FDS4465-G Equivalent & Substitute Parts

Part Overview

The FDS4465-G is a P-Channel MOSFET manufactured by onsemi, designed for surface mount applications in the 8-SOIC package. This device operates at a maximum drain-to-source voltage of 20V with a continuous drain current rating of 13.5A at 25°C and a maximum power dissipation of 1.2W. The FDS4465-G is classified as obsolete, making identification of equivalent alternatives necessary for ongoing design support, production continuity, and component sourcing in applications where this MOSFET was previously specified.

Key Parameters

Parameter	Value	Unit
FET Type	P-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	20	V
Current - Continuous Drain (Id) @ 25°C	13.5	A (Ta)
Rds On (Max) @ Id, Vgs	8.5	mOhm @ 13.5A, 4.5V
Vgs(th) (Max) @ Id	1.5	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	120	nC @ 4.5V
Vgs (Max)	±8	V
Input Capacitance (Ciss) (Max) @ Vds	8237	pF @ 10V
Power Dissipation (Max)	1.2	W (Ta)
Operating Temperature Range	-55 to 175	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	8-SOIC (0.154", 3.90mm Width)	—
Series	PowerTrench®	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the FDS4465-G is determined by strict equivalence across the following critical parameters:

Electrical Characteristics:

FET Type: P-Channel configuration
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V maximum rating
Continuous Drain Current (Id) @ 25°C: 13.5A
On-State Resistance (Rds On): 8.5mOhm @ 13.5A, 4.5V
Gate Threshold Voltage (Vgs(th)): 1.5V @ 250µA
Gate Charge (Qg): 120nC @ 4.5V
Maximum Gate Voltage (Vgs): ±8V
Input Capacitance (Ciss): 8237pF @ 10V
Power Dissipation: 1.2W (Ta)
Operating Temperature Range: -55°C to 175°C (TJ)

Mechanical & Packaging Requirements:

Mounting Type: Surface Mount
Package: 8-SOIC (0.154", 3.90mm Width)
Moisture Sensitivity Level: 1 (Unlimited)

A substitute part must match all electrical parameters and maintain identical package specifications to ensure direct replacement without circuit redesign or PCB layout modification.

Parameter Comparison

Parameter	FDS4465-G (Main Part)	FDS4465-G (Substitute)	Match Status
Manufacturer	onsemi	onsemi	Identical
FET Type	P-Channel	P-Channel	Identical
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	Identical
Vdss	20V	20V	Identical
Id @ 25°C	13.5A (Ta)	13.5A (Ta)	Identical
Rds On (Max)	8.5mOhm @ 13.5A, 4.5V	8.5mOhm @ 13.5A, 4.5V	Identical
Vgs(th) (Max)	1.5V @ 250µA	1.5V @ 250µA	Identical
Gate Charge (Qg)	120nC @ 4.5V	120nC @ 4.5V	Identical
Vgs (Max)	±8V	±8V	Identical
Ciss (Max)	8237pF @ 10V	8237pF @ 10V	Identical
Power Dissipation (Max)	1.2W (Ta)	1.2W (Ta)	Identical
Operating Temperature	-55°C to 175°C (TJ)	-55°C to 175°C (TJ)	Identical
Package / Case	8-SOIC (0.154", 3.90mm Width)	8-SOIC (0.154", 3.90mm Width)	Identical
MSL	1 (Unlimited)	1 (Unlimited)	Identical
REACH Status	REACH Unaffected	REACH Unaffected	Identical

Engineering Selection Recommendations

The FDS4465-G is classified as obsolete. The substitute part identified (FDS4465-G) is parametrically identical across all electrical and mechanical specifications. Both parts carry REACH Unaffected compliance status and MSL Level 1 (Unlimited) moisture sensitivity rating, indicating equivalent environmental and regulatory compliance.

Selection of the substitute part is based on complete parameter equivalence and identical packaging specifications. No derating or circuit modification is required for direct substitution. Both parts are manufactured by onsemi and operate within the same electrical envelope, thermal range, and mechanical footprint.

Frequently Asked Questions (FAQ)

Q: Can the FDS4465-G substitute be used as a direct replacement in existing designs?

A: Yes. The substitute part is parametrically identical to the original FDS4465-G across all electrical characteristics, gate drive requirements, thermal performance, and package dimensions. Direct PCB substitution is supported without circuit redesign.

Q: Are there any differences in gate charge or switching characteristics between the main part and substitute?

A: No. Both parts specify identical gate charge (120nC @ 4.5V), threshold voltage (1.5V @ 250µA), and input capacitance (8237pF @ 10V). Switching performance and gate drive requirements are equivalent.

Q: Does the 8-SOIC package remain the same for both parts?

A: Yes. Both the main part and substitute use the 8-SOIC package with 0.154" (3.90mm) width. Pin configuration and PCB footprint are identical, enabling direct component replacement without layout modification.

Q: What is the significance of the obsolete product status?

A: The FDS4465-G is classified as obsolete, meaning onsemi has discontinued active production and support. Identifying parametrically equivalent alternatives ensures design continuity and component availability for applications where this MOSFET was previously specified.

Q: Are compliance certifications identical between the parts?

A: Yes. Both parts carry REACH Unaffected status and MSL Level 1 (Unlimited) rating. Environmental and regulatory compliance profiles are equivalent.

Q: What are the critical parameters for confirming substitution compatibility?

A: The critical parameters are: P-Channel FET type, 20V Vdss rating, 13.5A continuous drain current, 8.5mOhm Rds On, 8-SOIC package, and -55°C to 175°C operating temperature range. All must match for direct substitution.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message