FDR838P Equivalent & Substitute Parts

Part Overview

The FDR838P is a P-Channel MOSFET manufactured by onsemi, rated for 20V drain-to-source voltage with 8A continuous drain current at 25°C. This device is housed in a SuperSOT™-8 surface mount package and is designed for applications requiring low on-resistance switching performance. The FDR838P is classified as obsolete, making identification of functionally equivalent substitute components necessary for ongoing design support and procurement continuity.

Substiute Parts

FDR838P

onsemiIn Stock: 78246FDR838P Datasheet

Current PartRFQ

FDS6375

onsemiIn Stock: 80400FDS6375 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the FDR838P is determined by electrical parameter equivalence across the following critical specifications:

Electrical Matching Criteria:

• FET Type: P-Channel topology
• Drain to Source Voltage (Vdss): 20V minimum rating
• Continuous Drain Current (Id): 8A at 25°C
• Gate Threshold Voltage (Vgs(th)): 1.5V maximum at 250µA
• Maximum Gate Voltage (Vgs): ±8V
• On-Resistance (Rds On): Performance within acceptable operating range at specified gate drive voltage

Mechanical Compatibility Criteria:

• Surface mount technology
• Package footprint compatibility with application PCB layout

The FDS6375 qualifies as a direct electrical substitute based on matching P-Channel topology, 20V Vdss rating, 8A continuous drain current, identical gate threshold voltage specification, and compatible gate voltage ratings. Both devices operate within the same electrical parameter envelope for switching applications.

Parameter Comparison

Engineering Selection Recommendations

FDS6375 as Primary Substitute:

The FDS6375 is an active product from onsemi and serves as the direct electrical equivalent to the obsolete FDR838P. Both devices share identical P-Channel topology, 20V Vdss rating, 8A continuous drain current capability, and matching gate threshold voltage specifications. The FDS6375 demonstrates superior performance characteristics in several areas: lower gate charge (36 nC versus 45 nC), reduced input capacitance (2694 pF versus 3300 pF), and higher maximum power dissipation rating (2.5W versus 1.8W). The FDS6375 also supports an extended operating temperature range to 175°C compared to 150°C for the FDR838P.

Package Consideration:

The primary design consideration for substitution involves package footprint compatibility. The FDR838P uses an 8-LSOP package (0.130" width), while the FDS6375 uses an 8-SOIC package (0.154" width). PCB layout modifications are required if the FDS6375 is selected as a replacement. Both packages maintain identical pin count and electrical connectivity.

Compliance Status:

Both the FDR838P and FDS6375 carry REACH Unaffected status and MSL Level 1 (Unlimited) moisture sensitivity rating, ensuring equivalent regulatory compliance for applications requiring these certifications.

Frequently Asked Questions (FAQ)

Q: Can the FDS6375 directly replace the FDR838P without circuit modifications?

A: The FDS6375 provides electrical equivalence and can replace the FDR838P functionally. However, package footprint differences require PCB layout modifications. The 8-SOIC package (0.154" width) is larger than the 8-LSOP package (0.130" width) used by the FDR838P. Pin connectivity and electrical performance are compatible.

Q: What are the key electrical differences between these two devices?

A: The FDS6375 exhibits lower on-resistance performance at the specified gate drive voltage (24 mOhm versus 17 mOhm at 8A, 4.5V). The FDS6375 also features reduced gate charge (36 nC versus 45 nC) and lower input capacitance (2694 pF versus 3300 pF), resulting in faster switching characteristics. The FDS6375 supports higher power dissipation (2.5W versus 1.8W) and extended temperature operation to 175°C.

Q: Why is the FDR838P classified as obsolete?

A: The FDR838P is listed as an obsolete product, indicating it is no longer in active production. The FDS6375, classified as active, represents the current production equivalent from onsemi for this device category.

Q: Are there any thermal performance differences between these devices?

A: The FDS6375 supports a higher maximum power dissipation rating (2.5W versus 1.8W) and an extended operating temperature range (-55°C to 175°C versus -55°C to 150°C). These characteristics provide improved thermal headroom in applications with elevated ambient temperatures or higher power dissipation requirements.

Q: What is the impact of different gate charge specifications?

A: The FDS6375 requires lower gate charge (36 nC versus 45 nC at 4.5V gate drive). This results in reduced gate drive current requirements and faster switching transitions, potentially improving overall circuit efficiency and reducing electromagnetic interference in switching applications.

Q: Are moisture sensitivity and regulatory compliance identical?

A: Both devices carry identical MSL Level 1 (Unlimited) moisture sensitivity ratings and REACH Unaffected status, ensuring equivalent handling requirements and regulatory compliance for applications requiring these certifications.