FDS3601 Equivalent & Substitute Parts

Part Overview

The FDS3601 is a dual N-channel MOSFET array manufactured by onsemi, designed for surface mount applications in the PowerTrench® series. This device features a 100V drain-to-source voltage rating with 1.3A continuous drain current capability and 900mW maximum power dissipation. The FDS3601 is classified as obsolete, necessitating identification of active equivalent and substitute components for new designs and ongoing production requirements. Substitute parts must maintain functional compatibility while accommodating differences in electrical performance and package configurations.

Substiute Parts

FDS3601
onsemiIn Stock: 2126FDS3601 Datasheet
FDS3601
Current Part
FDC3601N
onsemiIn Stock: 40824FDC3601N Datasheet
FDC3601N
Similar
IRF7103TRPBF
Infineon TechnologiesIn Stock: 17412IRF7103TRPBF Datasheet
IRF7103TRPBF
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Key Parameters

Parameter Value Unit
Configuration 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 100V V
Current - Continuous Drain (Id) @ 25°C 1.3A A
Rds On (Max) @ Id, Vgs 480mOhm @ 1.3A, 10V mOhm
Power - Max 900mW mW
Operating Temperature Range -55°C to 175°C °C
Package / Case 8-SOIC (0.154", 3.90mm Width)
Mounting Type Surface Mount

Substitute Part Grouping Explanation

Substitution of the FDS3601 is determined by the following critical parameters: dual N-channel configuration, drain-to-source voltage rating, continuous drain current capability, on-resistance characteristics, and surface mount package compatibility. Two substitute parts are identified based on these criteria:

FDC3601N (onsemi): Maintains the same manufacturer, PowerTrench® series, dual N-channel configuration, and 100V Vdss rating. This part is an active product with reduced current rating (1A versus 1.3A) and lower maximum power dissipation (700mW versus 900mW). Package differs from 8-SOIC to SuperSOT™-6 (SOT-23-6), requiring PCB layout modification. Operating temperature range is reduced to -55°C to 150°C.

IRF7103TRPBF (Infineon Technologies): Provides dual N-channel configuration in 8-SOIC package matching the original footprint. However, this part operates at reduced voltage rating (50V versus 100V) with significantly higher current capability (3A versus 1.3A) and lower on-resistance (130mOhm versus 480mOhm). This substitute is suitable only for applications where the 50V voltage rating is sufficient and the enhanced current handling is acceptable or beneficial.

Parameter Comparison

Parameter FDS3601 FDC3601N IRF7103TRPBF
Manufacturer onsemi onsemi Infineon Technologies
Product Status Obsolete Active Active
Configuration 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 100V 100V 50V
Current - Continuous Drain (Id) @ 25°C 1.3A 1A 3A
Rds On (Max) @ Id, Vgs 480mOhm @ 1.3A, 10V 500mOhm @ 1A, 10V 130mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5nC @ 10V 5nC @ 10V 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 153pF @ 50V 153pF @ 50V 290pF @ 25V
Power - Max 900mW 700mW 2W
Operating Temperature Range -55°C to 175°C -55°C to 150°C -55°C to 150°C
Package / Case 8-SOIC (0.154", 3.90mm Width) SOT-23-6 Thin, TSOT-23-6 8-SOIC (0.154", 3.90mm Width)
Mounting Type Surface Mount Surface Mount Surface Mount
RoHS Status Not specified ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

FDC3601N Selection Criteria:

The FDC3601N is the preferred substitute when voltage and power requirements align with the reduced specifications. This part maintains the same 100V Vdss rating and similar on-resistance characteristics, ensuring functional compatibility in applications designed for the FDS3601 electrical envelope. The FDC3601N is an active product with ROHS3 compliance, providing long-term availability and regulatory alignment. PCB redesign is required due to package change from 8-SOIC to SuperSOT™-6. The reduced current rating (1A versus 1.3A) and maximum power dissipation (700mW versus 900mW) must be verified against circuit requirements. The operating temperature range reduction to 150°C maximum junction temperature requires confirmation for applications requiring extended thermal operation.

IRF7103TRPBF Selection Criteria:

The IRF7103TRPBF maintains the original 8-SOIC package footprint, eliminating PCB layout modifications. This part is suitable for applications where the 50V voltage rating is sufficient and where enhanced current handling (3A) and lower on-resistance (130mOhm) provide performance benefits. The IRF7103TRPBF is an active product with ROHS3 compliance. Circuit designs must accommodate the reduced voltage rating; this substitute is not suitable for applications requiring the full 100V capability of the FDS3601. The increased gate charge (30nC versus 5nC) and input capacitance (290pF versus 153pF) may affect switching speed and gate drive requirements.

Frequently Asked Questions (FAQ)

Q: Can the FDC3601N directly replace the FDS3601 without PCB modifications?

A: No. The FDC3601N uses a SuperSOT™-6 (SOT-23-6) package, while the FDS3601 uses an 8-SOIC package. PCB layout and footprint changes are required. Pin assignments and lead spacing differ between these packages.

Q: What is the primary limitation of using IRF7103TRPBF as a substitute?

A: The IRF7103TRPBF has a maximum drain-to-source voltage rating of 50V, compared to the FDS3601's 100V rating. This substitute is only suitable for applications where circuit voltages do not exceed 50V. Exceeding this voltage will result in device failure.

Q: Are both substitute parts RoHS compliant?

A: Yes. Both FDC3601N and IRF7103TRPBF are ROHS3 compliant. The FDS3601 compliance status is not specified in available documentation.

Q: How does the reduced current rating of FDC3601N affect circuit design?

A: The FDC3601N is rated for 1A continuous drain current, compared to the FDS3601's 1.3A. Applications requiring continuous current above 1A must use the IRF7103TRPBF or alternative parts. Verify actual circuit current requirements before selection.

Q: What is the impact of increased gate charge in the IRF7103TRPBF?

A: The IRF7103TRPBF has a gate charge of 30nC at 10V, compared to 5nC for the FDS3601. Higher gate charge requires greater gate drive current and may increase switching losses. Gate driver circuits must be verified for compatibility with the increased charge requirement.

Q: Can the FDS3601 operate at temperatures above 150°C?

A: Yes. The FDS3601 is rated for junction temperatures up to 175°C. Both substitute parts (FDC3601N and IRF7103TRPBF) are limited to 150°C maximum junction temperature. Applications requiring operation above 150°C cannot use these substitutes.

Q: What is the difference in on-resistance between the three parts?

A: FDS3601: 480mOhm @ 1.3A, 10V; FDC3601N: 500mOhm @ 1A, 10V; IRF7103TRPBF: 130mOhm @ 3A, 10V. The IRF7103TRPBF has significantly lower on-resistance, reducing conduction losses but requiring voltage rating verification.

Q: Are moisture sensitivity levels identical across all three parts?

A: Yes. All three parts have MSL 1 (Unlimited), indicating no moisture sensitivity restrictions for storage and handling.

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