FDPF20N50T N-Channel 500V 20A MOSFET Equivalent & Substitute Parts

Part Overview

The FDPF20N50T is an N-Channel MOSFET manufactured by onsemi, rated for 500V drain-to-source voltage with 20A continuous drain current at 25°C. This device is packaged in a Through Hole TO-220F-3 configuration and belongs to the UniFET™ series. The part is currently in Active product status with 1813 units in stock.

Equivalent and substitute parts are necessary when the primary part becomes unavailable, when design requirements demand alternative sourcing options, or when inventory constraints require component flexibility. Substitutes must maintain electrical and mechanical compatibility within the specified parameter ranges.

Substiute Parts

FDPF20N50T
onsemiIn Stock: 1915FDPF20N50T Datasheet
FDPF20N50T
Current Part
FDPF20N50
onsemiIn Stock: 2251FDPF20N50 Datasheet
FDPF20N50
Parametric Equivalent
STF19NM50N
STMicroelectronicsIn Stock: 15290STF19NM50N Datasheet
STF19NM50N
Similar

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 500 V
Continuous Drain Current (Id) @ 25°C 20 A
On-State Resistance (Rds On) @ 10A, 10V 230 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 5 V
Gate Charge (Qg) @ 10V 59.5 nC
Power Dissipation (Max) 38.5 W
Operating Temperature Range -55 to 150 °C
Mounting Type Through Hole -
Package TO-220-3 -
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -

Substitute Part Grouping Explanation

Substitution eligibility for the FDPF20N50T is determined by the following critical parameters:

Mandatory Matching Criteria:

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V minimum
  • Mounting Type: Through Hole
  • Package Type: TO-220 series

Performance Compatibility Criteria:

  • Continuous Drain Current (Id): Must support 20A or greater at 25°C
  • On-State Resistance (Rds On): Must not exceed 230mOhm at specified gate voltage
  • Gate Threshold Voltage (Vgs(th)): Must fall within acceptable switching range
  • Power Dissipation: Must support 38.5W or greater thermal capability
  • Operating Temperature: Must encompass -55°C to 150°C range

Substitute parts are classified into two categories:

Parametric Equivalent: Parts with identical or superior electrical specifications and matching package configuration. These parts are direct functional replacements.

Similar Manufacturer Part: Parts with comparable voltage and current ratings but with variations in secondary parameters such as gate charge, input capacitance, or power dissipation. These parts require application-level verification of thermal and switching characteristics.

Parameter Comparison

Parameter FDPF20N50T (Main) FDPF20N50 (Parametric Equivalent) STF19NM50N (Similar)
Manufacturer onsemi onsemi STMicroelectronics
Product Status Active Obsolete Active
Drain to Source Voltage (Vdss) 500V 500V 500V
Continuous Drain Current (Id) @ 25°C 20A 20A 14A
On-State Resistance (Rds On) @ 10V 230mOhm @ 10A 230mOhm @ 10A 250mOhm @ 7A
Gate Threshold Voltage (Vgs(th)) @ 250µA 5V 5V 4V
Gate Charge (Qg) @ 10V 59.5nC 59.5nC 34nC
Power Dissipation (Max) 38.5W 38.5W 30W
Operating Temperature Range -55 to 150°C -55 to 150°C -55 to 150°C
Mounting Type Through Hole Through Hole Through Hole
Package TO-220-3 TO-220-3 TO-220-3
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

FDPF20N50 (Parametric Equivalent):

The FDPF20N50 is a parametric equivalent to the FDPF20N50T with identical electrical specifications and package configuration. Both parts are manufactured by onsemi and share the same UniFET™ series designation. The FDPF20N50 carries Obsolete product status, indicating it is no longer in active production. This part is suitable for substitution only in applications where existing inventory is available and long-term supply is not a requirement. Current inventory shows 2224 units in stock. Both parts maintain ROHS3 compliance and REACH Unaffected status.

STF19NM50N (Similar Manufacturer Part):

The STF19NM50N is manufactured by STMicroelectronics and operates within the same 500V voltage class. This part is currently in Active product status with 15232 units in stock, providing superior long-term availability. The STF19NM50N differs from the FDPF20N50T in the following parameters:

  • Continuous Drain Current: 14A (versus 20A for FDPF20N50T)
  • On-State Resistance: 250mOhm @ 7A (versus 230mOhm @ 10A for FDPF20N50T)
  • Gate Charge: 34nC (versus 59.5nC for FDPF20N50T)
  • Power Dissipation: 30W (versus 38.5W for FDPF20N50T)
  • Input Capacitance: 1000pF @ 50V (versus 3120pF @ 25V for FDPF20N50T)

The STF19NM50N is suitable for applications where the 14A current rating is sufficient and thermal dissipation requirements do not exceed 30W. The lower gate charge provides faster switching characteristics. This part maintains ROHS3 compliance and REACH Unaffected status with Moisture Sensitivity Level 1 (Unlimited).

Frequently Asked Questions (FAQ)

Q: Can the FDPF20N50 be used as a direct replacement for the FDPF20N50T?

A: The FDPF20N50 is electrically and mechanically identical to the FDPF20N50T. However, the FDPF20N50 carries Obsolete product status, meaning it is no longer manufactured. Substitution is possible only if existing inventory is available and future supply is not a concern. For new designs or long-term production, the FDPF20N50T (Active status) is the preferred choice.

Q: Is the STF19NM50N a suitable replacement for the FDPF20N50T?

A: The STF19NM50N is a similar part that operates at the same 500V voltage rating and shares the same TO-220-3 package. However, it has a lower continuous drain current rating (14A versus 20A) and lower power dissipation capability (30W versus 38.5W). The STF19NM50N is suitable only for applications where the 14A current requirement is sufficient and thermal dissipation does not exceed 30W. Applications requiring the full 20A rating cannot use this substitute.

Q: What are the key differences in switching characteristics between these parts?

A: The FDPF20N50T and FDPF20N50 have identical gate charge specifications (59.5nC @ 10V). The STF19NM50N has significantly lower gate charge (34nC @ 10V), resulting in faster switching transitions and lower gate drive power requirements. The STF19NM50N also has lower input capacitance (1000pF versus 3120pF), which contributes to improved high-frequency performance.

Q: Are all three parts RoHS and REACH compliant?

A: Yes. The FDPF20N50T, FDPF20N50, and STF19NM50N are all ROHS3 Compliant and REACH Unaffected. All parts carry ECCN classification EAR99 and HTSUS code 8541.29.0095.

Q: What is the difference in on-state resistance between these parts?

A: The FDPF20N50T and FDPF20N50 both specify 230mOhm on-state resistance at 10A gate voltage of 10V. The STF19NM50N specifies 250mOhm on-state resistance at 7A gate voltage of 10V. The higher resistance specification for the STF19NM50N reflects its lower current rating and different die technology (MDmesh™ II series versus UniFET™ series).

Q: Can these parts be used interchangeably in high-current applications?

A: No. The FDPF20N50T and FDPF20N50 are rated for 20A continuous drain current and are suitable for high-current applications. The STF19NM50N is rated for only 14A continuous drain current and cannot be used in applications requiring the full 20A capability. Current derating and thermal analysis are required when selecting between these parts.

Q: What inventory considerations should guide part selection?

A: The FDPF20N50T (Active status) has 1813 units in stock. The FDPF20N50 (Obsolete status) has 2224 units in stock but represents end-of-life inventory. The STF19NM50N (Active status) has 15232 units in stock, providing the highest availability. For new designs and long-term production, the STF19NM50N offers superior supply chain security if its lower current and power ratings are acceptable for the application.

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