FDPF5N50UT N-Channel MOSFET 500V 4A Equivalent & Substitute Parts

Part Overview

The FDPF5N50UT is an N-Channel MOSFET manufactured by onsemi, rated for 500V drain-to-source voltage with 4A continuous drain current at 25°C. This device is packaged in a Through Hole TO-220F-3 configuration and is designed for high-voltage switching applications. The part is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

Substitute parts must maintain compatibility across critical electrical parameters including voltage rating, current capacity, on-resistance characteristics, and thermal performance, while accommodating the Through Hole mounting requirement.

Substiute Parts

FDPF5N50UT

onsemiIn Stock: 5607FDPF5N50UT Datasheet

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STP4N52K3

STMicroelectronicsIn Stock: 1458STP4N52K3 Datasheet

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TK4A55D(STA4,Q,M)

Toshiba Semiconductor and StorageIn Stock: 725TK4A55D(STA4,Q,M) Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the FDPF5N50UT is determined by the following criteria:

Voltage Rating Compatibility: Substitute parts must have a Drain to Source Voltage (Vdss) rating equal to or greater than 500V. This ensures the device can withstand the same or higher voltage stress in the application circuit.

Current Capacity: Substitute parts must support a continuous drain current (Id) at 25°C equal to or greater than 4A to maintain equivalent current-handling capability.

On-Resistance (Rds On): The maximum on-resistance at specified gate and drain conditions must be comparable to or lower than the main part to ensure similar conduction losses and thermal performance.

Gate Charge (Qg): Gate charge values influence switching speed and driver requirements. Substitute parts with similar or lower gate charge maintain compatible drive characteristics.

Mounting Configuration: All substitute parts must use Through Hole mounting in TO-220 package variants to ensure mechanical and electrical compatibility with existing PCB layouts.

Thermal Performance: Power dissipation ratings and maximum junction temperature must support the thermal requirements of the application.

Compliance Status: RoHS3 compliance and REACH unaffected status are maintained across all qualified substitutes.

Parameter Comparison

Engineering Selection Recommendations

STP4N52K3 (STMicroelectronics): This substitute meets the voltage rating requirement with a 525V Vdss rating. However, the continuous drain current is rated at 2.5A, which is below the 4A requirement of the main part. This device is suitable only for applications where the actual operating current does not exceed 2.5A. The part is in active production status with ROHS3 compliance. Gate charge is lower at 11nC, providing improved switching characteristics. Power dissipation capability is higher at 45W.

TK4A55D(STA4,Q,M) (Toshiba Semiconductor and Storage): This substitute fully meets the electrical requirements with a 550V Vdss rating and 4A continuous drain current matching the main part specification. The on-resistance is superior at 1.88Ohm compared to the main part's 2Ohm. Gate charge is lower at 11nC. Power dissipation is rated at 35W. The device is in active production status with RoHS compliance. The TO-220SIS package is mechanically compatible with TO-220F-3 layouts.

Selection Basis: Both substitutes are in active production, ensuring long-term availability. The TK4A55D(STA4,Q,M) provides the most direct electrical equivalence with matching current capacity and superior on-resistance performance. The STP4N52K3 is suitable for current-limited applications below 2.5A.

Frequently Asked Questions (FAQ)

Q: Can the STP4N52K3 be used as a direct replacement for the FDPF5N50UT in all applications?

A: No. The STP4N52K3 has a maximum continuous drain current of 2.5A, while the FDPF5N50UT is rated for 4A. The STP4N52K3 is suitable only for applications where the actual operating current does not exceed 2.5A at 25°C.

Q: What is the primary advantage of the TK4A55D(STA4,Q,M) as a substitute?

A: The TK4A55D(STA4,Q,M) matches the 4A current rating of the main part and provides a lower on-resistance of 1.88Ohm compared to 2Ohm, resulting in reduced conduction losses. The 550V voltage rating provides additional margin above the 500V requirement.

Q: Are the TO-220F-3, TO-220, and TO-220SIS packages mechanically interchangeable?

A: All three packages are Through Hole TO-220 variants with compatible pin configurations and PCB footprints. They are mechanically interchangeable in standard TO-220 mounting applications.

Q: Do all substitute parts maintain the same operating temperature range?

A: Yes. The FDPF5N50UT, STP4N52K3, and TK4A55D(STA4,Q,M) all support an operating temperature range of -55°C to 150°C (TJ).

Q: What is the significance of the lower gate charge in the substitute parts?

A: Lower gate charge (11nC versus 15nC) reduces the charge that must be supplied by the gate driver circuit, resulting in faster switching transitions and lower driver power consumption.

Q: Are both substitute parts RoHS compliant?

A: Yes. The STP4N52K3 is ROHS3 compliant, and the TK4A55D(STA4,Q,M) is RoHS compliant. Both meet environmental compliance requirements.

Q: Which substitute should be selected for a new design?

A: The TK4A55D(STA4,Q,M) is recommended for new designs requiring full electrical equivalence with the FDPF5N50UT. The STP4N52K3 is suitable for designs where the operating current is confirmed to remain below 2.5A.