FDS3680 Equivalent & Substitute Parts

Part Overview

The FDS3680 is an N-Channel MOSFET manufactured by onsemi, rated for 100V drain-to-source voltage with a continuous drain current of 5.2A at 25°C. This device is housed in an 8-SOIC surface mount package and features the PowerTrench® technology platform. The FDS3680 is classified as obsolete, making identification of equivalent substitute components necessary for ongoing design support and procurement continuity.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	5.2	A (Ta)
Rds On (Max) @ Id, Vgs	46	mOhm @ 5.2A, 10V
Gate Charge (Qg) (Max) @ Vgs	53	nC @ 10V
Vgs(th) (Max) @ Id	4	V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds	1735	pF @ 50V
Power Dissipation (Max)	2.5	W (Ta)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	8-SOIC	Surface Mount
Vgs (Max)	±20	V

Substitute Part Grouping Explanation

Substitution of the FDS3680 is determined by strict equivalence across the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

Drain to Source Voltage (Vdss): Must equal or exceed 100V
Package Type: Must be 8-SOIC surface mount configuration
FET Type: Must be N-Channel MOSFET technology
Operating Temperature Range: Must support -55°C to 150°C (TJ)
Gate Voltage Rating (Vgs Max): Must support ±20V

Performance Parameters:

Continuous Drain Current (Id): Substitute must meet or exceed 5.2A at 25°C
Rds On characteristics: Substitute must provide acceptable on-resistance at specified gate voltage
Gate Charge (Qg): Lower values indicate improved switching performance
Input Capacitance (Ciss): Lower values indicate reduced gate drive requirements

The SI4100DY-T1-GE3 meets all mandatory electrical and mechanical substitution criteria for the FDS3680.

Parameter Comparison

Parameter	FDS3680 (onsemi)	SI4100DY-T1-GE3 (Vishay Siliconix)	Unit
Drain to Source Voltage (Vdss)	100	100	V
Continuous Drain Current (Id) @ 25°C	5.2 (Ta)	6.8 (Tc)	A
Rds On (Max) @ Vgs 10V	46 @ 5.2A	63 @ 4.4A	mOhm
Vgs(th) (Max) @ Id	4 @ 250µA	4.5 @ 250µA	V
Gate Charge (Qg) (Max) @ Vgs 10V	53	20	nC
Input Capacitance (Ciss) (Max) @ Vds 50V	1735	600	pF
Power Dissipation (Max)	2.5 (Ta)	2.5 (Ta), 6 (Tc)	W
Operating Temperature Range	-55 to 150	-55 to 150	°C (TJ)
Package Type	8-SOIC	8-SOIC	Surface Mount
Vgs (Max)	±20	±20	V
FET Type	N-Channel MOSFET	N-Channel MOSFET	Technology

Engineering Selection Recommendations

Product Status Consideration: The FDS3680 carries an obsolete product status, necessitating transition to active production alternatives. The SI4100DY-T1-GE3 is classified as active, ensuring long-term availability and manufacturing support.

Compliance and Certifications: The SI4100DY-T1-GE3 holds RoHS3 compliance certification, meeting current environmental and regulatory standards. Both devices share identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications, confirming trade compliance equivalence.

Electrical Performance: The SI4100DY-T1-GE3 exceeds the FDS3680 in continuous drain current capability (6.8A versus 5.2A), providing design margin. Gate charge is significantly lower (20nC versus 53nC), reducing gate drive power requirements. Input capacitance is substantially reduced (600pF versus 1735pF), improving switching speed and reducing EMI generation.

Packaging and Moisture Sensitivity: Both devices utilize identical 8-SOIC surface mount packaging with MSL 1 (Unlimited) moisture sensitivity rating, ensuring direct PCB layout compatibility without design modification.

Frequently Asked Questions (FAQ)

Q: Can the SI4100DY-T1-GE3 directly replace the FDS3680 without PCB layout changes?

A: Yes. Both devices are housed in 8-SOIC surface mount packages with identical pinout and footprint dimensions (0.154" width, 3.90mm). No PCB layout modification is required.

Q: What are the key electrical differences between these devices?

A: The SI4100DY-T1-GE3 provides higher continuous drain current (6.8A versus 5.2A), lower gate charge (20nC versus 53nC), and significantly lower input capacitance (600pF versus 1735pF). On-resistance at 10V gate voltage is higher (63mOhm at 4.4A versus 46mOhm at 5.2A), but this is measured at different current levels.

Q: Are there any thermal performance differences?

A: The SI4100DY-T1-GE3 supports higher power dissipation under case temperature conditions (6W at Tc versus 2.5W at Ta for the FDS3680). Both devices operate across the same temperature range (-55°C to 150°C TJ).

Q: What is the significance of lower gate charge in the SI4100DY-T1-GE3?

A: Lower gate charge (20nC versus 53nC) reduces the energy required to switch the device on and off, resulting in lower gate drive power consumption and improved switching efficiency in high-frequency applications.

Q: Are both devices RoHS compliant?

A: The SI4100DY-T1-GE3 is RoHS3 compliant. The FDS3680 product status documentation does not specify RoHS compliance. For applications requiring RoHS certification, the SI4100DY-T1-GE3 is the appropriate selection.

Q: What is the difference between Ta and Tc temperature ratings?

A: Ta refers to ambient temperature, while Tc refers to case temperature. The SI4100DY-T1-GE3 power dissipation rating of 6W (Tc) reflects measurement at the device case, providing higher thermal performance than the 2.5W (Ta) rating measured at ambient conditions.

Q: Can the SI4100DY-T1-GE3 be used in applications originally designed for the FDS3680?

A: Yes, provided the application does not depend on the specific on-resistance characteristics of the FDS3680 at 5.2A. The SI4100DY-T1-GE3 meets all voltage, current, and thermal requirements. Verify gate drive circuit compatibility with the lower gate charge specification.

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