FDPF10N60NZ N-Channel 600V 10A MOSFET Equivalent & Substitute Parts

Part Overview

The FDPF10N60NZ is an N-Channel 600V 10A MOSFET manufactured by onsemi in the UniFET-II™ series, housed in a TO-220F-3 through-hole package. This device is classified as obsolete product status. The part operates across a temperature range of -55°C to 150°C and is suitable for high-voltage switching applications requiring 600V drain-to-source voltage capability with 10A continuous drain current at 25°C.

Due to obsolete product status, equivalent and substitute parts from active manufacturers are necessary for new designs and ongoing production requirements. Substitutes must maintain electrical compatibility within specified parameter tolerances while meeting current RoHS3 compliance and availability standards.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	600	V
Current - Continuous Drain (Id) @ 25°C	10	A
Rds On (Max) @ Id, Vgs	750 mOhm @ 5A, 10V	—
Vgs(th) (Max) @ Id	5	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	30	nC @ 10V
Power Dissipation (Max)	38	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole	—
Package / Case	TO-220-3 Full Pack	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution logic for the FDPF10N60NZ is based on the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 600V minimum (650V acceptable with margin)
Continuous Drain Current (Id): 10A minimum at 25°C
On-State Resistance (Rds On): 750 mOhm maximum at specified conditions
Gate Threshold Voltage (Vgs(th)): 5V maximum
Mounting Type: Through Hole TO-220 package variants
Temperature Range: -55°C to 150°C minimum
RoHS3 Compliance: Required

Substitution Categories:

Category 1: Direct Electrical Equivalents (Vdss 600V, Id ≥10A) Parts maintaining identical voltage and current ratings with compatible on-state resistance and gate characteristics. These provide direct functional replacement with minimal circuit redesign.

Category 2: Higher Voltage Rated Equivalents (Vdss 620-650V, Id ≥10A) Parts with elevated voltage ratings (620V or 650V) that exceed the 600V requirement. These provide enhanced voltage margin and are electrically compatible for 600V applications. Lower on-state resistance values in this category improve efficiency.

Category 3: Current-Rated Variants (Vdss 600V, Id 7-11A) Parts with current ratings between 7A and 11A at 600V. These accommodate applications where exact 10A matching is not critical and provide flexibility in thermal management through alternative power dissipation ratings.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Power Diss. (W)	Temp Range (°C)	Package	Status
FDPF10N60NZ	onsemi	600	10	750 @ 5A, 10V	5 @ 250µA	30 @ 10V	38	-55 to 150	TO-220-3	Obsolete
FCPF600N65S3R0L	onsemi	650	6	600 @ 3A, 10V	4.5 @ 600µA	11 @ 10V	24	-55 to 150	TO-220-3	Active
AOTF10N60L	Alpha & Omega	600	10	750 @ 5A, 10V	4.5 @ 250µA	40 @ 10V	—	-55 to 150	TO-220-3	Active
AOTF11N60L	Alpha & Omega	600	11	650 @ 5.5A, 10V	4.5 @ 250µA	37 @ 10V	37.9	-55 to 150	TO-220-3	Active
AOTF11N62L	Alpha & Omega	620	11	650 @ 5.5A, 10V	4.5 @ 250µA	37 @ 10V	39	-55 to 150	TO-220-3	Active
IPAN65R650CEXKSA1	Infineon	650	10.1	650 @ 2.1A, 10V	3.5 @ 210µA	23 @ 10V	28	-40 to 150	TO-220-3	Active
R6007ENX	Rohm	600	7	620 @ 2.4A, 10V	4 @ 1mA	20 @ 10V	40	—	TO-220-3	Active
R6007KNX	Rohm	600	7	620 @ 2.4A, 10V	5 @ 1mA	14.5 @ 10V	46	-55 to 150	TO-220-3	Active
R6008ANX	Rohm	600	8	800 @ 4A, 10V	4.5 @ 1mA	21 @ 10V	50	—	TO-220-3	Not For New Designs
STF7NM60N	STMicroelectronics	600	5	900 @ 2.5A, 10V	4 @ 250µA	14 @ 10V	20	—	TO-220-5	Active
STF8NM60ND	STMicroelectronics	600	7	700 @ 3.5A, 10V	5 @ 250µA	22 @ 10V	25	—	TO-220-3	Active

Engineering Selection Recommendations

Recommended Primary Substitute: AOTF10N60L

The AOTF10N60L from Alpha & Omega Semiconductor Inc. is the optimal direct substitute for the FDPF10N60NZ. This part maintains identical electrical specifications: 600V Vdss, 10A continuous drain current, and 750 mOhm on-state resistance at the same test conditions. The device is in active product status with full RoHS3 compliance and unlimited moisture sensitivity level (MSL 1). The TO-220-3 package provides mechanical compatibility without PCB redesign. Gate threshold voltage of 4.5V at 250µA is within acceptable tolerance of the original 5V specification.

Secondary Substitute: AOTF11N60L

The AOTF11N60L provides enhanced current capability (11A) at identical 600V voltage rating with improved on-state resistance (650 mOhm at 5.5A, 10V). This part is suitable for applications requiring thermal margin or where higher current transients occur. Active product status and full RoHS3 compliance ensure long-term availability. Operating temperature range matches the original specification (-55°C to 150°C).

Alternative Substitute: IPAN65R650CEXKSA1

The IPAN65R650CEXKSA1 from Infineon Technologies (CoolMOS™ series) offers 650V voltage rating with 10.1A continuous current, providing voltage margin above the 600V requirement. This part features superior on-state resistance (650 mOhm at 2.1A, 10V) and lower gate charge (23 nC), resulting in improved switching efficiency. Active product status and RoHS3 compliance are confirmed. Operating temperature range is -40°C to 150°C, which covers the original -55°C lower limit with reduced cold-temperature margin.

Not Recommended: R6008ANX

The R6008ANX is classified as "Not For New Designs" and should not be selected for new applications despite electrical compatibility. This status indicates manufacturer discontinuation trajectory and potential supply constraints.

Not Recommended: STF7NM60N

The STF7NM60N provides only 5A continuous current, which is insufficient for the 10A requirement of the original part. This device is suitable only for applications with reduced current demands.

Frequently Asked Questions (FAQ)

Q: Can the AOTF10N60L directly replace the FDPF10N60NZ without circuit modifications?

A: Yes. The AOTF10N60L maintains identical electrical specifications for Vdss (600V), Id (10A), and Rds On (750 mOhm at 5A, 10V). The TO-220-3 package is mechanically compatible. Gate threshold voltage differs slightly (4.5V vs. 5V), which is within normal design tolerance and does not require circuit changes.

Q: What is the advantage of selecting AOTF11N60L over AOTF10N60L?

A: The AOTF11N60L provides 11A continuous current versus 10A, offering thermal margin and improved transient current handling. On-state resistance is lower (650 mOhm vs. 750 mOhm), reducing power dissipation. This selection is appropriate for applications operating near the 10A limit or requiring enhanced reliability margin.

Q: Why is IPAN65R650CEXKSA1 listed as an alternative despite 650V rating?

A: The 650V rating exceeds the 600V requirement, providing voltage safety margin. The part is electrically compatible for 600V applications. The 10.1A current rating meets the 10A requirement. Lower gate charge (23 nC) and improved on-state resistance characteristics make this part suitable for efficiency-critical applications. The operating temperature range (-40°C to 150°C) covers most industrial applications, though the -55°C lower limit is not reached.

Q: Are there package compatibility concerns with any substitute parts?

A: Most substitutes use TO-220-3 package, which is mechanically compatible with the original TO-220F-3. The STF7NM60N uses TO-220-5 package, which has different pin configuration and is not a direct mechanical replacement. Verify PCB footprint compatibility before selection.

Q: What does "Not For New Designs" status mean for R6008ANX?

A: This status indicates the manufacturer is transitioning the part to end-of-life. While the part may be electrically compatible, it should not be selected for new product designs due to potential future supply discontinuation and lack of long-term availability commitment.

Q: How do gate charge differences affect circuit design?

A: Gate charge (Qg) determines the charge required to switch the MOSFET on or off. The FDPF10N60NZ specifies 30 nC at 10V. Substitutes range from 11 nC (FCPF600N65S3R0L) to 40 nC (AOTF10N60L). Lower gate charge reduces switching losses and allows faster switching speeds. Higher gate charge increases driver power requirements. Circuit gate driver selection should accommodate the specified gate charge of the selected substitute.

Q: Is RoHS3 compliance mandatory for all substitutes?

A: Yes. All recommended substitutes maintain RoHS3 compliance, matching the original part specification. This compliance is required for most industrial and consumer applications and ensures environmental regulatory adherence.

Q: Can lower-current parts like STF7NM60N or R6007ENX be used in applications designed for 10A?

A: No. These parts provide only 5A and 7A continuous current respectively, which is insufficient for applications requiring 10A. Using undersized current-rated devices results in thermal stress, reduced reliability, and potential device failure. Select only parts with Id ≥10A for direct replacement.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message