FDPF3860TYDTU N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The FDPF3860TYDTU is an N-Channel MOSFET manufactured by onsemi, rated for 100V drain-to-source voltage with 20A continuous drain current. This device is part of the PowerTrench® series and features a through-hole TO-220F-3 package with formed leads. The product is currently obsolete, making identification of equivalent and substitute parts essential for design continuity and procurement planning. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating package variations.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	20	A
On-State Resistance (Rds On Max) @ 10V	38.2	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 250µA	4.5	V
Gate Charge (Qg Max) @ 10V	35	nC
Input Capacitance (Ciss Max) @ 25V	1800	pF
Power Dissipation (Max)	33.8	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220F-3 (Y-Forming)	Through Hole
Maximum Gate Voltage	±20	V

Substitute Part Grouping Explanation

Substitution of the FDPF3860TYDTU is determined by strict equivalence across the following electrical parameters:

Primary Matching Criteria:

Drain-to-Source Voltage (Vdss): 100V minimum
Continuous Drain Current (Id): 20A minimum at 25°C
Gate Drive Voltage: 10V
Maximum Gate Voltage: ±20V
Through-hole mounting configuration

Secondary Compatibility Factors:

On-state resistance (Rds On) must not exceed the application's thermal budget
Gate charge and input capacitance affect switching performance
Operating temperature range must encompass the application environment
Package footprint compatibility with TO-220 form factor

The IRFI540NPBF from Infineon Technologies meets these primary criteria with identical voltage and current ratings. Both devices operate within compatible gate voltage specifications and share the same through-hole TO-220 package family, enabling direct functional substitution in most applications.

Parameter Comparison

Parameter	FDPF3860TYDTU (onsemi)	IRFI540NPBF (Infineon)	Unit
FET Type	N-Channel	N-Channel	—
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	—
Drain-to-Source Voltage (Vdss)	100	100	V
Continuous Drain Current (Id) @ 25°C	20	20	A
Drive Voltage (Max Rds On)	10	10	V
Rds On (Max) @ 10V	38.2 @ 5.9A	52 @ 11A	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 250µA	4.5	4	V
Gate Charge (Qg Max) @ 10V	35	94	nC
Input Capacitance (Ciss Max) @ 25V	1800	1400	pF
Maximum Gate Voltage	±20	±20	V
Power Dissipation (Max)	33.8	54	W
Operating Temperature Range	-55 to 150	-55 to 175	°C
Mounting Type	Through Hole	Through Hole	—
Package	TO-220F-3 (Y-Forming)	TO-220AB Full-Pak	—

Engineering Selection Recommendations

FDPF3860TYDTU (onsemi) — Primary Part:

Product Status: Obsolete
REACH Status: REACH Unaffected
Moisture Sensitivity Level: 1 (Unlimited)
Current Availability: 5300 pieces in stock

The FDPF3860TYDTU is no longer in active production. Procurement of this device is limited to existing inventory. For new designs or long-term production requirements, transition to an active substitute is necessary.

IRFI540NPBF (Infineon Technologies) — Recommended Substitute:

Product Status: Active
RoHS Status: ROHS3 Compliant
REACH Status: REACH Unaffected
Moisture Sensitivity Level: 1 (Unlimited)
Current Availability: 15165 pieces in stock

The IRFI540NPBF is an active product with superior availability and compliance certifications. It meets all primary electrical specifications (100V, 20A) and operates across a wider temperature range (-55°C to 175°C versus -55°C to 150°C). The device is RoHS3 compliant, supporting modern supply chain requirements.

Package Compatibility Consideration: The FDPF3860TYDTU uses a TO-220F-3 package with Y-forming leads, while the IRFI540NPBF uses a TO-220AB Full-Pak configuration. Both are through-hole TO-220 variants with three leads. PCB footprint compatibility depends on specific lead spacing and forming specifications. Mechanical verification of lead geometry against the target PCB layout is required before production implementation.

Electrical Trade-offs: The IRFI540NPBF exhibits higher on-state resistance (52 mOhm @ 11A versus 38.2 mOhm @ 5.9A) and higher gate charge (94 nC versus 35 nC). These differences result in increased power dissipation and slower switching characteristics. Applications with stringent thermal or switching frequency requirements must evaluate whether the IRFI540NPBF's performance envelope remains acceptable.

Frequently Asked Questions (FAQ)

Q: Can the IRFI540NPBF directly replace the FDPF3860TYDTU in existing designs?

A: Electrical substitution is valid based on matching voltage (100V), current (20A), and gate voltage (±20V) specifications. However, mechanical compatibility requires verification of the TO-220 package lead geometry and PCB footprint. The IRFI540NPBF's higher on-state resistance and gate charge may affect thermal performance and switching speed in applications operating near design limits.

Q: What are the key differences between these two devices?

A: Both devices are 100V, 20A N-Channel MOSFETs with identical gate voltage ratings. The primary differences are: (1) On-state resistance: FDPF3860TYDTU is 38.2 mOhm versus IRFI540NPBF at 52 mOhm; (2) Gate charge: FDPF3860TYDTU is 35 nC versus IRFI540NPBF at 94 nC; (3) Maximum operating temperature: FDPF3860TYDTU is 150°C versus IRFI540NPBF at 175°C; (4) Product status: FDPF3860TYDTU is obsolete while IRFI540NPBF is active.

Q: Why is the IRFI540NPBF's power dissipation rating higher?

A: The IRFI540NPBF is rated for 54W maximum power dissipation compared to 33.8W for the FDPF3860TYDTU. This reflects the device's higher on-state resistance and different thermal characteristics. Higher power dissipation rating does not indicate superior performance; it reflects the device's thermal design and package capability.

Q: Are there package compatibility issues between TO-220F-3 and TO-220AB?

A: Both packages are through-hole TO-220 variants with three leads. However, the FDPF3860TYDTU uses Y-forming leads while the IRFI540NPBF uses Full-Pak configuration. Lead spacing, forming geometry, and insertion depth may differ. PCB footprint compatibility must be verified against the specific package drawings before production use.

Q: What compliance certifications apply to the IRFI540NPBF?

A: The IRFI540NPBF is RoHS3 compliant and REACH unaffected. Both devices carry ECCN EAR99 classification and HTSUS code 8541.29.0095. Moisture sensitivity level is 1 (unlimited) for both parts.

Q: Can the FDPF3860TYDTU still be sourced?

A: The FDPF3860TYDTU is obsolete and no longer manufactured. Procurement is limited to existing inventory from authorized distributors. Current stock availability is reported at 5300 pieces. For applications requiring long-term supply assurance, transition to the active IRFI540NPBF is recommended.

Q: How do gate charge differences affect circuit performance?

A: The IRFI540NPBF's higher gate charge (94 nC versus 35 nC) requires longer gate drive times and higher gate drive current to achieve the same switching speed as the FDPF3860TYDTU. Applications with high-frequency switching or limited gate drive capability may experience performance degradation. Gate driver selection and circuit timing must be re-evaluated for the substitute device.

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