FDPF680N10T Equivalent & Substitute Parts

Part Overview

The FDPF680N10T is an N-Channel MOSFET manufactured by onsemi, rated for 100V drain-to-source voltage with 12A continuous drain current at 25°C. This device features the PowerTrench® technology platform and is housed in a TO-220F-3 through-hole package. The part is currently classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design support and procurement requirements.

Substiute Parts

FDPF680N10T

onsemiIn Stock: 1595FDPF680N10T Datasheet

Current PartRFQ

FDPF3860T

onsemiIn Stock: 6443FDPF3860T Datasheet

MFR RecommendedRFQ

IRFI530NPBF

Infineon TechnologiesIn Stock: 2295IRFI530NPBF Datasheet

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IRFI540NPBF

Infineon TechnologiesIn Stock: 15255IRFI540NPBF Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the FDPF680N10T is determined by the following critical parameters: drain-to-source voltage rating (Vdss), continuous drain current capability (Id), on-state resistance (Rds On), gate threshold voltage (Vgs(th)), and package compatibility. All substitute parts must maintain the 100V Vdss rating and support equivalent or higher current ratings to ensure functional compatibility in the original application circuit.

The FDPF680N10T accepts substitutes in two categories:

Direct Manufacturer Upgrade (onsemi): The FDPF3860T provides the same voltage rating and package type with enhanced current handling (20A vs. 12A) and improved on-state resistance characteristics.

Cross-Manufacturer Alternatives (Infineon Technologies): The IRFI530NPBF and IRFI540NPBF are HEXFET® series devices that maintain the 100V voltage rating and equivalent current specifications. These parts use the TO-220AB Full-Pak package variant, which is mechanically and electrically compatible with TO-220-3 applications.

Parameter Comparison

Engineering Selection Recommendations

FDPF3860T (onsemi): This part is the manufacturer-recommended upgrade path for the obsolete FDPF680N10T. Both devices share identical voltage ratings, the same PowerTrench® technology platform, and compatible TO-220F-3 packaging. The FDPF3860T maintains active product status and ROHS3 compliance. The increased current rating (20A vs. 12A) and improved on-state resistance provide enhanced performance margins without requiring circuit redesign. This substitute is suitable for direct replacement in applications where the original 12A specification is adequate.

IRFI530NPBF (Infineon Technologies): This HEXFET® device matches the FDPF680N10T in both voltage rating and continuous drain current (12A). The part maintains active product status and ROHS3 compliance. The TO-220AB Full-Pak package is mechanically and electrically compatible with TO-220-3 applications. The higher gate charge (44 nC vs. 17 nC) and on-state resistance (110 mOhm vs. 68 mOhm) represent performance trade-offs that may affect switching speed and thermal characteristics in the application circuit.

IRFI540NPBF (Infineon Technologies): This HEXFET® device provides the highest current rating (20A) among available substitutes while maintaining the 100V voltage specification. The part is active and ROHS3 compliant. The TO-220AB Full-Pak package is compatible with TO-220-3 footprints. The significantly higher gate charge (94 nC) and power dissipation rating (54W) indicate this part is optimized for higher-current applications and may introduce switching performance changes.

All three substitute parts are RoHS3 compliant and REACH unaffected, meeting regulatory requirements equivalent to the original FDPF680N10T.

Frequently Asked Questions (FAQ)

Q: Can the FDPF3860T directly replace the FDPF680N10T without circuit modifications?

A: Yes. Both parts share identical voltage ratings (100V), compatible package types (TO-220F-3), and the same technology platform (PowerTrench®). The FDPF3860T's higher current rating (20A vs. 12A) and improved on-state resistance provide enhanced performance without requiring design changes.

Q: What are the key differences between the onsemi FDPF3860T and the Infineon IRFI540NPBF?

A: Both parts support 100V and 20A specifications. The FDPF3860T uses TO-220F-3 packaging and has lower gate charge (35 nC vs. 94 nC), resulting in faster switching characteristics. The IRFI540NPBF uses TO-220AB Full-Pak packaging and has higher power dissipation rating (54W vs. 33.8W), making it suitable for applications with higher thermal demands.

Q: Are TO-220F-3 and TO-220AB Full-Pak packages interchangeable?

A: Both packages are TO-220-3 variants with compatible pin configurations and through-hole mounting. They are mechanically and electrically interchangeable in standard PCB layouts. Verify specific mechanical clearance requirements for your application.

Q: Why does the IRFI530NPBF have higher on-state resistance than the FDPF680N10T despite matching current ratings?

A: The IRFI530NPBF is from the HEXFET® series with different die technology and optimization criteria. The 110 mOhm on-state resistance (vs. 68 mOhm) reflects different performance trade-offs in the device design. This may result in higher power dissipation in switching applications.

Q: What is the impact of higher gate charge on circuit performance?

A: Gate charge directly affects switching speed and driver circuit requirements. The IRFI540NPBF (94 nC) requires more gate charge than the FDPF680N10T (17 nC), potentially requiring higher driver current or longer switching times. Verify driver circuit compatibility before substitution.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. The FDPF3860T, IRFI530NPBF, and IRFI540NPBF are all RoHS3 compliant and REACH unaffected, meeting regulatory requirements equivalent to the original FDPF680N10T.

Q: Which substitute part is recommended for new designs?

A: The FDPF3860T is recommended for new designs as it maintains the same manufacturer (onsemi), technology platform (PowerTrench®), and package type while providing active product status and enhanced performance specifications.