FDS4470 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The FDS4470 is an N-Channel MOSFET manufactured by onsemi, rated for 40V drain-to-source voltage with 12.5A continuous drain current at 25°C. This device operates in the PowerTrench® series and is housed in an 8-SOIC surface mount package. The part maintains active product status with full RoHS3 compliance and unlimited moisture sensitivity level (MSL 1).

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining compatible package form factors and operating conditions. Alternative devices may be selected based on application requirements for current capacity, thermal performance, or specific gate charge characteristics.

Key Parameters

Parameter	FDS4470 Value	Unit	Substitution Relevance
Drain-to-Source Voltage (Vdss)	40	V	Critical - must equal or exceed application voltage
Continuous Drain Current (Id) @ 25°C	12.5	A (Ta)	Critical - must support circuit current requirements
On-Resistance (Rds On) @ 12.5A, 10V	9	mOhm	Important - affects power dissipation and efficiency
Gate Charge (Qg) @ 10V	63	nC	Important - affects switching speed and driver requirements
Power Dissipation (Max)	2.5	W (Ta)	Important - thermal management consideration
Operating Temperature Range	-55 to 175	°C (TJ)	Important - defines operational environment
Package Type	8-SOIC	-	Critical - physical and thermal compatibility
Vgs(th) @ 250µA	5	V	Important - gate drive voltage threshold

Substitute Part Grouping Explanation

Substitution logic for the FDS4470 is based on the following criteria:

Voltage Rating Compatibility: All substitute parts must maintain a Vdss rating of 40V or greater to ensure safe operation within the same voltage class.

Current Capacity: Substitute parts with continuous drain current ratings between 10A and 20.5A are considered functionally equivalent for most applications, as they operate within the same thermal and switching envelope as the FDS4470's 12.5A rating.

On-Resistance Performance: Rds On values in the range of 7.5mOhm to 10mOhm at 10V gate drive are acceptable substitutes, as they deliver comparable power efficiency and thermal characteristics.

Package Form Factor: The 8-SOIC package is the primary mechanical constraint. Substitute parts in 8-SOIC or compatible 8-SOP packages maintain PCB layout compatibility.

Gate Charge: Gate charge values between 37nC and 77nC are acceptable, as they fall within the switching speed envelope compatible with standard gate drivers.

Operating Temperature: Substitute parts with minimum junction temperature ratings of -55°C and maximum ratings of 150°C or higher maintain thermal compatibility with the FDS4470's -55°C to 175°C range.

Regulatory Compliance: All substitute parts must maintain RoHS3 compliance and MSL 1 rating to ensure manufacturing and environmental compatibility.

Parameter Comparison

Parameter	FDS4470	SI4840BDY-T1-GE3	AO4484	SI4124DY-T1-GE3	DMN3010LSS-13	RS6G100BGTB1	RS6G120BGTB1	Unit
Manufacturer	onsemi	Vishay Siliconix	Alpha & Omega	Vishay Siliconix	Diodes Inc.	Rohm	Rohm	-
Vdss	40	40	40	40	30	40	40	V
Id @ 25°C	12.5 (Ta)	19 (Tc)	10 (Ta)	20.5 (Tc)	16 (Ta)	100 (Tc)	120 (Tc)	A
Rds On @ 10V	9 @ 12.5A	9 @ 12.4A	10 @ 10A	7.5 @ 14A	9 @ 16A	3.4 @ 90A	1.34 @ 90A	mOhm
Qg @ 10V	63	50	37	77	43.7	24	67	nC
Vgs(th)	5 @ 250µA	3 @ 250µA	3 @ 250µA	3 @ 250µA	2 @ 250µA	2.5 @ 1mA	2.5 @ 1mA	V
Ciss @ 20V	2659	2000	1950	3540	2096	1510	4240	pF
Power Dissipation (Max)	2.5 (Ta)	2.5 (Ta), 6 (Tc)	1.7 (Ta)	2.5 (Ta), 5.7 (Tc)	2.5 (Ta)	3 (Ta), 59 (Tc)	104 (Tc)	W
Operating Temp Range	-55 to 175	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	°C (TJ)
Package	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOP	8-HSOP	8-HSOP	-
RoHS3 Compliant	Yes	Yes	Yes	Yes	Yes	Yes	Yes	-
MSL Rating	1	1	1	1	1	1	1	-

Engineering Selection Recommendations

Direct Pin-Compatible Substitutes (8-SOIC Package):

The SI4840BDY-T1-GE3, SI4124DY-T1-GE3, and AO4484 are pin-compatible alternatives in the 8-SOIC package. These devices maintain identical PCB footprints and thermal interface characteristics with the FDS4470. All three maintain RoHS3 compliance and MSL 1 ratings. The SI4840BDY-T1-GE3 provides the closest electrical match with 19A continuous current and 9mOhm on-resistance. The SI4124DY-T1-GE3 offers higher current capacity at 20.5A with improved on-resistance of 7.5mOhm. The AO4484 provides a lower-current alternative at 10A with slightly higher on-resistance of 10mOhm.

Package-Compatible Alternatives (8-SOP):

The DMN3010LSS-13 from Diodes Incorporated operates in an 8-SOP package with compatible thermal characteristics. This device is rated for 30V Vdss and 16A continuous current, making it suitable for applications with lower voltage requirements. The 9mOhm on-resistance matches the FDS4470 specification. This part maintains full RoHS3 compliance and MSL 1 rating.

High-Current Alternatives (8-HSOP Package):

The RS6G100BGTB1 and RS6G120BGTB1 from Rohm Semiconductor are rated for 40V operation with significantly higher current capacity (100A and 120A respectively). These devices employ the 8-HSOP package with enhanced thermal performance. The RS6G100BGTB1 delivers 3.4mOhm on-resistance, while the RS6G120BGTB1 achieves 1.34mOhm on-resistance. Both maintain RoHS3 compliance and MSL 1 ratings. These parts are suitable for applications requiring higher current handling or improved thermal dissipation.

Temperature Range Consideration:

The FDS4470 operates to 175°C junction temperature, while all listed substitutes operate to 150°C maximum. Applications requiring operation above 150°C junction temperature cannot use these substitute parts.

Frequently Asked Questions (FAQ)

Q: Can the AO4484 directly replace the FDS4470 in all applications?

A: The AO4484 is pin-compatible in the 8-SOIC package and maintains the same 40V voltage rating. However, the AO4484 is rated for 10A continuous current compared to the FDS4470's 12.5A. Substitution is valid only for applications where the circuit current requirement does not exceed 10A. The AO4484 also has a lower maximum junction temperature of 150°C versus the FDS4470's 175°C.

Q: What is the difference between the SI4840BDY-T1-GE3 and SI4840BDY-T1-E3?

A: Both variants are electrically identical N-Channel MOSFETs rated for 40V and 19A continuous current in the 8-SOIC package. The primary difference is REACH compliance status. The SI4840BDY-T1-GE3 is REACH Affected, while the SI4840BDY-T1-E3 has REACH information available upon request. Both maintain RoHS3 compliance and MSL 1 ratings.

Q: Why would I select the RS6G100BGTB1 or RS6G120BGTB1 over the FDS4470?

A: The Rohm devices are selected for applications requiring significantly higher current capacity (100A or 120A) or improved thermal performance. The 8-HSOP package provides superior thermal dissipation compared to the 8-SOIC package. The substantially lower on-resistance values (3.4mOhm and 1.34mOhm) reduce power dissipation in high-current switching applications. These devices are not direct replacements but rather upgrades for demanding thermal or current scenarios.

Q: Is the DMN3010LSS-13 a suitable substitute if my application operates at 30V?

A: The DMN3010LSS-13 is rated for 30V maximum Vdss and is suitable for applications with 30V or lower voltage requirements. The device provides 16A continuous current and 9mOhm on-resistance, both compatible with the FDS4470's electrical characteristics. The 8-SOP package maintains similar thermal properties to the 8-SOIC. This part is not suitable for applications requiring 40V operation.

Q: What are the gate charge implications when substituting parts?

A: Gate charge values range from 24nC (RS6G100BGTB1) to 77nC (SI4124DY-T1-GE3) across the substitute parts. Lower gate charge reduces switching losses and driver power requirements. Higher gate charge increases switching time and driver current demands. The FDS4470's 63nC gate charge is mid-range among the substitutes. Gate driver circuits must be verified to handle the gate charge of the selected substitute part.

Q: Are all substitute parts available in the same packaging options as the FDS4470?

A: The FDS4470 is available in Cut Tape (CT) and Digi-Reel® packaging. The SI4840BDY-T1-GE3, SI4124DY-T1-GE3, and AO4484 are also available in Cut Tape and Digi-Reel® formats. The DMN3010LSS-13, RS6G100BGTB1, and RS6G120BGTB1 are supplied in Tape & Reel (TR) format. Verify packaging availability with your supplier for production requirements.

Q: What is the maximum junction temperature limitation for substitutes?

A: All listed substitute parts are rated for a maximum junction temperature of 150°C, compared to the FDS4470's 175°C maximum. Applications designed to operate near or above 150°C junction temperature cannot use these substitute parts. Thermal analysis must confirm that the selected substitute part remains within its 150°C maximum rating under worst-case operating conditions.

Q: Can I use the SI4124DY-T1-GE3 as a direct upgrade for the FDS4470?

A: The SI4124DY-T1-GE3 is pin-compatible in the 8-SOIC package and rated for 40V operation. It provides higher continuous current (20.5A versus 12.5A) and improved on-resistance (7.5mOhm versus 9mOhm). This part is suitable as an upgrade for applications requiring higher current capacity or improved efficiency. The 150°C maximum junction temperature remains a limitation compared to the FDS4470's 175°C rating.

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