FDPF52N20T N-Channel MOSFET 200V 52A Equivalent & Substitute Parts

Part Overview

The FDPF52N20T is an N-Channel MOSFET manufactured by onsemi, rated for 200V drain-to-source voltage with 52A continuous drain current at 25°C. This device is packaged in a Through Hole TO-220F-3 configuration and is part of the UniFET™ series. The FDPF52N20T is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support and procurement continuity.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	200	V
Continuous Drain Current (Id) @ 25°C	52	A (Tc)
Rds On (Max) @ Id, Vgs	49	mOhm @ 26A, 10V
Gate Threshold Voltage Vgs(th) (Max)	5	V @ 250µA
Gate Charge (Qg) (Max)	63	nC @ 10V
Input Capacitance (Ciss) (Max)	2900	pF @ 25V
Power Dissipation (Max)	38.5	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-220-3	Through Hole
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution of the FDPF52N20T is determined by strict equivalence across the following critical electrical and mechanical parameters:

Mandatory Matching Parameters:

Drain to Source Voltage (Vdss): 200V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package Type: TO-220-3 Through Hole
Gate Threshold Voltage (Vgs(th)): 5V @ specified current
Maximum Gate Voltage (Vgs Max): ±30V

Performance Parameters (Substitute Must Meet or Exceed):

Continuous Drain Current (Id) @ 25°C: Minimum 52A
Rds On (Max): Must not exceed 49mOhm at specified conditions
Power Dissipation (Max): Minimum 38.5W
Operating Temperature Range: Must include -55°C to 150°C

The RCX700N20 from Rohm Semiconductor qualifies as a substitute based on matching voltage ratings, FET type, technology, and package configuration, while exceeding current and power dissipation specifications.

Parameter Comparison

Parameter	FDPF52N20T (onsemi)	RCX700N20 (Rohm)	Match Status
Drain to Source Voltage (Vdss)	200V	200V	Matched
Continuous Drain Current (Id) @ 25°C	52A (Tc)	70A (Tc)	Substitute Exceeds
Rds On (Max) @ Id, Vgs	49mOhm @ 26A, 10V	42.7mOhm @ 35A, 10V	Substitute Exceeds
Gate Threshold Voltage Vgs(th) (Max)	5V @ 250µA	5V @ 1mA	Matched
Gate Charge (Qg) (Max)	63nC @ 10V	125nC @ 10V	Substitute Higher
Input Capacitance (Ciss) (Max)	2900pF @ 25V	6900pF @ 25V	Substitute Higher
Power Dissipation (Max)	38.5W (Tc)	40W (Tc)	Substitute Exceeds
Operating Temperature Range	-55 to 150°C (TJ)	Up to 150°C (TJ)	Substitute Covers Upper Range
Package Type	TO-220-3	TO-220-3	Matched
FET Type	N-Channel	N-Channel	Matched
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	Matched
Vgs (Max)	±30V	±30V	Matched

Engineering Selection Recommendations

FDPF52N20T Status: The FDPF52N20T is classified as obsolete. New designs should not incorporate this part number. Existing designs utilizing this component require substitution planning for long-term supply continuity.

RCX700N20 Substitution Basis: The RCX700N20 from Rohm Semiconductor is classified as active and carries ROHS3 compliance certification. This part meets all mandatory electrical and mechanical parameters required for direct substitution in TO-220-3 Through Hole applications rated for 200V N-Channel MOSFET operation.

Compliance Considerations: Both the FDPF52N20T and RCX700N20 carry REACH Unaffected status and EAR99 ECCN classification. The RCX700N20 provides additional assurance through active product status and RoHS3 compliance, supporting long-term design sustainability and regulatory alignment.

Performance Trade-offs: The RCX700N20 exhibits higher gate charge (125nC versus 63nC) and input capacitance (6900pF versus 2900pF). These increases may affect switching speed and gate drive requirements in high-frequency applications. Circuit validation is required to confirm compatibility with existing gate drive circuitry.

Frequently Asked Questions (FAQ)

Q: Can the RCX700N20 be used as a direct pin-for-pin replacement for the FDPF52N20T?

A: Yes. Both devices share identical TO-220-3 package pinouts and matching gate threshold voltage specifications. Pin-for-pin substitution is mechanically and electrically valid.

Q: What are the key differences between these two parts?

A: The RCX700N20 provides higher continuous drain current (70A versus 52A) and lower on-resistance (42.7mOhm versus 49mOhm). However, it exhibits higher gate charge and input capacitance, which may require gate drive circuit evaluation in switching applications.

Q: Is the RCX700N20 suitable for applications requiring the full -55°C to 150°C operating range?

A: The RCX700N20 specification indicates operation up to 150°C. Verification of the lower temperature limit (-55°C) is required through Rohm Semiconductor technical documentation for applications requiring the full temperature range.

Q: Why is the FDPF52N20T obsolete?

A: Product obsolescence is determined by the manufacturer. The RCX700N20 from Rohm Semiconductor provides an active, supported alternative for 200V N-Channel MOSFET applications in TO-220-3 packaging.

Q: Are there any compliance or certification differences between these parts?

A: The RCX700N20 carries RoHS3 compliance certification, providing additional regulatory assurance. Both parts maintain REACH Unaffected status and EAR99 ECCN classification.

Q: What should be considered when switching from FDPF52N20T to RCX700N20 in existing designs?

A: Gate drive circuit compatibility must be verified due to higher gate charge in the RCX700N20. Thermal management may be improved due to lower on-resistance. Functional testing is recommended to confirm performance in the specific application context.

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