FDPF18N20FT-G Equivalent & Substitute Parts

Part Overview

The FDPF18N20FT-G is an N-Channel MOSFET manufactured by onsemi, rated for 200V drain-to-source voltage with 18A continuous drain current at 25°C. This device is packaged in a Through Hole TO-220F-3 configuration and is part of the UniFET™ series. The part is currently classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support, maintenance, and production continuity. Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, current capacity, and thermal characteristics while accommodating the through-hole mounting requirement.

Substiute Parts

FDPF18N20FT-G
onsemiIn Stock: 1243FDPF18N20FT-G Datasheet
FDPF18N20FT-G
Current Part
RCX200N20
Rohm SemiconductorIn Stock: 1201RCX200N20 Datasheet
RCX200N20
Similar

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 200 V
Continuous Drain Current (Id) @ 25°C 18 A
Drive Voltage (Max Rds On) 10 V
Rds On (Max) @ Id, Vgs 140 mOhm @ 9A, 10V
Gate Threshold Voltage (Vgs(th)) @ Id 5 V @ 250µA
Gate Charge (Qg) @ Vgs 26 nC @ 10V
Maximum Gate Voltage (Vgs) ±30 V
Input Capacitance (Ciss) @ Vds 1180 pF @ 25V
Power Dissipation (Max) 35 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Through Hole -
Package Type TO-220-3 -
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -

Substitute Part Grouping Explanation

Substitute parts for the FDPF18N20FT-G are identified based on strict electrical and mechanical compatibility criteria. The primary substitution logic is based on the following key parameters:

Critical Matching Parameters:

  • Drain to Source Voltage (Vdss): Must equal or exceed 200V
  • FET Type: Must be N-Channel
  • Technology: Must be MOSFET (Metal Oxide)
  • Mounting Type: Must be Through Hole
  • Package Type: Must be TO-220 variant (TO-220-3 compatible footprint)
  • Operating Temperature Range: Must support -55°C to 150°C or equivalent upper limit

Performance Parameters (Allowable Variation):

  • Continuous Drain Current (Id): Substitute must meet or exceed 18A at 25°C
  • Rds On (Max): Substitute must not exceed 140mOhm at specified conditions
  • Gate Charge (Qg): Substitute specifications are noted but do not restrict substitution
  • Input Capacitance (Ciss): Substitute specifications are noted but do not restrict substitution

The RCX200N20 from Rohm Semiconductor meets all critical matching parameters and exceeds performance specifications in drain current capacity (20A vs. 18A) and on-resistance (130mOhm vs. 140mOhm), making it a direct electrical substitute. Both parts maintain ROHS3 compliance and REACH unaffected status.

Parameter Comparison

Parameter FDPF18N20FT-G (onsemi) RCX200N20 (Rohm Semiconductor) Unit
Drain to Source Voltage (Vdss) 200 200 V
Continuous Drain Current (Id) @ 25°C 18 20 A
Drive Voltage (Max Rds On) 10 10 V
Rds On (Max) @ Id, Vgs 140 @ 9A, 10V 130 @ 10A, 10V mOhm
Gate Threshold Voltage (Vgs(th)) @ Id 5 @ 250µA 5 @ 1mA V
Gate Charge (Qg) @ Vgs 26 @ 10V 40 @ 10V nC
Maximum Gate Voltage (Vgs) ±30 ±30 V
Input Capacitance (Ciss) @ Vds 1180 @ 25V 1900 @ 25V pF
Power Dissipation (Max) 35 (Tc) 40 (Tc) W
Operating Temperature Range -55 to 150 -55 to 150 °C (TJ)
Mounting Type Through Hole Through Hole -
Package Type TO-220-3 TO-220-3 -
FET Type N-Channel N-Channel -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
RoHS Status ROHS3 Compliant ROHS3 Compliant -
REACH Status REACH Unaffected REACH Unaffected -
Product Status Obsolete Active -

Engineering Selection Recommendations

The RCX200N20 from Rohm Semiconductor is a direct electrical substitute for the FDPF18N20FT-G. Selection of this substitute is supported by the following factors:

Compliance and Regulatory Status: Both parts maintain ROHS3 compliance and REACH unaffected status, ensuring regulatory alignment for new designs and ongoing production support.

Product Status Consideration: The FDPF18N20FT-G is classified as obsolete, while the RCX200N20 is active. The active status of the substitute part ensures long-term availability and supply chain continuity.

Electrical Compatibility: The RCX200N20 meets or exceeds all critical electrical parameters. The 200V Vdss rating matches exactly, continuous drain current is increased from 18A to 20A, and on-resistance is improved from 140mOhm to 130mOhm. These characteristics ensure the substitute performs at equivalent or superior levels in the application.

Thermal and Mechanical Compatibility: Both parts operate across the same temperature range (-55°C to 150°C) and utilize identical through-hole TO-220-3 packaging, ensuring direct mechanical and thermal compatibility in existing PCB layouts and thermal management designs.

Gate Charge and Input Capacitance: The RCX200N20 exhibits higher gate charge (40nC vs. 26nC) and input capacitance (1900pF vs. 1180pF). These parameters affect switching speed and gate drive requirements. Circuit designs must accommodate these increased values through appropriate gate drive circuit sizing.

Frequently Asked Questions (FAQ)

Q: Can the RCX200N20 be used as a direct replacement for the FDPF18N20FT-G in existing designs?

A: The RCX200N20 is electrically compatible and uses identical TO-220-3 through-hole packaging. However, the increased gate charge (40nC vs. 26nC) and input capacitance (1900pF vs. 1180pF) require verification that the gate drive circuit can supply adequate current and voltage for proper switching performance. PCB layout remains unchanged.

Q: What are the key differences between these two parts?

A: The primary differences are: (1) Manufacturer—onsemi vs. Rohm Semiconductor; (2) Product Status—obsolete vs. active; (3) Continuous drain current—18A vs. 20A; (4) On-resistance—140mOhm vs. 130mOhm; (5) Gate charge—26nC vs. 40nC; (6) Input capacitance—1180pF vs. 1900pF. All other critical parameters, including voltage rating, temperature range, and package type, are identical.

Q: Are there any thermal management considerations when substituting the RCX200N20?

A: The RCX200N20 has a maximum power dissipation of 40W (Tc) compared to 35W (Tc) for the FDPF18N20FT-G. This 5W increase is within typical thermal design margins for TO-220 packages. Existing thermal management solutions designed for the original part remain adequate for the substitute.

Q: Does the higher gate charge of the RCX200N20 affect circuit performance?

A: Gate charge directly impacts switching speed and gate drive power consumption. The RCX200N20 requires 40nC at 10V compared to 26nC for the original part. Gate drive circuits must supply sufficient current to charge the gate within the required switching time. Verify that the gate driver IC or discrete gate drive circuit can deliver the necessary current at the operating frequency.

Q: Are both parts available in the same packaging format?

A: Both parts use TO-220-3 through-hole packaging. The FDPF18N20FT-G uses TO-220F-3 (full pack variant) while the RCX200N20 uses TO-220FM. Both variants are mechanically and electrically compatible with standard TO-220-3 PCB footprints and mounting hardware.

Q: What is the inventory status for these parts?

A: The FDPF18N20FT-G has 1153 pieces in stock (obsolete status). The RCX200N20 has 1156 pieces in stock and is an active product, ensuring continued availability for future orders and production runs.

Q: Do both parts meet the same regulatory and compliance standards?

A: Both parts are ROHS3 compliant and REACH unaffected. They share identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications, ensuring equivalent regulatory treatment in procurement and export documentation.

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