FDS3890 Equivalent & Substitute Parts

Part Overview

The FDS3890 is a dual N-channel MOSFET array manufactured by onsemi, designed for surface mount applications in the 8-SOIC package. This device features an 80V drain-to-source voltage rating with 4.7A continuous drain current capability and is classified as a logic level gate MOSFET within the PowerTrench® series. The part maintains active product status with full RoHS3 compliance and unlimited moisture sensitivity rating.

Substitute parts are identified when equivalent electrical and mechanical parameters align within the allowed specifications for dual N-channel MOSFET arrays in surface mount packages. Alternatives become necessary when the primary part is unavailable, when inventory constraints exist, or when design flexibility permits operation within the electrical tolerances of substitute devices.

Substiute Parts

FDS3890

onsemiIn Stock: 3507FDS3890 Datasheet

Current PartRFQ

DMN6040SSD-13

Diodes IncorporatedIn Stock: 77976DMN6040SSD-13 Datasheet

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IRF7380TRPBF

Infineon TechnologiesIn Stock: 25384IRF7380TRPBF Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the FDS3890 are selected based on the following criteria:

Primary Matching Parameters:

• Configuration: 2 N-Channel (Dual) MOSFET array
• Mounting Type: Surface Mount
• Package: 8-SOIC form factor (0.154", 3.90mm Width)
• FET Feature: Logic Level Gate
• Technology: MOSFET (Metal Oxide)

Electrical Compatibility Parameters:

• Drain to Source Voltage (Vdss): Equal to or greater than 80V
• Continuous Drain Current (Id): Equal to or greater than 4.7A at 25°C
• On-State Resistance (Rds On): Equal to or less than 44mOhm at rated conditions
• Gate Threshold Voltage (Vgs(th)): Within logic level specifications (≤4V @ 250µA)

Compliance & Certification:

• RoHS3 Compliant
• Moisture Sensitivity Level (MSL): 1 (Unlimited)
• Product Status: Active

Substitute parts must satisfy all primary matching parameters and maintain electrical compatibility within the specified tolerances. Parts that exceed the main device specifications in voltage, current, or thermal capability are acceptable for substitution.

Parameter Comparison

Engineering Selection Recommendations

FDS3890 (Primary Part)

The FDS3890 remains the optimal selection when the full electrical specification envelope is required. This device provides the highest continuous drain current (4.7A) and the widest operating temperature range (-55°C to 175°C), making it suitable for applications demanding maximum thermal headroom and current capacity. All compliance certifications are current and the part maintains active product status with substantial inventory availability (3410 pcs).

DMN6040SSD-13 (Diodes Incorporated)

The DMN6040SSD-13 is suitable for applications where the 80V voltage rating of the FDS3890 is not required and operation at 60V is acceptable. This substitute provides superior continuous drain current (5A) and lower on-state resistance (40mOhm), resulting in reduced power dissipation. The maximum operating temperature is limited to 150°C, which may restrict use in high-temperature environments. This part carries the highest inventory availability (77900 pcs) among all listed options. Selection of this substitute is appropriate when voltage derating is permissible and thermal management is not a limiting factor.

IRF7380TRPBF (Infineon Technologies)

The IRF7380TRPBF maintains the 80V voltage rating of the FDS3890 and is classified within the HEXFET® series. This device exhibits higher on-state resistance (73mOhm) and lower continuous drain current (3.6A) compared to the primary part, resulting in increased power dissipation per ampere. The maximum operating temperature is 150°C. This substitute is appropriate for applications where the 80V voltage rating is essential but current requirements do not exceed 3.6A and thermal dissipation can be managed within the 2W power envelope. Inventory availability is moderate (25300 pcs).

All three devices maintain RoHS3 compliance, unlimited moisture sensitivity rating (MSL 1), and active product status, ensuring compatibility with current manufacturing and environmental standards.

Frequently Asked Questions (FAQ)

Q: Can the DMN6040SSD-13 be used as a direct replacement for the FDS3890?

A: The DMN6040SSD-13 is mechanically compatible (8-SOIC package) and functionally equivalent as a dual N-channel logic level MOSFET. However, the voltage rating is reduced from 80V to 60V. Direct substitution is permissible only in applications where the maximum drain-to-source voltage does not exceed 60V. The superior current rating (5A vs. 4.7A) and lower on-state resistance (40mOhm vs. 44mOhm) provide performance advantages in current-limited designs.

Q: What are the thermal considerations when selecting between these three parts?

A: The FDS3890 supports operation to 175°C junction temperature, providing the widest thermal margin. Both the DMN6040SSD-13 and IRF7380TRPBF are limited to 150°C maximum junction temperature. In applications requiring sustained operation above 150°C, the FDS3890 is the only suitable option. The IRF7380TRPBF exhibits the highest power dissipation (2W maximum) but the lowest continuous drain current (3.6A), resulting in higher on-state resistance and greater heat generation per ampere of current.

Q: Are all three parts pin-compatible?

A: All three devices are housed in the 8-SOIC package with identical physical dimensions (0.154", 3.90mm width). Pin compatibility is confirmed for dual N-channel MOSFET arrays in this package configuration. PCB layout and footprint requirements are identical across all three parts.

Q: Which substitute offers the best performance for high-current applications?

A: The DMN6040SSD-13 provides the highest continuous drain current rating (5A) and the lowest on-state resistance (40mOhm @ 4.5A, 10V). For applications requiring maximum current delivery with minimal resistive losses, this part is the optimal choice. However, this advantage is limited to designs operating at 60V or below.

Q: What is the significance of the gate charge (Qg) differences between these parts?

A: Gate charge directly affects switching speed and driver power requirements. The FDS3890 exhibits the highest gate charge (35nC @ 10V), while the DMN6040SSD-13 and IRF7380TRPBF are lower (22.4nC and 23nC respectively). Lower gate charge reduces driver current demands and enables faster switching transitions. This parameter is relevant for high-frequency switching applications where driver efficiency is critical.

Q: Are there any compliance or certification differences between these parts?

A: All three devices are RoHS3 compliant, carry unlimited moisture sensitivity rating (MSL 1), and maintain active product status. No compliance or certification differences exist. All parts are suitable for applications subject to RoHS and REACH regulations.

Q: What inventory considerations should influence part selection?

A: The DMN6040SSD-13 offers the highest inventory availability (77900 pcs), followed by the IRF7380TRPBF (25300 pcs) and the FDS3890 (3410 pcs). For applications where substitution is electrically permissible, the DMN6040SSD-13 provides superior supply security and shorter lead times.