FDPF8N50NZ Equivalent & Substitute Parts

Part Overview

The FDPF8N50NZ is an N-Channel MOSFET manufactured by onsemi, rated for 500V drain-to-source voltage with 8A continuous drain current at 25°C. This device is packaged in a Through Hole TO-220F-3 configuration and is designed for high-voltage switching applications. The part is classified as Obsolete, necessitating identification of equivalent alternatives for ongoing design requirements and production continuity. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, and thermal characteristics while accommodating available packaging options.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	8	A
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	850 mOhm @ 4A, 10V	mOhm
Gate Threshold Voltage (Vgs(th)) @ Id	5	V @ 250µA
Gate Charge (Qg) @ Vgs	18	nC @ 10V
Maximum Gate Voltage (Vgs)	±25	V
Input Capacitance (Ciss) @ Vds	735	pF @ 25V
Power Dissipation (Max)	40.3	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole	-
Package	TO-220-3	-
FET Type	N-Channel	-
Technology	MOSFET (Metal Oxide)	-

Substitute Part Grouping Explanation

Substitution eligibility for the FDPF8N50NZ is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 500V (exact match required)
Continuous Drain Current (Id): 8A minimum at 25°C
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package Family: TO-220 variants

Secondary Compatibility Parameters:

Drive Voltage: 10V (Max Rds On specification)
Gate Threshold Voltage: Within ±1V of 5V @ 250µA
Operating Temperature: Minimum -55°C to 150°C range
RoHS Compliance: ROHS3 Compliant

The identified substitute parts meet these criteria while accommodating minor variations in gate charge, input capacitance, and power dissipation within acceptable operational margins for high-voltage switching applications.

Parameter Comparison

Parameter	FDPF8N50NZ (Main)	R5009ANX	TK8A50D(STA4,Q,M)	Unit
Manufacturer	onsemi	Rohm Semiconductor	Toshiba Semiconductor and Storage	-
Drain to Source Voltage (Vdss)	500	500	500	V
Continuous Drain Current (Id) @ 25°C	8	9	8	A
Drive Voltage (Max Rds On)	10	10	10	V
Rds On (Max) @ Id, Vgs	850 @ 4A, 10V	720 @ 4.5A, 10V	850 @ 4A, 10V	mOhm
Gate Threshold Voltage (Vgs(th)) @ Id	5 @ 250µA	4.5 @ 1mA	4 @ 1mA	V
Gate Charge (Qg) @ Vgs	18 @ 10V	21 @ 10V	16 @ 10V	nC
Maximum Gate Voltage (Vgs)	±25	±30	±30	V
Input Capacitance (Ciss) @ Vds	735 @ 25V	650 @ 25V	800 @ 25V	pF
Power Dissipation (Max)	40.3	50	40	W
Operating Temperature Range	-55 to 150	-55 to 150	-55 to 150	°C
Mounting Type	Through Hole	Through Hole	Through Hole	-
Package	TO-220F-3	TO-220FM	TO-220SIS	-
Product Status	Obsolete	Not For New Designs	Active	-
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	-

Engineering Selection Recommendations

R5009ANX (Rohm Semiconductor)

The R5009ANX meets all primary substitution criteria with 500V Vdss and 9A continuous drain current, exceeding the 8A requirement of the FDPF8N50NZ. This part demonstrates improved on-resistance characteristics (720 mOhm vs. 850 mOhm) and higher power dissipation capability (50W vs. 40.3W). The device is ROHS3 compliant and maintains the required operating temperature range. However, the R5009ANX carries a "Not For New Designs" status, limiting its suitability for long-term production applications. The TO-220FM package is mechanically compatible with TO-220-3 footprints in Through Hole mounting configurations.

TK8A50D(STA4,Q,M) (Toshiba Semiconductor and Storage)

The TK8A50D(STA4,Q,M) provides direct electrical equivalence to the FDPF8N50NZ with matching 500V Vdss and 8A continuous drain current specifications. This device maintains identical on-resistance characteristics (850 mOhm @ 4A, 10V) and comparable power dissipation (40W vs. 40.3W). The TK8A50D carries an Active product status, supporting ongoing design and production requirements. ROHS3 compliance and the full operating temperature range (-55°C to 150°C) are maintained. The TO-220SIS package is mechanically compatible with TO-220-3 footprints. Gate charge is reduced to 16 nC, providing improved switching performance characteristics.

For applications requiring long-term component availability and production continuity, the TK8A50D(STA4,Q,M) is the preferred substitute due to its Active status and equivalent electrical performance.

Frequently Asked Questions (FAQ)

Q: Can the R5009ANX be used as a direct replacement for the FDPF8N50NZ?

A: The R5009ANX meets the electrical substitution criteria with 500V Vdss and 9A continuous drain current. The TO-220FM package is mechanically compatible with TO-220-3 footprints. However, the "Not For New Designs" status indicates this part is not recommended for new production applications. Existing designs using the FDPF8N50NZ can accommodate the R5009ANX in legacy support scenarios.

Q: What are the key differences between the TK8A50D and the FDPF8N50NZ?

A: Both devices share identical voltage and current ratings (500V, 8A) and on-resistance specifications (850 mOhm @ 4A, 10V). The TK8A50D features reduced gate charge (16 nC vs. 18 nC), slightly lower power dissipation (40W vs. 40.3W), and carries an Active product status. The TO-220SIS package is mechanically compatible with TO-220-3 mounting. These differences do not affect functional equivalence in high-voltage switching applications.

Q: Are the TO-220F-3, TO-220FM, and TO-220SIS packages interchangeable?

A: All three package variants are Through Hole TO-220 family members with compatible pin configurations and PCB footprints. The mechanical and electrical interfaces are equivalent for standard TO-220-3 circuit board layouts. Pin assignment and lead spacing conform to industry standards for this package family.

Q: What is the significance of the "Obsolete" and "Not For New Designs" product statuses?

A: The FDPF8N50NZ is classified as Obsolete, indicating onsemi has discontinued production and support. The R5009ANX carries "Not For New Designs" status, signifying Rohm Semiconductor does not recommend this part for new product development. The TK8A50D(STA4,Q,M) is classified as Active, confirming Toshiba continues production and provides full technical support. For new designs, the TK8A50D is the appropriate selection.

Q: Do all substitute parts maintain ROHS3 compliance?

A: Yes. The FDPF8N50NZ, R5009ANX, and TK8A50D(STA4,Q,M) are all ROHS3 compliant, meeting environmental and regulatory requirements for electronic component manufacturing and use.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The FDPF8N50NZ requires 18 nC, the R5009ANX requires 21 nC, and the TK8A50D requires 16 nC. Lower gate charge reduces switching losses and improves efficiency. The TK8A50D's 16 nC specification provides marginal performance improvement over the original part. These differences are within acceptable operational margins for high-voltage switching applications and do not require circuit redesign.

Q: What is the impact of input capacitance variations among substitute parts?

A: Input capacitance (Ciss) affects switching speed and gate drive requirements. The FDPF8N50NZ specifies 735 pF, the R5009ANX specifies 650 pF, and the TK8A50D specifies 800 pF. These variations are minor and do not necessitate gate driver circuit modifications. Standard gate drive circuits accommodate this range of input capacitance values without performance degradation.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message