FDPF10N50UT N-Channel 500V 8A MOSFET Equivalent & Substitute Parts

Part Overview

The FDPF10N50UT is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET) manufactured by onsemi, rated for 500V drain-to-source voltage and 8A continuous drain current. This device is packaged in a TO-220F-3 through-hole configuration and is part of the UniFET™ series. The FDPF10N50UT is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support and component procurement.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	8	A
On-State Resistance (Rds On) @ 4A, 10V	1.05	Ohm
Gate Threshold Voltage (Vgs(th)) @ 250µA	5	V
Gate Charge (Qg) @ 10V	24	nC
Input Capacitance (Ciss) @ 25V	1130	pF
Power Dissipation (Max)	42	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole	-
Package	TO-220-3	-

Substitute Part Grouping Explanation

Substitution of the FDPF10N50UT is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

Drain-to-Source Voltage (Vdss) must equal or exceed 500V
Continuous Drain Current (Id) must equal or exceed 8A
On-State Resistance (Rds On) must be comparable to ensure similar power dissipation characteristics
Gate Threshold Voltage (Vgs(th)) must be within acceptable operating range
Maximum Gate Voltage (Vgs Max) must be ±30V or greater
Operating temperature range must support -55°C to 150°C or equivalent upper limit of 150°C

Mechanical Compatibility Criteria:

Mounting type must be Through Hole
Package must be TO-220-3 or compatible TO-220 variant
Pin configuration must support three-terminal FET topology (Gate, Drain, Source)

Regulatory Compliance:

RoHS3 compliance required
ECCN classification EAR99

Substitute parts are grouped into two categories: Direct Substitutes (meeting all primary electrical and mechanical parameters) and Similar Substitutes (meeting core electrical parameters with minor deviations in secondary characteristics).

Parameter Comparison

Parameter	FDPF10N50UT (Main)	TK8A55DA(STA4,Q,M)	R5007FNX	SIHF8N50L-E3	TK7A55D(STA4,Q,M)	TK8A50DA(STA4,Q,M)
Manufacturer	onsemi	Toshiba	Rohm	Vishay Siliconix	Toshiba	Toshiba
Vdss (V)	500	550	500	500	550	500
Id @ 25°C (A)	8	7.5	7	8	7	7.5
Rds On @ 10V (Ohm)	1.05 @ 4A	1.07 @ 3.8A	1.3 @ 3.5A	1.0 @ 4A	1.25 @ 3.5A	1.04 @ 3.8A
Vgs(th) (V)	5 @ 250µA	4 @ 1mA	4 @ 1mA	5 @ 250µA	4.4 @ 1mA	4.4 @ 1mA
Qg @ 10V (nC)	24	16	15	34	16	16
Ciss @ 25V (pF)	1130	800	450	873	700	700
Power Dissipation (W)	42	40	40	40	35	35
Operating Temp (°C)	-55 to 150	150	150	-55 to 150	150	150
Package	TO-220F-3	TO-220SIS	TO-220FM	TO-220	TO-220SIS	TO-220SIS
Product Status	Obsolete	Active	Active	Active	Active	Active
RoHS3 Compliant	Yes	Yes	Yes	Yes	Yes	Yes

Engineering Selection Recommendations

Direct Substitutes (Highest Compatibility):

SIHF8N50L-E3 (Vishay Siliconix) is the closest electrical equivalent to the FDPF10N50UT. This device matches the 500V Vdss rating, 8A continuous drain current, and 5V gate threshold voltage. The on-state resistance of 1.0 Ohm at 4A, 10V is superior to the main part. Operating temperature range extends from -55°C to 150°C, matching the FDPF10N50UT specification. The TO-220 full pack configuration is mechanically compatible. Product status is Active, ensuring long-term availability. RoHS3 compliance and EAR99 classification are confirmed.

TK8A50DA(STA4,Q,M) (Toshiba Semiconductor and Storage) provides electrical compatibility with 500V Vdss and 7.5A continuous drain current. On-state resistance of 1.04 Ohm at 3.8A, 10V is comparable to the main part. Gate threshold voltage of 4.4V at 1mA is within acceptable operating range. The TO-220SIS package is mechanically compatible with TO-220-3 configuration. Product status is Active. RoHS3 compliance is confirmed.

Secondary Substitutes (Acceptable Compatibility with Minor Deviations):

TK8A55DA(STA4,Q,M) (Toshiba Semiconductor and Storage) offers 550V Vdss, exceeding the 500V requirement. Continuous drain current of 7.5A is slightly below the 8A specification. On-state resistance of 1.07 Ohm at 3.8A, 10V is comparable. Gate threshold voltage of 4V at 1mA is acceptable. Product status is Active. RoHS3 compliance is confirmed.

TK7A55D(STA4,Q,M) (Toshiba Semiconductor and Storage) provides 550V Vdss and 7A continuous drain current. On-state resistance of 1.25 Ohm at 3.5A, 10V represents a minor increase in on-state losses. Gate threshold voltage of 4.4V at 1mA is acceptable. Product status is Active. RoHS3 compliance is confirmed.

R5007FNX (Rohm Semiconductor) maintains 500V Vdss but provides 7A continuous drain current, below the 8A specification. On-state resistance of 1.3 Ohm at 3.5A, 10V is higher than the main part, resulting in increased power dissipation. Gate threshold voltage of 4V at 1mA is acceptable. Product status is Active. RoHS3 compliance is confirmed. This substitute is suitable for applications where the 7A current rating is sufficient.

All substitute parts are RoHS3 compliant and classified as EAR99, meeting regulatory requirements equivalent to the FDPF10N50UT.

Frequently Asked Questions (FAQ)

Q: Can the SIHF8N50L-E3 directly replace the FDPF10N50UT without circuit modification?

A: The SIHF8N50L-E3 is electrically and mechanically compatible with the FDPF10N50UT. Both devices share identical Vdss (500V), Id (8A), and Vgs(th) (5V @ 250µA) specifications. The on-state resistance of 1.0 Ohm is superior, resulting in lower power dissipation. The TO-220 package is compatible with TO-220-3 pin configuration. No circuit modification is required for direct substitution.

Q: What is the difference between TO-220F-3, TO-220SIS, TO-220FM, and TO-220 packages?

A: All variants are through-hole TO-220 packages with three-terminal FET configuration (Gate, Drain, Source). TO-220F-3 is the onsemi variant, TO-220SIS is the Toshiba variant, TO-220FM is the Rohm variant, and TO-220 is the Vishay variant. Pin assignments and mechanical dimensions are standardized across these variants, ensuring mechanical and electrical compatibility in standard TO-220 footprints.

Q: Why does the FDPF10N50UT have higher gate charge (24 nC) compared to substitute parts?

A: Gate charge variation reflects differences in internal capacitance and switching characteristics between manufacturers. The FDPF10N50UT exhibits higher input capacitance (1130 pF) compared to substitute parts, resulting in higher gate charge. This affects gate drive requirements but does not prevent substitution if the gate driver circuit is capable of supplying the required charge.

Q: Is the TK7A55D(STA4,Q,M) suitable for applications requiring 8A continuous current?

A: The TK7A55D(STA4,Q,M) is rated for 7A continuous drain current, which is below the 8A specification of the FDPF10N50UT. This substitute is suitable only for applications where the actual continuous current requirement does not exceed 7A. For applications requiring the full 8A rating, the SIHF8N50L-E3 or TK8A50DA(STA4,Q,M) are recommended.

Q: What is the impact of on-state resistance differences on circuit performance?

A: On-state resistance directly affects power dissipation and voltage drop across the device during conduction. The FDPF10N50UT exhibits 1.05 Ohm at 4A, 10V. The SIHF8N50L-E3 provides 1.0 Ohm, resulting in lower losses. The R5007FNX exhibits 1.3 Ohm, resulting in higher losses. For high-current applications, lower on-state resistance reduces thermal stress and improves efficiency.

Q: Are all substitute parts RoHS3 compliant?

A: All substitute parts listed are RoHS3 compliant. The FDPF10N50UT is also RoHS3 compliant. Compliance with RoHS3 regulations is confirmed for all devices in this reference.

Q: Can the R5007FNX be used in place of the FDPF10N50UT?

A: The R5007FNX maintains 500V Vdss but provides 7A continuous drain current, which is below the 8A specification. Additionally, on-state resistance is higher at 1.3 Ohm. This substitute is suitable only for applications where the actual continuous current requirement does not exceed 7A and where the higher on-state resistance is acceptable.

Q: What is the operating temperature range limitation for Toshiba substitute parts?

A: Toshiba substitute parts (TK8A55DA, TK7A55D, TK8A50DA) specify a maximum operating temperature of 150°C without a minimum temperature specification in the provided data. The FDPF10N50UT and SIHF8N50L-E3 specify -55°C to 150°C. For applications requiring operation below 0°C, the SIHF8N50L-E3 is recommended.

Q: How does power dissipation rating affect substitute selection?

A: The FDPF10N50UT is rated for 42W power dissipation. Most substitute parts are rated for 35W to 40W. Lower power dissipation ratings indicate reduced thermal capacity. For applications approaching the 42W limit, the SIHF8N50L-E3 (40W) or FDPF10N50UT equivalent is preferred. Thermal management design should account for the specific power dissipation rating of the selected device.

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