FDPF10N60ZUT N-Channel 600V 9A MOSFET Equivalent & Substitute Parts

Part Overview

The FDPF10N60ZUT is an N-Channel 600V 9A MOSFET manufactured by onsemi in the UniFET™ series, housed in a Through Hole TO-220F-3 package. This device is classified as Obsolete, making identification of functionally equivalent alternatives necessary for ongoing production and maintenance applications. The part operates across a temperature range of -55°C to 150°C and dissipates up to 42W at the case temperature. Substitute parts must maintain electrical compatibility across drain-source voltage, continuous drain current, on-resistance characteristics, and gate charge specifications while accommodating different mounting technologies and package configurations.

Key Parameters

Parameter	Value	Unit	Condition
Drain to Source Voltage (Vdss)	600	V	—
Continuous Drain Current (Id) @ 25°C	9	A	Tc
On-Resistance (Rds On Max)	800	mOhm	@ 4.5A, 10V
Gate Threshold Voltage (Vgs(th) Max)	5	V	@ 250µA
Gate Charge (Qg Max)	40	nC	@ 10V
Maximum Gate Voltage (Vgs Max)	±30	V	—
Input Capacitance (Ciss Max)	1980	pF	@ 25V
Power Dissipation (Max)	42	W	Tc
Operating Temperature Range	-55 to 150	°C	TJ
Mounting Type	Through Hole	—	—
Package	TO-220-3 Full Pack	—	—
RoHS Status	ROHS3 Compliant	—	—

Substitute Part Grouping Explanation

Substitute parts for the FDPF10N60ZUT are classified into two categories based on electrical and mechanical compatibility:

Category 1: Direct Through-Hole Substitutes (Preferred) These parts maintain the Through Hole mounting technology and TO-220 package format, ensuring mechanical compatibility with existing PCB layouts and assembly processes. Electrical parameters must fall within acceptable ranges for drain-source voltage (600V nominal), continuous drain current (9A or higher), on-resistance (≤800mOhm), and gate charge specifications. Parts in this category include AOTF10N60L, AOTF11N60L, AOTF11N62L, R6007ENX, R6007KNX, R6008ANX, STF12NK80Z, STF7NM60N, and STF8NM60ND.

Category 2: Surface Mount Alternative (Different Mounting Technology) The FCD620N60ZF represents a surface mount option with different electrical characteristics. While it maintains 600V drain-source voltage rating, it features reduced continuous drain current (7.3A versus 9A) and improved on-resistance (620mOhm versus 800mOhm). This part requires PCB redesign and different assembly processes but offers enhanced thermal performance (89W dissipation versus 42W).

Substitution logic is based strictly on the following parameters:

Drain to Source Voltage (Vdss): Must equal or exceed 600V
Continuous Drain Current (Id): Must equal or exceed 9A for direct substitution
On-Resistance (Rds On): Lower values are acceptable; higher values require thermal analysis
Gate Charge (Qg): Lower values reduce switching losses
Operating Temperature Range: Must encompass -55°C to 150°C
Package Compliance: RoHS3 and REACH compliance required

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On Max (mOhm)	Qg Max (nC)	Vgs Max (V)	Mounting Type	Package	Product Status
FDPF10N60ZUT	onsemi	600	9	800	40	±30	Through Hole	TO-220-3	Obsolete
AOTF10N60L	Alpha & Omega	600	10	750	40	—	Through Hole	TO-220-3	Active
AOTF11N60L	Alpha & Omega	600	11	650	37	±30	Through Hole	TO-220-3	Active
AOTF11N62L	Alpha & Omega	620	11	650	37	±30	Through Hole	TO-220-3	Active
R6007ENX	Rohm	600	7	620	20	±20	Through Hole	TO-220-3	Active
R6007KNX	Rohm	600	7	620	14.5	±20	Through Hole	TO-220-3	Active
R6008ANX	Rohm	600	8	800	21	±30	Through Hole	TO-220-3	Not For New Designs
STF12NK80Z	STMicroelectronics	800	10.5	750	87	±30	Through Hole	TO-220-3	Active
STF7NM60N	STMicroelectronics	600	5	900	14	±25	Through Hole	TO-220-3	Active
STF8NM60ND	STMicroelectronics	600	7	700	22	±30	Through Hole	TO-220-3	Active
FCD620N60ZF	onsemi	600	7.3	620	36	±20	Surface Mount	TO-252-3	Not For New Designs

Engineering Selection Recommendations

For Direct Replacement (Through-Hole TO-220 Package)

AOTF11N60L and AOTF11N62L from Alpha & Omega Semiconductor are the primary recommended substitutes. Both parts are Active status, RoHS3 compliant, and maintain the Through Hole TO-220-3 package format. AOTF11N60L provides 11A continuous drain current with 650mOhm on-resistance, exceeding the original 9A specification while reducing on-resistance losses. AOTF11N62L offers identical electrical performance with a 620V drain-source voltage rating, providing additional voltage margin. Both parts operate across the full -55°C to 150°C temperature range and feature ±30V maximum gate voltage compatibility.

AOTF10N60L serves as an alternative with 10A continuous drain current and 750mOhm on-resistance, maintaining exact 600V voltage rating and 40nC gate charge specification. This part is Active status and suitable for applications requiring minimal parameter deviation from the original design.

For Current-Limited Applications

R6007ENX and R6007KNX from Rohm Semiconductor are suitable for applications where 7A continuous drain current is acceptable. Both maintain 600V drain-source voltage and feature improved on-resistance (620mOhm). R6007KNX offers superior gate charge characteristics (14.5nC versus 20nC) and extended temperature range (-55°C to 150°C), making it preferable for dynamic switching applications. Both parts are Active status and RoHS3 compliant.

For Higher Voltage Applications

STF12NK80Z from STMicroelectronics provides 800V drain-source voltage rating with 10.5A continuous drain current, suitable for applications requiring voltage margin above 600V. This part is Active status and RoHS3 compliant but features elevated gate charge (87nC) compared to the original specification.

Surface Mount Alternative

FCD620N60ZF from onsemi is classified as Not For New Designs but remains available with 7620 units in stock. This part requires complete PCB redesign due to Surface Mount TO-252-3 package format. It is suitable only for legacy system maintenance where through-hole replacement is not feasible.

Compliance and Regulatory Status

All recommended substitutes maintain ROHS3 compliance and REACH Unaffected status, matching the original part's regulatory classification. Parts designated as Active status are preferred for new designs and ongoing production. Parts marked Not For New Designs (R6008ANX, FCD620N60ZF) are acceptable for replacement applications but should not be selected for new circuit designs.

Frequently Asked Questions (FAQ)

Q: Can AOTF11N60L directly replace FDPF10N60ZUT without circuit modification?

A: AOTF11N60L is mechanically and electrically compatible for direct PCB replacement. The part maintains identical TO-220-3 package format, 600V drain-source voltage, and ±30V maximum gate voltage. The increased continuous drain current (11A versus 9A) and reduced on-resistance (650mOhm versus 800mOhm) provide improved performance margins. No circuit modification is required.

Q: What is the difference between R6007ENX and R6007KNX?

A: Both parts share identical electrical ratings (600V, 7A, 620mOhm on-resistance) and TO-220-3 package format. R6007KNX features lower gate charge (14.5nC versus 20nC) and extended operating temperature range (-55°C to 150°C versus 150°C maximum). R6007KNX is preferred for applications with dynamic switching requirements or temperature extremes.

Q: Why is STF12NK80Z rated at 800V instead of 600V?

A: STF12NK80Z is a higher voltage device designed for applications requiring voltage margin above 600V. The elevated voltage rating does not prevent use in 600V applications but introduces higher gate charge (87nC) and input capacitance, potentially increasing switching losses. Selection depends on circuit requirements and thermal budget.

Q: Can FCD620N60ZF replace FDPF10N60ZUT?

A: FCD620N60ZF is electrically compatible (600V, 7.3A continuous current) but requires complete PCB redesign due to Surface Mount TO-252-3 package format versus Through Hole TO-220-3. This part is classified as Not For New Designs and should be used only for legacy system maintenance where through-hole replacement is not feasible.

Q: What is the significance of "Not For New Designs" status?

A: Parts marked Not For New Designs indicate manufacturer discontinuation plans or reduced production commitment. These parts remain available for replacement and maintenance applications but should not be selected for new circuit designs. Active status parts are preferred for ongoing production.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Lower gate charge reduces switching losses and allows faster switching speeds. STF7NM60N (14nC) and R6007KNX (14.5nC) feature significantly lower gate charge than the original FDPF10N60ZUT (40nC), reducing power dissipation in high-frequency switching applications. Higher gate charge devices like STF12NK80Z (87nC) require more drive energy but may provide improved EMI characteristics.

Q: Are all substitute parts RoHS3 compliant?

A: All substitute parts listed maintain ROHS3 compliance and REACH Unaffected status, matching the original FDPF10N60ZUT regulatory classification. Compliance verification is provided in the manufacturer datasheets.

Q: What is the thermal performance difference between through-hole and surface mount packages?

A: FCD620N60ZF (surface mount, 89W dissipation) provides superior thermal performance compared to FDPF10N60ZUT (through-hole, 42W dissipation) due to improved case-to-ambient thermal coupling in the TO-252-3 package. However, surface mount implementation requires PCB redesign and different assembly processes.

Q: Can lower current-rated parts like STF7NM60N be used in applications designed for 9A?

A: STF7NM60N is rated for 5A continuous drain current, below the original 9A specification. Use in 9A applications requires thermal analysis to confirm the device operates within safe junction temperature limits. Continuous operation at or above rated current may result in thermal runaway. This part is suitable only for applications with reduced current requirements.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message