FDP8878 N-Channel MOSFET 30V 40A Equivalent & Substitute Parts

Part Overview

The FDP8878 is an N-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage and 40A continuous drain current in a Through Hole TO-220-3 package. This device is part of the PowerTrench® series and is classified as Obsolete. Due to its obsolete status, equivalent and substitute parts from active manufacturers are necessary for new designs and ongoing production requirements. Substitute devices must maintain compatibility across voltage ratings, current handling capability, thermal characteristics, and package form factor while meeting modern compliance standards.

Substiute Parts

FDP8878
onsemiIn Stock: 23292FDP8878 Datasheet
FDP8878
Current Part
IRL3803PBF
Infineon TechnologiesIn Stock: 10139IRL3803PBF Datasheet
IRL3803PBF
Similar
PSMN022-30PL,127
Nexperia USA Inc.In Stock: 9036PSMN022-30PL,127 Datasheet
PSMN022-30PL,127
Similar
PSMN2R0-30PL,127
Nexperia USA Inc.In Stock: 10287PSMN2R0-30PL,127 Datasheet
PSMN2R0-30PL,127
Similar
PSMN4R3-30PL,127
Nexperia USA Inc.In Stock: 5627PSMN4R3-30PL,127 Datasheet
PSMN4R3-30PL,127
Similar

Key Parameters

Parameter FDP8878 Value Unit
Drain-to-Source Voltage (Vdss) 30 V
Continuous Drain Current (Id) @ 25°C 40 A
On-State Resistance (Rds On Max) @ 40A, 10V 15 mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 250µA 2.5 V
Gate Charge (Qg Max) @ 10V 23 nC
Input Capacitance (Ciss Max) @ 15V 1235 pF
Power Dissipation (Max) 40.5 W
Operating Temperature Range -55 to 175 °C
Package Type TO-220-3 Through Hole
FET Type N-Channel
Technology MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the FDP8878 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Drain-to-Source Voltage (Vdss): Must equal or exceed 30V
  • Continuous Drain Current (Id): Must equal or exceed 40A at 25°C
  • Package Type: Must be Through Hole TO-220-3 or compatible variant (TO-220AB)
  • FET Type: Must be N-Channel
  • Technology: Must be MOSFET (Metal Oxide)
  • Operating Temperature Range: Must span -55°C to 175°C minimum

Secondary Compatibility Parameters:

  • On-State Resistance (Rds On): Lower values indicate improved performance but do not disqualify substitutes
  • Gate Charge (Qg): Affects switching speed; higher values acceptable if electrical ratings are met
  • Input Capacitance (Ciss): Affects gate drive requirements; variation acceptable within application tolerance
  • Power Dissipation: Higher ratings provide thermal margin

Substitute parts are grouped into two categories: Direct Current Rating Matches (40A nominal) and Higher Current Capability (100A and above), which provide enhanced thermal and current handling margins while maintaining voltage and package compatibility.

Parameter Comparison

Parameter FDP8878 PSMN022-30PL,127 PSMN4R3-30PL,127 PSMN2R0-30PL,127 IRL3803PBF
Manufacturer onsemi Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Infineon Technologies
Vdss (V) 30 30 30 30 30
Id @ 25°C (A) 40 30 100 100 140
Rds On Max (mOhm) 15 @ 40A, 10V 22 @ 5A, 10V 4.3 @ 15A, 10V 2.1 @ 15A, 10V 6 @ 71A, 10V
Vgs(th) Max (V) 2.5 @ 250µA 2.15 @ 1mA 2.15 @ 1mA 2.15 @ 1mA 1 @ 250µA
Qg Max (nC) 23 @ 10V 9 @ 10V 41.5 @ 10V 117 @ 10V 140 @ 4.5V
Ciss Max (pF) 1235 @ 15V 447 @ 15V 2400 @ 12V 6810 @ 12V 5000 @ 25V
Power Dissipation Max (W) 40.5 41 103 211 200
Operating Temperature (°C) -55 to 175 -55 to 175 -55 to 175 -55 to 175 -55 to 175
Package TO-220-3 TO-220AB TO-220AB TO-220AB TO-220AB
Product Status Obsolete Obsolete Obsolete Obsolete Not For New Designs
RoHS Status Not specified ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant Not specified

Engineering Selection Recommendations

For Direct Current Rating Equivalence:

PSMN022-30PL,127 provides the closest current rating match at 30A continuous drain current. This device maintains the 30V voltage rating and TO-220AB package compatibility. However, this part is classified as Obsolete and does not provide current margin above the FDP8878 specification. PSMN022-30PL,127 is ROHS3 Compliant, offering improved environmental compliance compared to the original FDP8878.

For Enhanced Current Capability with Thermal Margin:

PSMN4R3-30PL,127 and PSMN2R0-30PL,127 both provide 100A continuous drain current rating, delivering 2.5× current capability over the FDP8878. Both maintain 30V voltage rating and TO-220AB package compatibility. PSMN4R3-30PL,127 offers lower on-state resistance (4.3 mOhm) and reduced gate charge (41.5 nC), while PSMN2R0-30PL,127 provides superior on-state resistance (2.1 mOhm) with higher gate charge (117 nC). Both are ROHS3 Compliant and classified as Obsolete.

For Active Production Status:

IRL3803PBF, manufactured by Infineon Technologies, is classified as Not For New Designs but represents the only active-status alternative in this comparison. This device provides 140A continuous drain current, 30V voltage rating, and TO-220AB package compatibility. The IRL3803PBF exhibits lower on-state resistance (6 mOhm @ 71A) and significantly higher gate charge (140 nC @ 4.5V) compared to the FDP8878. This part is REACH Unaffected and EAR99 classified.

Compliance Considerations:

All substitute parts maintain REACH Unaffected status and EAR99 ECCN classification, consistent with the original FDP8878. Nexperia devices (PSMN series) provide ROHS3 Compliance certification. Moisture Sensitivity Level (MSL) is 1 (Unlimited) across all parts, indicating no moisture sensitivity constraints.

Frequently Asked Questions (FAQ)

Q: Can PSMN022-30PL,127 be used as a direct replacement for FDP8878?

A: PSMN022-30PL,127 meets the minimum electrical requirements: 30V Vdss, 30A continuous drain current (below the 40A specification), and compatible TO-220AB package. However, this part provides no current margin and is rated at 30A versus the FDP8878's 40A specification. Application-specific current requirements must be evaluated before selection.

Q: What is the advantage of selecting PSMN4R3-30PL,127 or PSMN2R0-30PL,127 over PSMN022-30PL,127?

A: Both 100A-rated devices provide 2.5× current capability margin above the FDP8878 specification. PSMN4R3-30PL,127 offers lower gate charge (41.5 nC) for faster switching, while PSMN2R0-30PL,127 provides superior on-state resistance (2.1 mOhm) for reduced conduction losses. Higher current ratings enable thermal margin in applications approaching the 40A limit.

Q: Is IRL3803PBF suitable for new designs?

A: IRL3803PBF is classified as Not For New Designs by Infineon Technologies. While it meets all electrical and package requirements, this status indicates the manufacturer does not recommend it for new product development. Existing designs currently using this device may continue operation, but alternative active-status devices should be evaluated for new applications.

Q: Are all substitute parts ROHS3 Compliant?

A: Nexperia devices (PSMN022-30PL,127, PSMN4R3-30PL,127, PSMN2R0-30PL,127) are ROHS3 Compliant. IRL3803PBF RoHS status is not specified in the provided data. The original FDP8878 RoHS status is not specified. Compliance verification with specific procurement requirements is necessary.

Q: What is the difference between TO-220-3 and TO-220AB packages?

A: Both are Through Hole TO-220 variants with identical pin configurations and mechanical compatibility. TO-220-3 and TO-220AB are functionally interchangeable in standard PCB layouts. Pin spacing, lead length, and thermal characteristics remain consistent across these package designations.

Q: How does gate charge affect device selection?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. FDP8878 specifies 23 nC @ 10V. PSMN022-30PL,127 requires only 9 nC, enabling faster switching with lower gate drive power. PSMN2R0-30PL,127 requires 117 nC, demanding higher gate drive capability. Gate drive circuit design must accommodate the selected device's gate charge specification.

Q: Can these devices be used interchangeably in existing FDP8878 applications?

A: Electrical compatibility (voltage, current, temperature range) is established across all substitute parts. However, differences in on-state resistance, gate charge, and input capacitance may affect circuit performance. Gate drive circuits, thermal management, and switching frequency characteristics must be verified for each substitute device before implementation.

Q: What is the significance of Moisture Sensitivity Level (MSL) 1?

A: MSL 1 (Unlimited) indicates no moisture sensitivity constraints. These devices do not require special moisture-controlled storage or handling procedures. Standard component storage conditions are applicable to all parts in this comparison.

Request Quote (Ships tomorrow)