FDP8880 Equivalent & Substitute Parts

Part Overview

The FDP8880 is an N-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage with continuous drain current of 11A (Ta) or 54A (Tc) in a Through Hole TO-220-3 package. This device is part of the PowerTrench® series and is classified as obsolete. Due to its obsolete status, equivalent substitute parts are necessary for new designs, production continuity, and long-term component availability. Substitute devices must maintain electrical compatibility across voltage ratings, current handling, and thermal characteristics while meeting the same packaging and compliance requirements.

Substiute Parts

FDP8880
onsemiIn Stock: 16270FDP8880 Datasheet
FDP8880
Current Part
IRLB8721PBF
Infineon TechnologiesIn Stock: 15477IRLB8721PBF Datasheet
IRLB8721PBF
Similar
PSMN2R0-30PL,127
Nexperia USA Inc.In Stock: 10287PSMN2R0-30PL,127 Datasheet
PSMN2R0-30PL,127
Similar
PSMN4R3-30PL,127
Nexperia USA Inc.In Stock: 5627PSMN4R3-30PL,127 Datasheet
PSMN4R3-30PL,127
Similar

Key Parameters

Parameter FDP8880 Specification
Manufacturer onsemi
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-to-Source Voltage (Vdss) 30 V
Continuous Drain Current (Id) @ 25°C 11A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs 11.6 mOhm @ 40A, 10V
Gate Threshold Voltage (Vgs(th)) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1240 pF @ 15V
Power Dissipation (Max) 55W (Tc)
Operating Temperature Range -55°C to 175°C (TJ)
Package / Case TO-220-3
Mounting Type Through Hole
Product Status Obsolete
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the FDP8880 is determined by strict adherence to the following electrical and mechanical parameters:

Critical Matching Parameters:

  • Drain-to-Source Voltage (Vdss): Must equal 30V
  • FET Type: Must be N-Channel
  • Technology: Must be MOSFET (Metal Oxide)
  • Package / Case: Must be TO-220-3 or compatible TO-220AB variant
  • Mounting Type: Must be Through Hole
  • Operating Temperature Range: Must support -55°C to 175°C (TJ)
  • RoHS Status: Must be ROHS3 Compliant
  • Moisture Sensitivity Level: Must be 1 (Unlimited)

Functional Compatibility Parameters:

  • Continuous Drain Current (Id) @ 25°C: Substitute must meet or exceed 11A (Ta) or 54A (Tc)
  • Rds On (Max): Lower or equal values indicate improved performance
  • Gate Threshold Voltage (Vgs(th)): Must be within compatible range for gate drive circuits
  • Gate Charge (Qg): Lower values reduce switching losses
  • Input Capacitance (Ciss): Lower values reduce gate drive requirements
  • Power Dissipation (Max): Must support thermal requirements of the application

All three substitute parts meet these criteria and are qualified for direct replacement in applications where the FDP8880 was originally specified.

Parameter Comparison

Parameter FDP8880 (onsemi) IRLB8721PBF (Infineon) PSMN2R0-30PL,127 (Nexperia) PSMN4R3-30PL,127 (Nexperia)
Manufacturer onsemi Infineon Technologies Nexperia USA Inc. Nexperia USA Inc.
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain-to-Source Voltage (Vdss) 30V 30V 30V 30V
Continuous Drain Current (Id) @ 25°C 11A (Ta), 54A (Tc) 62A (Tc) 100A (Tc) 100A (Tc)
Rds On (Max) @ Id, Vgs 11.6 mOhm @ 40A, 10V 8.7 mOhm @ 31A, 10V 2.1 mOhm @ 15A, 10V 4.3 mOhm @ 15A, 10V
Gate Threshold Voltage (Vgs(th)) (Max) @ Id 2.5V @ 250µA 2.35V @ 25µA 2.15V @ 1mA 2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10V 13 nC @ 4.5V 117 nC @ 10V 41.5 nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1240 pF @ 15V 1077 pF @ 15V 6810 pF @ 12V 2400 pF @ 12V
Power Dissipation (Max) 55W (Tc) 65W (Tc) 211W (Tc) 103W (Tc)
Operating Temperature Range -55°C to 175°C (TJ) -55°C to 175°C (TJ) -55°C to 175°C (TJ) -55°C to 175°C (TJ)
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3
Mounting Type Through Hole Through Hole Through Hole Through Hole
Product Status Obsolete Active Obsolete Obsolete
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

IRLB8721PBF (Infineon Technologies)

The IRLB8721PBF is an active product with ROHS3 compliance and MSL 1 rating, making it the preferred choice for new designs and long-term production continuity. This device exceeds FDP8880 specifications in continuous drain current (62A vs. 54A Tc) and power dissipation (65W vs. 55W Tc) while maintaining the same 30V voltage rating and TO-220-3 package. The lower gate charge (13 nC @ 4.5V) and input capacitance (1077 pF @ 15V) provide improved switching characteristics compared to the FDP8880.

PSMN4R3-30PL,127 (Nexperia USA Inc.)

The PSMN4R3-30PL,127 provides significant performance enhancement with 100A continuous drain current and 103W power dissipation. This device is suitable for applications requiring higher current handling or thermal margin. Although classified as obsolete, it maintains full ROHS3 compliance and MSL 1 rating. The lower on-resistance (4.3 mOhm @ 15A, 10V) reduces conduction losses compared to the FDP8880.

PSMN2R0-30PL,127 (Nexperia USA Inc.)

The PSMN2R0-30PL,127 represents the highest performance option with 100A continuous drain current and 211W power dissipation capability. This device is classified as obsolete but maintains full ROHS3 compliance and MSL 1 rating. The extremely low on-resistance (2.1 mOhm @ 15A, 10V) minimizes conduction losses in high-current applications. The higher gate charge (117 nC @ 10V) and input capacitance (6810 pF @ 12V) require consideration in gate drive circuit design.

All three substitute parts are compliant with ROHS3 and REACH requirements, matching the FDP8880 environmental and regulatory status.

Frequently Asked Questions (FAQ)

Q: Can the IRLB8721PBF directly replace the FDP8880 without circuit modifications?

A: The IRLB8721PBF is electrically compatible with the FDP8880 across all critical parameters: 30V Vdss, N-Channel MOSFET technology, TO-220-3 package, and -55°C to 175°C operating range. The lower gate charge and input capacitance may improve switching performance in existing gate drive circuits without requiring modifications.

Q: What is the difference between the two Nexperia substitute parts?

A: Both PSMN4R3-30PL,127 and PSMN2R0-30PL,127 share the same 30V rating, 100A continuous drain current, and TO-220-3 package. The primary differences are on-resistance (4.3 mOhm vs. 2.1 mOhm), power dissipation (103W vs. 211W), gate charge (41.5 nC vs. 117 nC), and input capacitance (2400 pF vs. 6810 pF). The PSMN2R0-30PL,127 is optimized for lowest conduction losses, while the PSMN4R3-30PL,127 offers a balance between performance and gate drive requirements.

Q: Are all substitute parts available in the same packaging as the FDP8880?

A: All substitute parts use the TO-220-3 or TO-220AB package variant, which are mechanically and electrically compatible with the original FDP8880 TO-220-3 package. Through-hole mounting is maintained across all devices, ensuring PCB compatibility.

Q: Why is the IRLB8721PBF recommended over the Nexperia alternatives?

A: The IRLB8721PBF is the only substitute part with active product status, ensuring long-term availability and manufacturing support. The Nexperia parts, while electrically superior in certain parameters, are classified as obsolete. For new designs and production continuity, the active IRLB8721PBF is the preferred selection.

Q: Do the substitute parts maintain the same thermal characteristics as the FDP8880?

A: All substitute parts operate within the same -55°C to 175°C junction temperature range as the FDP8880. The IRLB8721PBF (65W), PSMN4R3-30PL,127 (103W), and PSMN2R0-30PL,127 (211W) all exceed or match the FDP8880 power dissipation rating (55W), providing equal or improved thermal performance in the same package.

Q: Are there any gate drive circuit considerations when substituting these parts?

A: Gate charge and input capacitance differ across the substitute parts. The IRLB8721PBF has the lowest gate charge (13 nC @ 4.5V) and input capacitance (1077 pF @ 15V), requiring minimal gate drive current. The PSMN2R0-30PL,127 has significantly higher values (117 nC @ 10V and 6810 pF @ 12V), which may require gate drive circuit evaluation for switching frequency and power dissipation compatibility.

Q: Do all parts meet the same compliance and regulatory requirements?

A: All substitute parts are ROHS3 compliant, REACH unaffected, and classified as MSL 1 (Unlimited moisture sensitivity level), matching the FDP8880 environmental and regulatory status. All parts share the same ECCN (EAR99) and HTSUS (8541.29.0095) classifications.

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