FDPF7N50U-G N-Channel MOSFET 500V 5A Equivalent & Substitute Parts

Part Overview

The FDPF7N50U-G is an N-Channel MOSFET manufactured by onsemi, rated for 500V drain-to-source voltage and 5A continuous drain current in a Through Hole TO-220F-3 package. This device is classified as Obsolete, making identification of equivalent and substitute parts necessary for ongoing design support and procurement continuity. The part belongs to the UltraFRFET™ and Unifet™ series and is RoHS3 compliant.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	5	A
Rds On (Max) @ 2.5A, 10V	1.5	Ohm
Gate Threshold Voltage (Vgs(th)) @ 250µA	5	V
Gate Charge (Qg) @ 10V	16.6	nC
Input Capacitance (Ciss) @ 25V	940	pF
Power Dissipation (Max)	31.3	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole	-
Package	TO-220-3	-

Substitute Part Grouping Explanation

Substitution of the FDPF7N50U-G is determined by the following critical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 500V minimum
Continuous Drain Current (Id): 5A minimum at 25°C
Mounting Type: Through Hole
Package Type: TO-220 family
FET Technology: N-Channel MOSFET (Metal Oxide)

Secondary Compatibility Parameters:

Gate Drive Voltage: 10V
Rds On characteristics at specified current and voltage
Gate threshold voltage range
Operating temperature range: -55°C to 150°C minimum
Power dissipation capability

Substitute parts are grouped into two categories:

Direct Substitutes (Functionally Equivalent): Parts meeting or exceeding all primary criteria with comparable secondary parameters, allowing direct replacement without circuit modification.

Similar Substitutes (Application-Dependent): Parts with variations in one or more parameters that may require circuit evaluation before implementation.

Parameter Comparison

Parameter	FDPF7N50U-G (Main)	2SK3199	TK5A45DA(STA4,Q,M)	R5007FNX	TK6A55DA(STA4,Q,M)
Manufacturer	onsemi	Sanken Electric USA Inc.	Toshiba Semiconductor	Rohm Semiconductor	Toshiba Semiconductor
Vdss (V)	500	500	450	500	550
Id @ 25°C (A)	5	5	4.5	7	5.5
Rds On (Max) @ 10V (Ohm)	1.5 @ 2.5A	1.5 @ 2.5A	1.75 @ 2.3A	1.3 @ 3.5A	1.48 @ 2.8A
Vgs(th) (Max) (V)	5 @ 250µA	4 @ 1mA	4.4 @ 1mA	4 @ 1mA	4.4 @ 1mA
Gate Charge (Qg) @ 10V (nC)	16.6	-	9	15	12
Ciss @ 25V (pF)	940	650	380	450	600
Power Dissipation (Max) (W)	31.3	30	30	40	35
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Product Status	Obsolete	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	RoHS Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

2SK3199 (Sanken Electric USA Inc.) - Direct Substitute

The 2SK3199 is the primary equivalent for the FDPF7N50U-G. It matches the 500V voltage rating and 5A current rating with identical Rds On characteristics at 10V gate drive. The part is Active status with RoHS compliance and TO-220-3 package compatibility. Input capacitance is lower (650 pF vs. 940 pF), which may improve switching performance. This part is suitable for direct replacement in existing designs.

R5007FNX (Rohm Semiconductor) - Direct Substitute with Enhanced Performance

The R5007FNX exceeds the FDPF7N50U-G specifications with 7A continuous drain current and 40W power dissipation capability, while maintaining 500V voltage rating and TO-220-3 package. Rds On is lower (1.3 Ohm @ 3.5A), providing improved efficiency. Gate charge is comparable (15 nC). This part is Active status and ROHS3 compliant. The higher current rating provides design margin for applications requiring increased headroom.

TK6A55DA(STA4,Q,M) (Toshiba Semiconductor) - Similar Substitute

The TK6A55DA offers 550V voltage rating and 5.5A current rating, exceeding the FDPF7N50U-G in both parameters. Rds On is comparable (1.48 Ohm @ 2.8A). Gate charge is lower (12 nC), and input capacitance is reduced (600 pF). The part is Active status, ROHS3 compliant, and uses TO-220SIS package variant. The higher voltage rating provides additional design margin for transient voltage conditions.

TK5A45DA(STA4,Q,M) (Toshiba Semiconductor) - Similar Substitute with Reduced Ratings

The TK5A45DA has reduced voltage (450V) and current (4.5A) ratings compared to the FDPF7N50U-G. Gate charge is significantly lower (9 nC), and input capacitance is reduced (380 pF), enabling faster switching. This part is suitable only for applications where the lower voltage and current ratings are acceptable. Active status and ROHS3 compliant.

IXBH24N170 (IXYS) - Not Recommended as Direct Substitute

The IXBH24N170 is an IGBT device with fundamentally different technology (IGBT vs. MOSFET), voltage rating (1700V), and current rating (60A). Although listed in the original substitute list, this part is not functionally equivalent and requires different gate drive circuitry and application design. This part is excluded from direct substitution consideration.

Frequently Asked Questions (FAQ)

Q: Can the 2SK3199 be used as a direct replacement for the FDPF7N50U-G?

A: Yes. The 2SK3199 matches the critical electrical parameters (500V, 5A, 1.5 Ohm Rds On @ 10V) and package type (TO-220-3). Both parts are N-Channel MOSFETs with compatible gate drive requirements. The 2SK3199 is Active status, ensuring long-term availability.

Q: What is the difference between the TO-220F and TO-220SIS package variants?

A: Both are Through Hole TO-220 family packages with three leads (Gate, Drain, Source). The TO-220F and TO-220SIS designations indicate manufacturer-specific package variants. Pin configuration and thermal characteristics are compatible for the listed parts. Physical dimensions may vary slightly; consult specific datasheets for mechanical fit verification.

Q: Why does the R5007FNX have lower Rds On than the FDPF7N50U-G?

A: The R5007FNX is rated for 7A continuous drain current compared to 5A for the FDPF7N50U-G. Lower Rds On (1.3 Ohm vs. 1.5 Ohm) is a characteristic of higher-current-rated devices using larger die geometry. This results in improved efficiency and reduced power dissipation in switching applications.

Q: Can the TK5A45DA be used in place of the FDPF7N50U-G?

A: The TK5A45DA has reduced voltage (450V) and current (4.5A) ratings. Substitution is only acceptable if the application operates below these reduced limits. The lower gate charge and input capacitance may improve switching speed. Circuit evaluation is required to confirm compatibility.

Q: What does "Active" product status mean for substitute parts?

A: Active status indicates the manufacturer currently produces and supports the part. This ensures availability for procurement, technical support, and long-term supply continuity. The FDPF7N50U-G is Obsolete, making Active substitute parts essential for design continuity.

Q: Are all listed substitute parts RoHS compliant?

A: Yes. All substitute parts listed are either RoHS Compliant or ROHS3 Compliant, matching the environmental compliance requirements of the FDPF7N50U-G. All parts are EAR99 classified and REACH Unaffected.

Q: How does gate charge affect circuit design?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Lower gate charge (TK5A45DA at 9 nC) enables faster switching and reduced gate drive power. Higher gate charge (FDPF7N50U-G at 16.6 nC) requires more robust gate drive circuitry. Substitute parts with different gate charge values may require gate drive circuit adjustment.

Q: What is input capacitance (Ciss) and why does it vary among substitutes?

A: Input capacitance is the capacitance seen at the gate terminal and affects switching speed and gate drive requirements. Lower Ciss (TK5A45DA at 380 pF) enables faster switching transitions. Higher Ciss (FDPF7N50U-G at 940 pF) requires more gate charge and may slow switching. Substitute parts with significantly different Ciss values may require gate drive circuit optimization.

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