FDS3590 Equivalent & Substitute Parts

Part Overview

The FDS3590 is an N-Channel MOSFET manufactured by onsemi, rated for 80V drain-to-source voltage with 6.5A continuous drain current at 25°C. This device is housed in an 8-SOIC surface mount package and belongs to the PowerTrench® series. The part is currently in active production status with ROHS3 compliance and unlimited moisture sensitivity rating (MSL 1).

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining surface mount compatibility and compliance certifications. The FDS3590 serves applications requiring moderate voltage and current handling in compact form factors, making alternative devices necessary for inventory management, supply chain continuity, and application-specific optimization.

Substiute Parts

FDS3590
onsemiIn Stock: 23324FDS3590 Datasheet
FDS3590
Current Part
DMN6040SSS-13
Diodes IncorporatedIn Stock: 34747DMN6040SSS-13 Datasheet
DMN6040SSS-13
Similar
RS6N120BHTB1
Rohm SemiconductorIn Stock: 2621RS6N120BHTB1 Datasheet
RS6N120BHTB1
Similar

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 80 V
Continuous Drain Current (Id) @ 25°C 6.5 A (Ta)
Rds On (Max) @ Id, Vgs 39 mOhm @ 6.5A, 10V
Gate Threshold Voltage (Vgs(th)) @ Id 4 V @ 250µA
Gate Charge (Qg) @ Vgs 35 nC @ 10V
Power Dissipation (Max) 2.5 W (Ta)
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Surface Mount -
Package 8-SOIC -
RoHS Status ROHS3 Compliant -

Substitute Part Grouping Explanation

Substitution eligibility for the FDS3590 is determined by the following critical parameters:

Voltage Rating Compatibility: The drain-to-source voltage (Vdss) must equal or exceed 80V to maintain circuit protection margins. Devices rated below 80V are not suitable for direct substitution.

Current Handling Capacity: The continuous drain current (Id) at 25°C must meet or exceed 6.5A to ensure the substitute can handle the same load conditions without thermal stress.

On-State Resistance (Rds On): The maximum on-state resistance must not significantly exceed 39mOhm at the specified gate-source voltage to maintain comparable power dissipation and thermal performance.

Gate Charge (Qg): Gate charge affects switching speed and driver requirements. Substitutes with substantially different gate charge values may require circuit redesign.

Package and Mounting: Surface mount compatibility with 8-pin configurations ensures mechanical and electrical interchangeability on printed circuit boards.

Compliance Certifications: All substitutes must maintain ROHS3 compliance and equivalent moisture sensitivity ratings to ensure regulatory and environmental compatibility.

The following substitute parts meet these criteria within acceptable parameter ranges:

  • DMN6040SSS-13 (Diodes Incorporated): Reduced voltage rating (60V) with lower current capacity (5.5A), suitable for applications with lower voltage requirements.
  • RS6N120BHTB1 (Rohm Semiconductor): Matched voltage rating (80V) with significantly higher current capacity (120A), suitable for high-current applications requiring the same voltage class.

Parameter Comparison

Parameter FDS3590 (onsemi) DMN6040SSS-13 (Diodes Inc.) RS6N120BHTB1 (Rohm Semi.) Unit
Drain to Source Voltage (Vdss) 80 60 80 V
Continuous Drain Current (Id) @ 25°C 6.5 5.5 120 A
Rds On (Max) @ Vgs 39 @ 10V 40 @ 10V 4.9 @ 6V mOhm
Gate Threshold Voltage (Vgs(th)) @ Id 4 @ 250µA 3 @ 250µA 4 @ 1mA V
Gate Charge (Qg) @ Vgs 35 @ 10V 22.4 @ 10V 53 @ 10V nC
Power Dissipation (Max) 2.5 1.5 104 W
Operating Temperature Range -55 to 150 -55 to 150 -55 to 150 °C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount -
Package 8-SOIC 8-SO 8-HSOP -
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant -
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) -

Engineering Selection Recommendations

FDS3590 (Primary Part): Select this part for applications requiring the specified 80V/6.5A performance envelope with proven PowerTrench® technology. The part maintains active production status with 23,300 units in stock, ensuring supply availability. ROHS3 compliance and unlimited MSL rating support deployment in standard manufacturing environments without special handling requirements.

DMN6040SSS-13 (Lower Voltage Alternative): This Diodes Incorporated device is suitable only for applications where the circuit voltage does not exceed 60V. The 5.5A current rating is marginally lower than the FDS3590, and the 40mOhm on-state resistance is comparable. Gate charge is reduced to 22.4nC, potentially improving switching efficiency in lower-voltage circuits. This part maintains ROHS3 compliance and unlimited MSL. Use this substitute when voltage derating is acceptable and lower gate charge is beneficial.

RS6N120BHTB1 (Higher Current Alternative): This Rohm Semiconductor device matches the 80V voltage rating of the FDS3590 but provides substantially higher current capacity (120A). The significantly lower on-state resistance (4.9mOhm) results in reduced power dissipation and improved thermal performance in high-current applications. The 8-HSOP package differs from the 8-SOIC, requiring PCB layout modification. Gate charge is increased to 53nC. This part maintains ROHS3 compliance and unlimited MSL. Use this substitute for applications requiring higher current handling within the same voltage class, accepting the package change requirement.

All three devices maintain identical operating temperature ranges (-55°C to 150°C), ROHS3 compliance, and unlimited moisture sensitivity ratings, ensuring regulatory and environmental compatibility across substitution scenarios.

Frequently Asked Questions (FAQ)

Q: Can the DMN6040SSS-13 be used as a direct replacement for the FDS3590?

A: The DMN6040SSS-13 is not a direct replacement due to its reduced drain-to-source voltage rating of 60V compared to the FDS3590's 80V. Direct substitution is only appropriate in applications where the circuit voltage does not exceed 60V. The current rating (5.5A) is also slightly lower. Verify circuit voltage requirements before substitution.

Q: What are the package differences between these devices?

A: The FDS3590 uses an 8-SOIC package (0.154", 3.90mm width). The DMN6040SSS-13 uses an 8-SO package, which is mechanically similar but may have minor footprint variations. The RS6N120BHTB1 uses an 8-HSOP package, which is physically larger and requires different PCB layout. Package compatibility must be confirmed before substitution.

Q: Is the RS6N120BHTB1 suitable for applications designed for the FDS3590?

A: The RS6N120BHTB1 matches the 80V voltage rating and exceeds the current capacity of the FDS3590. However, the 8-HSOP package is larger than the 8-SOIC, requiring PCB redesign. The significantly higher gate charge (53nC versus 35nC) may affect switching characteristics and driver requirements. This device is suitable for high-current applications within the 80V class, but circuit redesign is necessary.

Q: Do all three devices have the same compliance certifications?

A: Yes. All three devices are ROHS3 compliant with unlimited moisture sensitivity level (MSL 1), ensuring equivalent regulatory and environmental compatibility. All operate across the same temperature range (-55°C to 150°C).

Q: What is the significance of on-state resistance (Rds On) differences?

A: On-state resistance directly affects power dissipation and thermal performance. The FDS3590 has 39mOhm at 10V. The DMN6040SSS-13 has 40mOhm at 10V (comparable). The RS6N120BHTB1 has 4.9mOhm at 6V (significantly lower), resulting in reduced heat generation in high-current applications. Lower Rds On improves efficiency but may require different gate drive voltage optimization.

Q: How does gate charge affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The FDS3590 has 35nC at 10V. The DMN6040SSS-13 has 22.4nC (lower, faster switching). The RS6N120BHTB1 has 53nC (higher, slower switching). Lower gate charge reduces driver power requirements and improves switching speed. Higher gate charge may require more robust gate drive circuits but is typical for high-current devices.

Q: Can inventory levels influence substitution decisions?

A: Inventory availability is a practical consideration. The FDS3590 has 23,300 units in stock. The DMN6040SSS-13 has 34,650 units. The RS6N120BHTB1 has 2,573 units. Substitution decisions should prioritize electrical compatibility first, with inventory levels as a secondary factor for supply chain planning.

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