm). These devices are electrically compatible in 40V applications and operate at reduced stress relative to their maximum ratings.

Category C - High-Current Power MOSFETs:

The RS6G100BGTB1 and RS6G120BGTB1 (Rohm Semiconductor) are rated for 40V Vdss with significantly higher current ratings (100A and 120A respectively) and substantially lower on-resistance values (3.4mOhm and 1.34mOhm). These devices are housed in 8-HSOP packages and are RoHS3 compliant with active product status. Selection of these parts is appropriate for applications requiring enhanced current handling and reduced power dissipation.

All substitute parts maintain N-Channel MOSFET technology, surface mount configuration, and compliance certifications equivalent to or exceeding the FDS4480 baseline.

Frequently Asked Questions (FAQ)

Q: Can the AO4480 directly replace the FDS4480 in all applications?

A: The AO4480 maintains electrical compatibility at the 40V Vdss rating with superior current handling (14A versus 10.8A) and identical on-resistance (12mOhm). Package footprints are compatible (8-SOIC and 8-SOP). The operating temperature range differs slightly (-55°C to 150°C for AO4480 versus -55°C to 175°C for FDS4480). Applications operating above 150°C require the FDS4480.

Q: What is the functional difference between 40V and 100V rated devices?

A: Devices rated for 100V Vdss (IRF7473TRPBF, IRF7853TRPBF) operate at reduced voltage stress in 40V applications. These parts are electrically compatible but typically exhibit different on-resistance and gate charge characteristics due to different semiconductor design. Selection depends on application requirements for current handling and switching speed.

Q: Are the Rohm RS6G series parts suitable for standard FDS4480 applications?

A: The RS6G100BGTB1 and RS6G120BGTB1 maintain 40V Vdss rating with dramatically higher current capacity (100A and 120A) and lower on-resistance (3.4mOhm and 1.34mOhm). These devices are suitable for applications requiring enhanced current handling. The 8-HSOP package differs from the 8-SOIC footprint and requires PCB layout verification.

Q: What compliance certifications apply to all substitute parts?

A: All listed substitute parts carry RoHS3 compliance and unlimited moisture sensitivity level (MSL 1). All devices are in active production status. REACH status is unaffected for all parts. ECCN classification is EAR99 for all devices.

Q: How does gate charge affect device selection?

A: Gate charge (Qg) determines switching speed and driver circuit requirements. The FDS4480 specifies 41nC at 10V. Substitute parts range from 22nC (AO4480) to 67nC (RS6G120BGTB1). Lower gate charge enables faster switching; higher gate charge requires more driver current. Selection depends on circuit switching frequency and driver capability.

Q: Are package footprints interchangeable between 8-SOIC, 8-SOP, and 8-HSOP?

A: The 8-SOIC and 8-SOP packages share compatible pin spacing and footprints. The 8-HSOP package is a power variant with different thermal characteristics and may require PCB layout modifications. Verify package dimensions and thermal pad requirements before substitution.

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