FDPF4N60NZ N-Channel MOSFET 600V 3.8A Equivalent & Substitute Parts

Part Overview

The FDPF4N60NZ is an N-Channel MOSFET manufactured by onsemi, rated for 600V drain-to-source voltage with 3.8A continuous drain current at 25°C. This device is packaged in a TO-220F-3 through-hole configuration and is part of the UniFET-II™ series. The FDPF4N60NZ is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

Substitute parts are selected based on matching or exceeding critical electrical parameters including drain-to-source voltage rating, continuous drain current capability, on-state resistance characteristics, and compatible through-hole packaging. All substitute devices maintain the same mounting type and thermal operating range to ensure direct functional replacement in existing circuit designs.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	600	V
Current - Continuous Drain (Id) @ 25°C	3.8	A (Tc)
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	2.5	Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id	5	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10.8	nC @ 10V
Vgs (Max)	±25	V
Input Capacitance (Ciss) (Max) @ Vds	510	pF @ 25V
Power Dissipation (Max)	28	W (Tc)
Operating Temperature	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-220-3 Full Pack	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the FDPF4N60NZ are selected based on the following critical parameters that determine functional equivalence:

Primary Matching Criteria:

Drain-to-Source Voltage (Vdss): 600V or higher
Continuous Drain Current (Id): Equal to or greater than 3.8A at 25°C
On-State Resistance (Rds On): Comparable performance at rated gate voltage
Mounting Type: Through-hole configuration
Package Type: TO-220 series compatible footprint
Gate Threshold Voltage (Vgs(th)): Within acceptable control range
Operating Temperature Range: -55°C to 150°C or higher

Compliance Requirements:

RoHS3 Compliant status
REACH Unaffected classification
EAR99 export control designation

The following substitute parts meet these criteria and are classified as active products with current manufacturing availability:

AOTF4N60L (Alpha & Omega Semiconductor Inc.): Exceeds drain current rating at 4A; active product status
STF4N62K3 (STMicroelectronics): Matches drain current at 3.8A; higher voltage rating at 620V; active product status
STF3N62K3 (STMicroelectronics): Lower drain current at 2.7A; higher voltage rating at 620V; active product status
IRFIBC30GPBF (Vishay Siliconix): Lower drain current at 2.5A; active product status

Parameter Comparison

Parameter	FDPF4N60NZ	AOTF4N60L	STF4N62K3	STF3N62K3	IRFIBC30GPBF
Manufacturer	onsemi	Alpha & Omega Semiconductor Inc.	STMicroelectronics	STMicroelectronics	Vishay Siliconix
Product Status	Obsolete	Active	Active	Active	Active
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Vdss (V)	600	600	620	620	600
Id @ 25°C (A)	3.8	4.0	3.8	2.7	2.5
Rds On (Max) @ 10V (Ohm)	2.5 @ 1.9A	2.2 @ 2A	2.0 @ 1.9A	2.5 @ 1.4A	2.2 @ 1.5A
Vgs(th) (Max) @ 250µA (V)	5	4.5	4.5	4.5	4
Gate Charge (Qg) @ 10V (nC)	10.8	18	22	13	31
Ciss (Max) @ 25V (pF)	510	615	550	385	660
Power Dissipation (Max) (W)	28	35	25	20	35
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-220-3 Full Pack	TO-220-3 Full Pack	TO-220-3 Full Pack	TO-220-3 Full Pack	TO-220-3 Full Pack, Isolated Tab
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitute: AOTF4N60L

The AOTF4N60L from Alpha & Omega Semiconductor Inc. is the preferred substitute for the obsolete FDPF4N60NZ. This device matches the 600V drain-to-source voltage rating and exceeds the continuous drain current specification at 4.0A compared to the original 3.8A. The AOTF4N60L maintains identical operating temperature range (-55°C to 150°C), through-hole mounting configuration, and TO-220-3 package compatibility. Both devices are RoHS3 compliant and REACH unaffected. The AOTF4N60L is currently in active production with 2789 units in stock.

Secondary Substitute: STF4N62K3

The STF4N62K3 from STMicroelectronics provides an alternative with matched continuous drain current at 3.8A and a higher voltage rating of 620V. This device features improved on-state resistance at 2.0 Ohm compared to the original 2.5 Ohm specification. The STF4N62K3 is part of the SuperMESH3™ series and maintains full compatibility with the original mounting and thermal specifications. This part is actively manufactured with 15365 units in stock, providing high availability.

Tertiary Substitute: STF3N62K3

The STF3N62K3 from STMicroelectronics is suitable for applications where the 2.7A continuous drain current is sufficient. This device offers a higher voltage rating at 620V and lower power dissipation at 20W. The STF3N62K3 is part of the SuperMESH3™ series and maintains full package and thermal compatibility. This part is actively manufactured with 1501 units in stock.

Alternative Substitute: IRFIBC30GPBF

The IRFIBC30GPBF from Vishay Siliconix is suitable only for applications where the 2.5A continuous drain current meets design requirements. This device maintains the 600V voltage rating and TO-220-3 package compatibility with an isolated tab option. The IRFIBC30GPBF is actively manufactured with 3295 units in stock.

All substitute parts maintain RoHS3 compliance and REACH unaffected status, ensuring regulatory compatibility with the original design.

Frequently Asked Questions (FAQ)

Q: Can the AOTF4N60L directly replace the FDPF4N60NZ without circuit modifications?

A: Yes. The AOTF4N60L matches the 600V voltage rating, exceeds the 3.8A current requirement, maintains identical operating temperature range, and uses the same TO-220-3 through-hole package. No circuit modifications are required for direct substitution.

Q: What is the primary difference between the AOTF4N60L and STF4N62K3?

A: The AOTF4N60L maintains the original 600V voltage rating, while the STF4N62K3 provides a higher 620V rating. The STF4N62K3 offers lower on-state resistance (2.0 Ohm vs. 2.2 Ohm) and lower power dissipation (25W vs. 35W). Both devices match the 3.8A continuous drain current specification.

Q: Is the STF3N62K3 suitable for all applications using the FDPF4N60NZ?

A: The STF3N62K3 is suitable only for applications where the continuous drain current requirement does not exceed 2.7A. The original FDPF4N60NZ is rated for 3.8A, so this substitute is not appropriate for designs requiring the full current capability.

Q: Why does the IRFIBC30GPBF have higher gate charge than the original part?

A: The IRFIBC30GPBF has a gate charge of 31 nC compared to the original 10.8 nC. This higher gate charge results from different internal device architecture and may affect switching speed in gate-drive-limited applications. This substitute is suitable only for applications where the 2.5A current rating is sufficient.

Q: Are all substitute parts available in the same packaging format?

A: All substitute parts use TO-220-3 through-hole packaging compatible with the original FDPF4N60NZ footprint. The IRFIBC30GPBF includes an isolated tab option, which provides additional thermal and electrical isolation if required by the application.

Q: What is the impact of higher Vdss ratings on substitute parts?

A: The STF3N62K3 and STF4N62K3 both feature 620V Vdss ratings compared to the original 600V. A higher voltage rating provides additional design margin and does not negatively impact performance in circuits designed for 600V operation. These devices are fully compatible with 600V circuit designs.

Q: Do all substitute parts meet the same compliance standards as the original FDPF4N60NZ?

A: Yes. All substitute parts listed are RoHS3 compliant and REACH unaffected, matching the regulatory status of the original device. All parts carry EAR99 export control designation.

Q: Which substitute part offers the best thermal performance?

A: The STF3N62K3 offers the lowest power dissipation at 20W, followed by the STF4N62K3 at 25W. The AOTF4N60L and IRFIBC30GPBF both offer 35W power dissipation capability. Selection should be based on application current requirements and thermal management design.

Q: Can the AOTF4N60L be used in high-frequency switching applications?

A: The AOTF4N60L has a gate charge of 18 nC at 10V, which is higher than the original 10.8 nC. This may result in slightly slower switching characteristics. For applications sensitive to switching speed, the STF4N62K3 with 22 nC gate charge or STF3N62K3 with 13 nC gate charge should be evaluated based on specific frequency requirements.

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