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FDPF79N15 Equivalent & Substitute Parts
Part Overview
The FDPF79N15 is an N-Channel MOSFET manufactured by onsemi, rated for 150V drain-to-source voltage with 79A continuous drain current in a Through Hole TO-220F-3 package. This device is part of the UniFET™ series and is classified as obsolete. Due to its obsolete status, identifying equivalent substitute components is necessary to maintain design continuity and ensure component availability for production and repair applications.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain (Id) @ 25°C | 79A (Tc) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 39.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 73 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 3410 pF @ 25 V |
| Power Dissipation (Max) | 38W (Tc) |
| Operating Temperature Range | -55°C ~ 150°C (TJ) |
| Package Type | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
Substitute Part Grouping Explanation
Substitution of the FDPF79N15 is determined by the following critical electrical and mechanical parameters:
Voltage Rating Compatibility: The substitute part must maintain the 150V Vdss rating to ensure safe operation within the same voltage domain.
Current Handling Capability: The substitute must support the 79A continuous drain current specification at the same or lower junction temperature conditions.
On-State Resistance (Rds On): The substitute's Rds On value must not exceed the original specification to prevent excessive power dissipation and thermal stress in the application circuit.
Gate Charge and Input Capacitance: These parameters affect switching speed and gate drive requirements. Substitutes with comparable or lower values maintain circuit performance characteristics.
Gate Voltage Rating (Vgs Max): The substitute must support the gate voltage range of the original device to ensure compatibility with existing gate drive circuits.
Package and Mounting: The substitute must use the same Through Hole TO-220 package family to ensure mechanical and thermal interface compatibility with the PCB layout.
Operating Temperature Range: The substitute must cover the original operating temperature range to maintain reliability across all specified conditions.
The FDP2532 meets these substitution criteria as an active, in-stock alternative from the same manufacturer.
Parameter Comparison
| Parameter | FDPF79N15 | FDP2532 | Notes |
|---|---|---|---|
| Manufacturer | onsemi | onsemi | Same manufacturer |
| FET Type | N-Channel | N-Channel | Identical topology |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | Same technology |
| Drain to Source Voltage (Vdss) | 150 V | 150 V | Matched rating |
| Current - Continuous Drain (Id) @ 25°C | 79A (Tc) | 79A (Tc) | Matched specification |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 39.5A, 10V | 16mOhm @ 33A, 10V | FDP2532 has lower Rds On |
| Vgs(th) (Max) @ Id | 5V @ 250µA | 4V @ 250µA | FDP2532 has lower threshold |
| Gate Charge (Qg) (Max) @ Vgs | 73 nC @ 10 V | 107 nC @ 10 V | FDP2532 has higher gate charge |
| Vgs (Max) | ±30V | ±20V | FDP2532 has lower gate voltage rating |
| Input Capacitance (Ciss) (Max) @ Vds | 3410 pF @ 25 V | 5870 pF @ 25 V | FDP2532 has higher input capacitance |
| Power Dissipation (Max) | 38W (Tc) | 310W (Tc) | FDP2532 has significantly higher rating |
| Operating Temperature Range | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | FDP2532 extends upper limit |
| Mounting Type | Through Hole | Through Hole | Same mounting |
| Package / Case | TO-220-3 Full Pack | TO-220-3 | Compatible package family |
| Product Status | Obsolete | Active | FDP2532 is currently in production |
Engineering Selection Recommendations
The FDP2532 is a direct substitute for the obsolete FDPF79N15 based on the following engineering criteria:
Voltage and Current Ratings: Both devices share identical 150V Vdss and 79A continuous drain current specifications, ensuring functional equivalence in the primary electrical domain.
Package Compatibility: Both devices use Through Hole TO-220-3 packages, maintaining mechanical and thermal interface compatibility with existing PCB designs.
Product Status and Availability: The FDPF79N15 is obsolete, while the FDP2532 is active and in production. This transition ensures long-term component availability and supply chain continuity.
Compliance and Certifications: The FDP2532 carries RoHS3 compliance and REACH Unaffected status, meeting modern regulatory requirements. Both devices are classified as EAR99 and share the same HTSUS code.
Performance Enhancements: The FDP2532 offers improved on-state resistance (16mOhm versus 30mOhm), lower gate threshold voltage (4V versus 5V), and extended operating temperature range (-55°C to 175°C versus -55°C to 150°C). These characteristics provide superior thermal performance and wider operational flexibility.
Design Considerations: The FDP2532 exhibits higher gate charge (107nC versus 73nC) and input capacitance (5870pF versus 3410pF), requiring gate drive circuits capable of handling these increased capacitive loads. The lower Vgs Max rating (±20V versus ±30V) must be verified against existing gate drive voltage levels.
Frequently Asked Questions (FAQ)
Q: Can the FDP2532 be used as a direct replacement for the FDPF79N15 in existing designs?
A: Yes, the FDP2532 is a direct substitute. Both devices share identical voltage (150V) and current (79A) ratings, use compatible TO-220-3 packages, and are manufactured by onsemi. However, gate drive circuits must accommodate the FDP2532's higher gate charge (107nC) and lower maximum gate voltage (±20V).
Q: What are the key electrical differences between these two devices?
A: The FDP2532 provides superior on-state resistance (16mOhm versus 30mOhm), resulting in lower conduction losses. It also features a lower gate threshold voltage (4V versus 5V) and extended operating temperature range (175°C versus 150°C). The trade-offs include higher gate charge and input capacitance, requiring more robust gate drive capability.
Q: Are there any package differences between the FDPF79N15 and FDP2532?
A: Both devices use Through Hole TO-220-3 packages. The FDPF79N15 is specified as TO-220F-3 (Full Pack), while the FDP2532 is specified as TO-220-3. These designations refer to the same physical package family and are mechanically and thermally compatible.
Q: What is the significance of the FDPF79N15 being obsolete?
A: Obsolete status indicates the FDPF79N15 is no longer manufactured and existing inventory is limited. The FDP2532, classified as active, is currently in production with 15,165 pieces in stock, ensuring reliable long-term availability for new designs and production runs.
Q: How does the higher gate charge of the FDP2532 affect circuit design?
A: Higher gate charge (107nC versus 73nC) requires the gate drive circuit to supply more charge per switching cycle, increasing gate drive power dissipation and potentially requiring a higher-current gate driver IC. Existing gate drive circuits must be evaluated for compatibility with this increased charge requirement.
Q: Is the lower Vgs Max rating of the FDP2532 a limitation?
A: The FDP2532's Vgs Max of ±20V (versus ±30V for the FDPF79N15) is a constraint only if the existing gate drive circuit applies voltages exceeding ±20V. Most standard gate drive circuits operate within ±15V, making this specification compatible with typical applications. Verify gate drive voltage levels before substitution.
Q: What compliance advantages does the FDP2532 offer?
A: The FDP2532 is RoHS3 compliant and REACH Unaffected, meeting current environmental and regulatory standards. The FDPF79N15, being obsolete, may not meet modern compliance requirements for new product certifications.
Q: Can thermal performance be improved by using the FDP2532?
A: Yes. The FDP2532's lower on-state resistance (16mOhm versus 30mOhm) reduces conduction losses, resulting in lower junction temperatures during operation. The extended operating temperature range (-55°C to 175°C) also provides additional thermal margin in high-temperature applications.
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