FDPF2710T N-Channel MOSFET 250V 25A Equivalent & Substitute Parts

Part Overview

The FDPF2710T is an N-Channel MOSFET manufactured by onsemi, rated for 250V drain-to-source voltage and 25A continuous drain current at 25°C. This device is housed in a TO-220F-3 through-hole package and belongs to the PowerTrench® series. The part maintains Active product status with full RoHS3 compliance and REACH unaffected designation.

Substitute parts are identified when equivalent electrical performance and mechanical compatibility can be maintained across the specified parameter ranges. Alternative components may be required due to inventory availability, supply chain considerations, or design optimization within the allowed electrical and mechanical specifications.

Substiute Parts

FDPF2710T
onsemiIn Stock: 4853FDPF2710T Datasheet
FDPF2710T
Current Part
IPP600N25N3GXKSA1
Infineon TechnologiesIn Stock: 1644IPP600N25N3GXKSA1 Datasheet
IPP600N25N3GXKSA1
Direct
IRFI4229PBF
Infineon TechnologiesIn Stock: 16409IRFI4229PBF Datasheet
IRFI4229PBF
Direct

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 250 V
Continuous Drain Current (Id) @ 25°C 25 A (Tc)
Drive Voltage (Max Rds On) 10 V
Rds On (Max) @ Id, Vgs 42.5 mOhm @ 25A, 10V
Gate Threshold Voltage Vgs(th) (Max) 5 V @ 250µA
Gate Charge (Qg) (Max) 101 nC @ 10V
Maximum Gate Voltage (Vgs) ±30 V
Input Capacitance (Ciss) (Max) 7280 pF @ 25V
Power Dissipation (Max) 62.5 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Through Hole -
Package / Case TO-220-3 -
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
RoHS Status ROHS3 Compliant -

Substitute Part Grouping Explanation

Substitution eligibility for the FDPF2710T is determined by the following critical parameters:

Electrical Compatibility Criteria:

  • Drain to Source Voltage (Vdss) must equal or exceed 250V
  • Continuous Drain Current (Id) must equal or exceed 25A at 25°C
  • Drive Voltage (Max Rds On) must be 10V or lower
  • Gate Threshold Voltage must be compatible with 5V gate drive levels
  • Maximum Gate Voltage (Vgs) must accommodate ±30V or greater

Mechanical Compatibility Criteria:

  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 or equivalent footprint

Compliance Requirements:

  • RoHS3 Compliant
  • REACH Unaffected status

Parts meeting these criteria are classified as direct substitutes. Parts with reduced current ratings or lower power dissipation may function in applications with reduced load requirements but do not qualify as full electrical equivalents.

Parameter Comparison

Parameter FDPF2710T (Main) IPP600N25N3GXKSA1 IRFI4229PBF Unit
Manufacturer onsemi Infineon Technologies Infineon Technologies -
Series PowerTrench® OptiMOS™ HEXFET® -
Product Status Active Active Obsolete -
FET Type N-Channel N-Channel N-Channel -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 250 250 250 V
Continuous Drain Current (Id) @ 25°C 25 25 19 A (Tc)
Drive Voltage (Max Rds On) 10 10 10 V
Rds On (Max) @ Id, Vgs 42.5 @ 25A, 10V 60 @ 25A, 10V 46 @ 11A, 10V mOhm
Gate Threshold Voltage Vgs(th) (Max) 5 @ 250µA 4 @ 90µA 5 @ 250µA V
Gate Charge (Qg) (Max) 101 29 110 nC @ 10V
Maximum Gate Voltage (Vgs) ±30 ±20 ±30 V
Input Capacitance (Ciss) (Max) 7280 @ 25V 2350 @ 100V 4480 @ 25V pF
Power Dissipation (Max) 62.5 136 46 W (Tc)
Operating Temperature Range -55 to 150 -55 to 175 -40 to 150 °C (TJ)
Mounting Type Through Hole Through Hole Through Hole -
Package / Case TO-220-3 TO-220-3 TO-220-3 -
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant -
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected -

Engineering Selection Recommendations

IPP600N25N3GXKSA1 (Infineon OptiMOS™)

This part qualifies as a direct electrical substitute for the FDPF2710T. Both devices maintain identical Vdss (250V) and Id (25A) ratings with compatible drive voltage specifications. The IPP600N25N3GXKSA1 maintains Active product status with full RoHS3 compliance and REACH unaffected designation. The higher power dissipation rating (136W vs. 62.5W) and extended operating temperature range (-55 to 175°C) provide additional thermal margin. The lower gate charge (29 nC vs. 101 nC) reduces driver power requirements. The reduced maximum gate voltage (±20V vs. ±30V) requires verification of gate drive circuit compliance. Both parts use identical TO-220-3 through-hole packaging.

IRFI4229PBF (Infineon HEXFET®)

This part does not qualify as a full electrical substitute due to reduced continuous drain current rating (19A vs. 25A at 25°C). The IRFI4229PBF is classified as Obsolete, which restricts its use in new designs and long-term production applications. The lower power dissipation (46W vs. 62.5W) and reduced current capacity limit its application scope. This part may function in circuits with reduced load requirements but does not provide equivalent electrical performance across the full rated specifications of the FDPF2710T. RoHS3 compliance and REACH unaffected status are maintained.

Frequently Asked Questions (FAQ)

Q: Can the IPP600N25N3GXKSA1 replace the FDPF2710T in all applications?

A: The IPP600N25N3GXKSA1 meets the electrical and mechanical requirements for direct substitution. Both parts share identical Vdss (250V) and Id (25A) ratings, compatible drive voltage (10V), and TO-220-3 through-hole packaging. The maximum gate voltage specification differs (±20V vs. ±30V); gate drive circuits must operate within the ±20V limit of the substitute part. Both parts maintain RoHS3 compliance and REACH unaffected status.

Q: Why is the IRFI4229PBF listed if it cannot fully replace the FDPF2710T?

A: The IRFI4229PBF is included in the reference documentation as a historical substitute relationship. This part does not meet the full electrical specifications of the FDPF2710T due to its reduced continuous drain current (19A vs. 25A). The Obsolete product status further restricts its use in new designs. This part is retained in the reference for legacy system maintenance only.

Q: What is the significance of the different gate charge values?

A: Gate charge (Qg) affects the power consumption and switching speed of the gate driver circuit. The FDPF2710T requires 101 nC at 10V, while the IPP600N25N3GXKSA1 requires only 29 nC. Lower gate charge reduces driver power dissipation and may improve switching performance. The IRFI4229PBF requires 110 nC, comparable to the main part. These differences do not affect substitution eligibility but influence overall circuit efficiency.

Q: Are there package compatibility concerns between these parts?

A: All three parts use TO-220-3 through-hole packaging with identical mechanical footprints. Direct PCB mounting compatibility is confirmed. Thermal interface requirements (heatsink mounting) are identical across all parts.

Q: What compliance certifications apply to all listed parts?

A: All parts maintain RoHS3 compliance and REACH unaffected status. ECCN classification is EAR99 for all parts. HTSUS code 8541.29.0095 applies uniformly. These certifications confirm regulatory compliance for industrial and commercial applications.

Q: How does the operating temperature range affect substitution decisions?

A: The FDPF2710T operates from -55 to 150°C. The IPP600N25N3GXKSA1 extends this range to -55 to 175°C, providing additional thermal margin. The IRFI4229PBF operates from -40 to 150°C, which is narrower at the low end. For applications requiring full -55°C operation, the IRFI4229PBF is not suitable. The IPP600N25N3GXKSA1 provides superior thermal performance across the extended range.

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