FDPF20N50 N-Channel 500V 20A MOSFET Equivalent & Substitute Parts

Part Overview

The FDPF20N50 is an N-Channel MOSFET manufactured by onsemi in the UniFET™ series, rated for 500V drain-to-source voltage and 20A continuous drain current. The device is packaged in a Through Hole TO-220F-3 configuration and is currently listed as obsolete. Due to its obsolete status, equivalent and substitute parts are necessary for ongoing design support, production continuity, and system maintenance. Substitute parts must maintain electrical compatibility within the specified voltage, current, and thermal operating parameters while accommodating available packaging options.

Substiute Parts

FDPF20N50
onsemiIn Stock: 2251FDPF20N50 Datasheet
FDPF20N50
Current Part
FDPF20N50T
onsemiIn Stock: 1915FDPF20N50T Datasheet
FDPF20N50T
Parametric Equivalent
IPP50R250CPXKSA1
Infineon TechnologiesIn Stock: 1083IPP50R250CPXKSA1 Datasheet
IPP50R250CPXKSA1
Similar
IPP50R280CEXKSA1
Infineon TechnologiesIn Stock: 1406IPP50R280CEXKSA1 Datasheet
IPP50R280CEXKSA1
Similar
IRFI3205PBF
Infineon TechnologiesIn Stock: 2715IRFI3205PBF Datasheet
IRFI3205PBF
Similar
IXTP460P2
IXYSIn Stock: 3587IXTP460P2 Datasheet
IXTP460P2
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TK19A45D(STA4,Q,M)
Toshiba Semiconductor and StorageIn Stock: 970TK19A45D(STA4,Q,M) Datasheet
TK19A45D(STA4,Q,M)
Similar

Key Parameters

Parameter Value Unit
FET Type N-Channel
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 20 A (Tc)
Drive Voltage (Max Rds On) 10 V
Rds On (Max) @ Id, Vgs 230 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 5 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 59.5 nC @ 10V
Vgs (Max) ±30 V
Input Capacitance (Ciss) (Max) @ Vds 3120 pF @ 25V
Power Dissipation (Max) 38.5 W (Tc)
Operating Temperature -55 to 150 °C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Technology MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the FDPF20N50 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

  • Drain to Source Voltage (Vdss): 500V minimum
  • Continuous Drain Current (Id): 20A or greater at 25°C
  • Gate Drive Voltage: 10V nominal
  • On-State Resistance (Rds On): 230mOhm or lower at specified conditions
  • Mounting Type: Through Hole
  • Package Type: TO-220 series compatible

Secondary Compatibility Factors:

  • Gate Threshold Voltage (Vgs(th)): 3.5V to 5V range
  • Maximum Gate Voltage (Vgs): ±20V or ±30V
  • Operating Temperature Range: -55°C to 150°C minimum
  • RoHS3 Compliance and REACH Unaffected status

Substitute parts are classified into two categories:

Parametric Equivalent: Parts with identical or superior electrical specifications and active product status, enabling direct replacement with no design modifications.

Similar Parts: Parts with comparable voltage and current ratings but with variations in on-state resistance, gate charge, or current capacity. These require application-level verification to confirm suitability for the intended circuit function.

Parameter Comparison

Parameter FDPF20N50 FDPF20N50T IXTP460P2 IPP50R250CPXKSA1 IPP50R280CEXKSA1 TK19A45D(STA4,Q,M) IRFI3205PBF
Manufacturer onsemi onsemi IXYS Infineon Infineon Toshiba Infineon
Vdss (V) 500 500 500 500 500 450 55
Id @ 25°C (A) 20 20 24 13 13 19 64
Rds On (Max) (mOhm) 230 @ 10A, 10V 230 @ 10A, 10V 270 @ 12A, 10V 250 @ 7.8A, 10V 280 @ 4.2A, 13V 250 @ 9.5A, 10V 8 @ 34A, 10V
Vgs(th) (Max) (V) 5 @ 250µA 5 @ 250µA 4.5 @ 250µA 3.5 @ 520µA 3.5 @ 350µA 4 @ 1mA 4 @ 250µA
Qg (Max) (nC) 59.5 @ 10V 59.5 @ 10V 48 @ 10V 36 @ 10V 32.6 @ 10V 45 @ 10V 170 @ 10V
Vgs (Max) (V) ±30 ±30 ±30 ±20 ±20 ±30 ±20
Ciss (Max) (pF) 3120 @ 25V 3120 @ 25V 2890 @ 25V 1420 @ 100V 773 @ 100V 2600 @ 25V 4000 @ 25V
Pd (Max) (W) 38.5 38.5 480 114 92 50 63
Operating Temp (°C) -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 to 150 -55 to 175
Package TO-220F-3 TO-220F-3 TO-220-3 PG-TO220-3-1 PG-TO220-3-1 TO-220SIS TO-220AB Full-Pak
Product Status Obsolete Active Last Time Buy Active Active Active Active
RoHS3 Compliant Yes Yes Yes Yes Yes Yes Yes

Engineering Selection Recommendations

Parametric Equivalent (Direct Replacement):

The FDPF20N50T is the primary equivalent for the obsolete FDPF20N50. Both parts share identical electrical specifications including 500V Vdss, 20A continuous drain current, 230mOhm Rds On, and 38.5W power dissipation. The FDPF20N50T is manufactured by onsemi in the same UniFET™ series and maintains active product status. The only difference is packaging format (Tube versus standard), which does not affect electrical performance. This part is suitable for direct substitution in all applications.

Similar Parts (Application-Dependent Selection):

IXTP460P2 (IXYS): Rated for 500V Vdss and 24A continuous drain current, exceeding the 20A requirement. On-state resistance is 270mOhm at 12A, slightly higher than the 230mOhm specification. Gate charge is lower at 48nC, improving switching speed. Power dissipation capability is significantly higher at 480W. This part is suitable for applications where higher current capacity and improved thermal performance are beneficial. Product status is Last Time Buy, indicating limited future availability.

IPP50R250CPXKSA1 (Infineon CoolMOS™): Rated for 500V Vdss but with reduced continuous drain current of 13A, below the 20A requirement. On-state resistance is 250mOhm at 7.8A. Gate charge is lower at 36nC. This part is not suitable for applications requiring the full 20A continuous current capacity.

IPP50R280CEXKSA1 (Infineon CoolMOS™): Rated for 500V Vdss with 13A continuous drain current, below the 20A requirement. On-state resistance is 280mOhm at 4.2A. This part is not suitable for applications requiring the full 20A continuous current capacity.

TK19A45D(STA4,Q,M) (Toshiba π-MOSVII): Rated for 450V Vdss and 19A continuous drain current. Vdss is 50V lower than the 500V specification, limiting applicability to circuits with maximum operating voltages below 450V. On-state resistance is 250mOhm at 9.5A. This part is suitable only for applications with reduced voltage requirements.

IRFI3205PBF (Infineon HEXFET®): Rated for 55V Vdss, significantly lower than the 500V requirement. This part is not suitable for high-voltage applications and represents a different device class.

Compliance and Availability:

All substitute parts listed maintain RoHS3 compliance and REACH Unaffected status, consistent with the original FDPF20N50. The FDPF20N50T and active-status Infineon parts offer the best long-term availability and supply chain stability.

Frequently Asked Questions (FAQ)

Q: Can the FDPF20N50T be used as a direct replacement for the FDPF20N50?

A: Yes. The FDPF20N50T is a parametric equivalent with identical electrical specifications. Both parts are N-Channel MOSFETs rated for 500V Vdss, 20A continuous drain current, and 230mOhm on-state resistance. The FDPF20N50T is manufactured by onsemi and maintains active product status, making it the recommended replacement for the obsolete FDPF20N50.

Q: Why is the IXTP460P2 listed as a substitute if it has higher on-state resistance?

A: The IXTP460P2 meets the primary voltage and current requirements (500V Vdss, 24A continuous drain current) and exceeds the 20A specification. The on-state resistance of 270mOhm is slightly higher than 230mOhm but remains within acceptable tolerance for many applications. The significantly higher power dissipation capability (480W versus 38.5W) makes this part suitable for circuits with higher thermal demands. Application-level verification is required to confirm suitability.

Q: Can the Infineon IPP50R250CPXKSA1 replace the FDPF20N50?

A: No. While the IPP50R250CPXKSA1 matches the 500V Vdss rating, its continuous drain current is limited to 13A, which is below the 20A requirement of the FDPF20N50. This part is not suitable for applications requiring the full 20A continuous current capacity.

Q: What is the significance of the different package types (TO-220F-3 versus TO-220-3)?

A: Both TO-220F-3 and TO-220-3 are Through Hole packages with identical pin configurations and electrical performance. The primary difference is mechanical form factor and mounting footprint. TO-220F-3 is a full-pack variant, while TO-220-3 is the standard configuration. Both are compatible with standard TO-220 mounting hardware and PCB layouts. Verify mechanical clearance and thermal management requirements for your specific application.

Q: Why is the TK19A45D(STA4,Q,M) not recommended as a primary substitute?

A: The TK19A45D(STA4,Q,M) is rated for 450V Vdss, which is 50V lower than the 500V specification of the FDPF20N50. This voltage limitation restricts its use to circuits with maximum operating voltages below 450V. Additionally, the continuous drain current is 19A, slightly below the 20A requirement. This part is suitable only for applications with reduced voltage and current requirements.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed in this reference maintain RoHS3 compliance and REACH Unaffected status, consistent with the original FDPF20N50. This ensures environmental and regulatory compatibility across all listed alternatives.

Q: What should I consider when selecting between the FDPF20N50T and IXTP460P2?

A: The FDPF20N50T is the preferred choice for direct replacement due to identical specifications and active product status. The IXTP460P2 is suitable if your application benefits from higher current capacity (24A versus 20A) and significantly higher power dissipation capability (480W versus 38.5W). However, the IXTP460P2 has Last Time Buy status, indicating limited future availability. For new designs, the FDPF20N50T is recommended.

Q: Can I use the IRFI3205PBF as a substitute?

A: No. The IRFI3205PBF is rated for only 55V Vdss, which is far below the 500V requirement of the FDPF20N50. This part operates in a different voltage class and is not suitable for high-voltage applications. It represents a fundamentally different device category.

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