FDP8896 N-Channel MOSFET 30V 16A/92A TO-220-3 Equivalent & Substitute Parts

Part Overview

The FDP8896 is an N-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage with continuous drain current of 16A at Ta (ambient temperature) and 92A at Tc (case temperature). This device is packaged in TO-220-3 through-hole configuration and is part of the PowerTrench® series. The FDP8896 is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support, production continuity, and component sourcing. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, thermal characteristics, and gate drive requirements while accommodating the through-hole TO-220 package family.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current @ Tc	92	A
Continuous Drain Current @ Ta	16	A
Power Dissipation (Max) @ Tc	80	W
Rds On (Max) @ 35A, 10V	5.9	mOhm
Gate Charge (Qg) @ 10V	67	nC
Input Capacitance (Ciss) @ 15V	2525	pF
Operating Temperature Range	-55 to 175	°C
Package Type	TO-220-3	Through Hole
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the FDP8896 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal 30V
FET Type: Must be N-Channel
Technology: Must be MOSFET (Metal Oxide)
Package Type: Must be TO-220-3 or TO-220AB (mechanically compatible through-hole variants)
Mounting Type: Must be Through Hole
Operating Temperature Range: Must encompass -55°C to 175°C

Secondary Compatibility Parameters:

Continuous Drain Current @ Tc: Substitute must support minimum 92A
Power Dissipation: Substitute must support minimum 80W at Tc
Rds On (Max): Lower or equal values indicate improved performance
Gate Charge (Qg): Lower values reduce drive circuit stress
Input Capacitance (Ciss): Lower values reduce switching losses

All identified substitute parts meet the primary criteria. Variations in secondary parameters reflect different design optimizations within the 30V N-Channel MOSFET class and do not preclude functional substitution when electrical specifications are satisfied.

Parameter Comparison

Parameter	FDP8896	IRL3803PBF	IRLB8748PBF	PSMN2R0-30PL,127	PSMN4R3-30PL,127	STP90NF03L
Manufacturer	onsemi	Infineon	Infineon	Nexperia	Nexperia	STMicroelectronics
Vdss (V)	30	30	30	30	30	30
Id @ Tc (A)	92	140	92	100	100	90
Power Dissipation @ Tc (W)	80	200	75	211	103	150
Rds On (Max) @ 10V (mOhm)	5.9 @ 35A	6 @ 71A	4.8 @ 40A	2.1 @ 15A	4.3 @ 15A	6.5 @ 45A
Gate Charge @ Vgs (nC)	67 @ 10V	140 @ 4.5V	23 @ 4.5V	117 @ 10V	41.5 @ 10V	47 @ 5V
Ciss (Max) (pF)	2525 @ 15V	5000 @ 25V	2139 @ 15V	6810 @ 12V	2400 @ 12V	2700 @ 25V
Vgs (Max) (±V)	±20	±16	±20	±20	±20	±20
Operating Temp Range (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-65 to 175
Package	TO-220-3	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220
Product Status	Obsolete	Not For New Designs	Active	Obsolete	Obsolete	Not For New Designs
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Recommendation: IRLB8748PBF

The IRLB8748PBF is the preferred substitute for the FDP8896. This Infineon HEXFET® device matches the 92A continuous drain current specification at Tc and maintains 30V Vdss rating. The IRLB8748PBF is classified as Active product status, ensuring ongoing availability and manufacturing support. All electrical parameters fall within acceptable substitution ranges: Rds On of 4.8 mOhm at 40A, 10V is superior to the FDP8896 specification, and gate charge of 23 nC at 4.5V reduces drive circuit requirements. The device is ROHS3 compliant and rated for -55°C to 175°C operation. TO-220AB packaging is mechanically compatible with TO-220-3 applications.

Secondary Recommendations:

PSMN4R3-30PL,127 (Nexperia) provides 100A continuous drain current with 4.3 mOhm Rds On and reduced gate charge of 41.5 nC. This device offers performance margin above the FDP8896 specification but carries Obsolete product status.

STP90NF03L (STMicroelectronics) delivers 90A continuous drain current with extended operating temperature range to -65°C. Product status is Not For New Designs, limiting long-term availability.

IRL3803PBF (Infineon) supports 140A continuous drain current with 200W power dissipation, providing significant performance headroom. Product status is Not For New Designs.

PSMN2R0-30PL,127 (Nexperia) offers superior Rds On of 2.1 mOhm and 100A current rating but carries Obsolete status and higher gate charge of 117 nC.

Compliance Considerations:

All substitute parts maintain ROHS3 compliance and REACH Unaffected status, matching the FDP8896 regulatory profile. Selection should prioritize Active product status for new designs and long-term production continuity.

Frequently Asked Questions (FAQ)

Q: Can the IRLB8748PBF directly replace the FDP8896 in existing PCB layouts?

A: The IRLB8748PBF uses TO-220AB packaging, which is mechanically compatible with TO-220-3 through-hole footprints. Pin configuration (Gate, Drain, Source) is identical. Direct PCB substitution is supported without layout modification.

Q: What is the difference between TO-220-3 and TO-220AB packaging?

A: Both are through-hole TO-220 variants with identical pin assignments and mechanical compatibility. TO-220AB is a designation variant used by certain manufacturers. Thermal and electrical performance are equivalent when mounted identically.

Q: Why does the IRLB8748PBF have lower gate charge than the FDP8896?

A: Gate charge variation reflects different silicon process technology and die design. Lower gate charge (23 nC vs. 67 nC) reduces gate drive circuit power dissipation and enables faster switching transitions. This is a performance advantage in substitution.

Q: Is the PSMN2R0-30PL,127 suitable despite Obsolete status?

A: The PSMN2R0-30PL,127 meets all electrical substitution criteria and maintains current inventory (10,198 pcs). Obsolete status indicates no new production; however, existing stock supports near-term applications. For long-term production, Active status devices such as IRLB8748PBF are preferred.

Q: What does Rds On specification mean for substitution?

A: Rds On (on-state drain-to-source resistance) directly affects power dissipation and heat generation. Lower Rds On values indicate improved efficiency. Substitute parts with equal or lower Rds On values are electrically superior and support direct replacement.

Q: Can I use a substitute with higher continuous current rating?

A: Yes. Substitute parts rated for 100A, 140A, or 90A continuous drain current are fully compatible with applications requiring 92A. Higher current ratings provide design margin and thermal headroom without compromising functionality.

Q: What is the significance of gate charge in circuit design?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Lower gate charge reduces drive circuit stress and power loss. The IRLB8748PBF at 23 nC requires significantly less gate drive energy than the FDP8896 at 67 nC, improving overall system efficiency.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All identified substitute parts maintain ROHS3 compliance and REACH Unaffected status, matching the FDP8896 regulatory profile for environmental and hazardous substance restrictions.

Q: Why is product status important in selecting a substitute?

A: Product status indicates manufacturing lifecycle. Active status ensures ongoing production, technical support, and long-term availability. Obsolete or Not For New Designs status indicates limited future availability, making them suitable for existing inventory management but not recommended for new production designs.

Q: Can I substitute based on power dissipation alone?

A: No. Power dissipation is one of multiple critical parameters. Substitution requires matching Vdss (30V), FET type (N-Channel), package (TO-220), and supporting minimum continuous current (92A). All parameters must be satisfied simultaneously.

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