FDS3170N7 Equivalent & Substitute Parts

Part Overview

The FDS3170N7 is an N-Channel MOSFET manufactured by onsemi, rated for 100V drain-to-source voltage with a continuous drain current of 6.7A at 25°C. This device is housed in an 8-SO FLMP surface mount package and is part of the PowerTrench® series. The FDS3170N7 is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support and production continuity. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, and thermal characteristics while accommodating potential package differences.

Substiute Parts

FDS3170N7

onsemiIn Stock: 1295FDS3170N7 Datasheet

Current PartRFQ

FDMS3672

onsemiIn Stock: 10259FDMS3672 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the FDS3170N7 is based on electrical parameter equivalence within the following criteria:

Voltage Rating Compatibility: The substitute part must maintain the same 100V Vdss rating to ensure safe operation in the original circuit topology.

Current Handling: The substitute part must support continuous drain current at or above 6.7A at 25°C ambient temperature to meet or exceed the original design specifications.

On-Resistance (Rds On): The substitute part must maintain Rds On values at or below the original specification to prevent thermal runaway and ensure efficient switching performance.

Gate Charge and Capacitance: The substitute part should maintain similar gate charge and input capacitance characteristics to preserve gate drive circuit compatibility and switching speed.

Operating Temperature Range: The substitute part must support the full -55°C to 150°C junction temperature range.

Mounting Type: Surface mount compatibility is required; package form factor differences are acceptable provided the substitute is surface mountable.

The FDMS3672 meets these substitution criteria with equivalent voltage ratings, superior current handling, improved on-resistance characteristics, and active product status.

Parameter Comparison

Engineering Selection Recommendations

The FDMS3672 is the qualified substitute for the obsolete FDS3170N7 based on the following engineering criteria:

Electrical Equivalence: Both devices share identical 100V Vdss ratings and gate threshold voltage specifications. The FDMS3672 provides superior continuous drain current (7.4A versus 6.7A) and lower on-resistance (23 mOhm versus 26 mOhm), resulting in reduced power dissipation and improved thermal performance in the application.

Product Status and Supply Continuity: The FDS3170N7 is obsolete with no ongoing production. The FDMS3672 is an active product with 10,165 units in stock, ensuring long-term availability and supply chain stability.

Compliance and Certifications: The FDMS3672 carries RoHS3 compliance certification, meeting current environmental and regulatory requirements. Both devices maintain REACH Unaffected status and EAR99 export classification.

Gate Drive Considerations: The FDMS3672 exhibits lower gate charge (44 nC versus 77 nC), which may reduce gate drive circuit stress and improve switching efficiency. Input capacitance remains equivalent, preserving gate drive timing characteristics.

Package Transition: The FDMS3672 uses an 8-MLP (5x6) PowerWDFN package versus the original 8-SOIC package. This represents a package form factor change that requires PCB layout modification but provides superior thermal performance through the larger package footprint and exposed thermal pad design.

Frequently Asked Questions (FAQ)

Q: Can the FDMS3672 be used as a direct pin-for-pin replacement for the FDS3170N7?

A: The FDMS3672 is electrically compatible but not a direct pin-for-pin replacement. While both are 8-pin surface mount devices, the FDMS3672 uses an 8-MLP (5x6) PowerWDFN package footprint, whereas the FDS3170N7 uses an 8-SOIC package. PCB layout and footprint modifications are required.

Q: What are the key electrical advantages of the FDMS3672 over the FDS3170N7?

A: The FDMS3672 provides three primary electrical improvements: higher continuous drain current (7.4A versus 6.7A), lower on-resistance (23 mOhm versus 26 mOhm), and significantly lower gate charge (44 nC versus 77 nC). These characteristics result in reduced power dissipation and improved switching performance.

Q: Is the FDMS3672 suitable for applications requiring the full -55°C to 150°C operating temperature range?

A: Yes. The FDMS3672 supports the complete -55°C to 150°C junction temperature range, matching the original FDS3170N7 specification.

Q: How does the package change from 8-SOIC to 8-MLP affect thermal performance?

A: The 8-MLP (5x6) PowerWDFN package provides superior thermal characteristics through a larger package footprint and exposed thermal pad design. The FDMS3672 is rated for 78W power dissipation at case temperature (Tc) compared to the FDS3170N7's 3W at ambient temperature (Ta), indicating significantly improved thermal management capability.

Q: Are there any gate drive circuit modifications required when substituting the FDMS3672 for the FDS3170N7?

A: The lower gate charge of the FDMS3672 (44 nC versus 77 nC) may allow gate drive circuit optimization but does not require modification. Existing gate drive circuits designed for the FDS3170N7 will operate with the FDMS3672, though the reduced gate charge may improve overall circuit efficiency.

Q: What is the supply status difference between these two parts?

A: The FDS3170N7 is obsolete with no ongoing production. The FDMS3672 is an active product with 10,165 units currently in stock, providing assured long-term availability and supply chain continuity.

Q: Do both parts meet current environmental compliance standards?

A: The FDMS3672 is RoHS3 compliant and meets current environmental regulations. Both devices maintain REACH Unaffected status, indicating no restricted substances of concern under REACH regulations.