FDR8308P MOSFET Equivalent & Substitute Parts

Part Overview

The FDR8308P is a dual P-channel MOSFET array manufactured by onsemi, designed for surface mount applications requiring logic level gate switching at 20V with 3.2A continuous drain current capability. This component is classified as obsolete, necessitating identification of functionally equivalent alternatives for new designs and production continuity. The part operates across an industrial temperature range of -55°C to 150°C and is housed in a SuperSOT™-8 package.

Substiute Parts

FDR8308P
onsemiIn Stock: 2410FDR8308P Datasheet
FDR8308P
Current Part
FDC6306P
onsemiIn Stock: 227472FDC6306P Datasheet
FDC6306P
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Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 20 V
Continuous Drain Current (Id) @ 25°C 3.2 A
On-Resistance (Rds On) @ Id, Vgs 50 mOhm @ 3.2A, 4.5V mOhm
Gate Threshold Voltage (Vgs(th)) @ Id 1.5 V @ 250µA
Gate Charge (Qg) @ Vgs 19 nC @ 4.5V
Input Capacitance (Ciss) @ Vds 1240 pF @ 10V
Maximum Power Dissipation 800 mW
Operating Temperature Range -55 to 150 °C (TJ)
Configuration 2 P-Channel (Dual)
Package Type SuperSOT™-8
Technology MOSFET (Metal Oxide)
FET Feature Logic Level Gate

Substitute Part Grouping Explanation

Substitution of the FDR8308P is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

  • Drain to Source Voltage (Vdss): Must equal or exceed 20V
  • Configuration: Must maintain 2 P-Channel (Dual) topology
  • Gate Threshold Voltage (Vgs(th)): Must be compatible at 1.5V @ 250µA for logic level operation
  • Operating Temperature Range: Must support -55°C to 150°C
  • Technology: Must be MOSFET (Metal Oxide) with Logic Level Gate feature

Mechanical Compatibility Criteria:

  • Mounting Type: Surface Mount
  • Series: PowerTrench® technology family

Performance Consideration: The FDC6306P is identified as a substitute part. While this part exhibits reduced continuous drain current (1.9A versus 3.2A) and increased on-resistance (170 mOhm versus 50 mOhm), it maintains electrical compatibility across voltage ratings, gate threshold characteristics, and temperature operating range. The FDC6306P is an active product with current manufacturing status and ROHS3 compliance, providing supply chain continuity advantages.

Parameter Comparison

Parameter FDR8308P (Main) FDC6306P (Substitute) Unit
Manufacturer onsemi onsemi
Category Transistors, FETs, MOSFETs Transistors, FETs, MOSFETs
Configuration 2 P-Channel (Dual) 2 P-Channel (Dual)
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 20 20 V
Continuous Drain Current (Id) @ 25°C 3.2 1.9 A
On-Resistance (Rds On) @ Id, Vgs 50 mOhm @ 3.2A, 4.5V 170 mOhm @ 1.9A, 4.5V mOhm
Gate Threshold Voltage (Vgs(th)) @ Id 1.5 @ 250µA 1.5 @ 250µA V
Gate Charge (Qg) @ Vgs 19 @ 4.5V 4.2 @ 4.5V nC
Input Capacitance (Ciss) @ Vds 1240 @ 10V 441 @ 10V pF
Maximum Power Dissipation 800 700 mW
Operating Temperature Range -55 to 150 -55 to 150 °C (TJ)
Mounting Type Surface Mount Surface Mount
Series PowerTrench® PowerTrench®
Product Status Obsolete Active
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected
ECCN EAR99 EAR99
HTSUS 8541.21.0095 8541.21.0095

Engineering Selection Recommendations

FDC6306P Substitution Suitability:

The FDC6306P is suitable as a substitute for the FDR8308P in applications where the reduced current rating (1.9A versus 3.2A) and increased on-resistance (170 mOhm versus 50 mOhm) are acceptable within circuit design margins. Both parts maintain identical voltage ratings (20V Vdss), gate threshold characteristics (1.5V @ 250µA), and operating temperature range (-55°C to 150°C).

Compliance and Supply Chain Advantages:

The FDC6306P holds active product status with ROHS3 compliance certification, providing long-term supply chain availability and regulatory alignment. The FDR8308P, classified as obsolete, presents supply continuity risk. Both parts maintain REACH Unaffected status and EAR99 export classification.

Package Consideration:

The FDC6306P utilizes a SuperSOT™-6 package (SOT-23-6 Thin, TSOT-23-6) versus the FDR8308P SuperSOT™-8 package. This represents a physical package change requiring PCB layout modification and potential thermal management reassessment due to reduced power dissipation capability (700 mW versus 800 mW).

Frequently Asked Questions (FAQ)

Q: Can the FDC6306P directly replace the FDR8308P without circuit modification?

A: Direct replacement requires circuit analysis. While both parts share identical voltage ratings (20V Vdss) and gate threshold characteristics (1.5V @ 250µA), the FDC6306P exhibits lower continuous drain current (1.9A versus 3.2A) and higher on-resistance (170 mOhm versus 50 mOhm). Applications operating at or near 3.2A continuous current require design review to confirm operation within FDC6306P current limits.

Q: What are the package differences between FDR8308P and FDC6306P?

A: The FDR8308P uses an 8-pin SuperSOT™-8 package (0.130", 3.30mm width), while the FDC6306P uses a 6-pin SuperSOT™-6 package (SOT-23-6 Thin, TSOT-23-6). This difference requires PCB layout redesign and may affect thermal performance due to reduced package size and lower power dissipation rating (700 mW versus 800 mW).

Q: Are both parts compliant with current regulatory requirements?

A: Both the FDR8308P and FDC6306P maintain REACH Unaffected status and EAR99 export classification. The FDC6306P additionally holds ROHS3 compliance certification. The FDR8308P does not specify ROHS status in provided documentation.

Q: What is the significance of the FDC6306P being an active product versus the FDR8308P being obsolete?

A: Active product status indicates current manufacturing and long-term supply availability. The FDR8308P obsolete classification indicates discontinued production, creating supply risk and potential cost escalation. The FDC6306P provides supply chain continuity for new designs and ongoing production requirements.

Q: How do the gate charge and input capacitance differences affect circuit performance?

A: The FDC6306P exhibits lower gate charge (4.2 nC versus 19 nC @ 4.5V) and lower input capacitance (441 pF versus 1240 pF @ 10V). These reductions result in faster switching characteristics and reduced gate drive power requirements, potentially improving circuit efficiency and switching speed.

Q: What thermal considerations apply when substituting these parts?

A: The FDC6306P maximum power dissipation is 700 mW versus 800 mW for the FDR8308P. Applications operating near maximum power dissipation limits require thermal analysis to confirm adequate heat dissipation with the reduced power rating and smaller package footprint.

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