FDPF5N50T N-Channel 500V 5A MOSFET Equivalent & Substitute Parts

Part Overview

The FDPF5N50T is an N-Channel MOSFET manufactured by onsemi, rated for 500V drain-to-source voltage with 5A continuous drain current in a Through Hole TO-220F-3 package. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

The FDPF5N50T operates within the high-voltage MOSFET category and is suitable for applications requiring robust switching performance at elevated voltage levels. Due to its obsolete status, alternative components with compatible electrical and mechanical specifications are required for new designs and production continuity.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	5	A
Rds On (Max) @ Id, Vgs	1.4	Ohm @ 2.5A, 10V
Gate Threshold Voltage (Vgs(th)) @ Id	5	V @ 250µA
Gate Charge (Qg) @ Vgs	15	nC @ 10V
Maximum Gate Voltage (Vgs)	±30	V
Input Capacitance (Ciss) @ Vds	640	pF @ 25V
Power Dissipation (Max)	28	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole	-
Package Type	TO-220-3	-
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitution of the FDPF5N50T is determined by alignment across the following critical parameters:

Voltage Rating Compatibility: Substitute parts must maintain a Drain to Source Voltage (Vdss) rating equal to or greater than 500V to ensure safe operation in the original application circuit.

Current Rating Compatibility: Substitute parts must support a continuous drain current (Id) rating equal to or greater than 5A at the specified temperature condition to handle the design load requirements.

On-State Resistance (Rds On): Substitute parts must maintain comparable Rds On values to ensure similar power dissipation and thermal performance. Variations in Rds On directly affect switching losses and heat generation.

Gate Charge (Qg): Substitute parts with similar gate charge values ensure compatible gate drive requirements and switching speed characteristics.

Package and Mounting: All substitute parts utilize Through Hole mounting in TO-220-3 package variants (TO-220F-3, TO-220FL, TO-220SIS), ensuring mechanical and thermal interface compatibility.

Compliance Standards: All substitute parts maintain RoHS3 compliance and EAR99 export classification, matching the regulatory status of the original component.

Parameter Comparison

Parameter	FDPF5N50T (onsemi)	RJK5026DPP-M0#T2 (Renesas)	TK4A53D (Toshiba)	TK5A55D (Toshiba)
Vdss (V)	500	500	525	550
Id @ 25°C (A)	5	6	4	5
Rds On (Max) @ Vgs 10V (Ohm)	1.4 @ 2.5A	1.7 @ 3A	1.7 @ 2A	1.7 @ 2.5A
Gate Charge Qg @ 10V (nC)	15	14	11	11
Vgs (Max) (V)	±30	±30	±30	±30
Input Capacitance Ciss @ 25V (pF)	640	440	490	540
Power Dissipation (Max) (W)	28	28.5	35	35
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-220F-3	TO-220FL	TO-220SIS	TO-220SIS
Product Status	Obsolete	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	RoHS Compliant	ROHS3 Compliant

Engineering Selection Recommendations

RJK5026DPP-M0#T2 (Renesas Electronics Corporation): This substitute provides the closest electrical match to the FDPF5N50T with identical 500V Vdss rating and enhanced current capability at 6A. The device maintains active product status with ROHS3 compliance. The TO-220FL package variant is mechanically compatible with TO-220-3 footprints. This part is suitable for direct replacement in applications where the additional 1A current margin provides design headroom.

TK5A55D(STA4,Q,M) (Toshiba Semiconductor and Storage): This substitute matches the FDPF5N50T in continuous drain current rating at 5A and provides a higher voltage rating of 550V, offering enhanced margin for transient overvoltage conditions. The device maintains active product status with ROHS3 compliance. The TO-220SIS package is mechanically compatible with TO-220-3 footprints. Lower gate charge (11 nC) enables faster switching characteristics compared to the original part.

TK4A53D(STA4,Q,M) (Toshiba Semiconductor and Storage): This substitute provides a 525V Vdss rating with 4A continuous drain current, representing a reduced current capability. The device maintains active product status with RoHS compliance. The TO-220SIS package is mechanically compatible with TO-220-3 footprints. This part is suitable for applications where the 4A current rating is sufficient and the higher power dissipation rating (35W) provides thermal margin.

All three substitute parts maintain the required operating temperature range of -55°C to 150°C and support ±30V gate voltage specifications.

Frequently Asked Questions (FAQ)

Q: Can the RJK5026DPP-M0#T2 be used as a direct replacement for the FDPF5N50T?

A: The RJK5026DPP-M0#T2 is electrically compatible with the FDPF5N50T. Both devices share identical 500V Vdss and ±30V Vgs ratings. The RJK5026DPP-M0#T2 provides 6A continuous drain current compared to 5A in the original part, offering additional current margin. The TO-220FL package is mechanically compatible with TO-220-3 footprints. Verification of gate drive circuit compatibility with the 14 nC gate charge specification is required.

Q: What is the difference between the TO-220F-3, TO-220FL, and TO-220SIS packages?

A: All three package variants are Through Hole TO-220-3 configurations with identical pin assignments and thermal interface characteristics. The primary differences are in package outline dimensions and lead frame design. The TO-220F-3 (onsemi), TO-220FL (Renesas), and TO-220SIS (Toshiba) are mechanically interchangeable on standard TO-220 PCB footprints.

Q: Why does the TK5A55D have a higher Vdss rating than the FDPF5N50T?

A: The TK5A55D is rated for 550V Vdss compared to 500V in the FDPF5N50T. This higher voltage rating provides additional safety margin for transient overvoltage conditions and does not negatively impact compatibility. The device can be used in applications designed for 500V operation without circuit modification.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the amount of charge required to switch the MOSFET on and off. The FDPF5N50T requires 15 nC at 10V, while the TK5A55D and TK4A53D require 11 nC. Lower gate charge enables faster switching transitions and reduces gate drive power consumption. Gate drive circuits must be verified to supply adequate current for the specified gate charge value.

Q: Are all substitute parts RoHS compliant?

A: Yes. The FDPF5N50T is ROHS3 compliant. The RJK5026DPP-M0#T2 and TK5A55D are ROHS3 compliant. The TK4A53D is RoHS compliant. All parts meet the regulatory requirements for lead-free and hazardous substance restrictions.

Q: What is the impact of Rds On variation on thermal performance?

A: The FDPF5N50T specifies 1.4 Ohm Rds On at 2.5A and 10V. The substitute parts specify 1.7 Ohm Rds On at comparable conditions. Higher Rds On increases conduction losses and heat generation. Thermal analysis of the application circuit is required to confirm that the substitute part's power dissipation rating (28.5W to 35W) is adequate for the intended duty cycle.

Q: Can the TK4A53D be used in applications requiring 5A continuous current?

A: The TK4A53D is rated for 4A continuous drain current, which is below the 5A requirement of the FDPF5N50T. This part is not suitable for applications requiring sustained 5A operation. The RJK5026DPP-M0#T2 (6A) or TK5A55D (5A) are appropriate alternatives for 5A applications.

Q: What certifications and compliance standards apply to these parts?

A: All parts are classified under ECCN EAR99 and HTSUS 8541.29.0095. All parts maintain RoHS compliance. The FDPF5N50T, RJK5026DPP-M0#T2, and TK5A55D are ROHS3 compliant. The TK4A53D is RoHS compliant. REACH status varies: FDPF5N50T is REACH Unaffected, RJK5026DPP-M0#T2 is REACH Affected, and Toshiba parts do not specify REACH status in the provided data.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message