FDP8874 N-Channel MOSFET 30V 16A/114A TO-220-3 Equivalent & Substitute Parts

Part Overview

The FDP8874 is an N-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage with continuous drain current of 16A at Ta (ambient temperature) and 114A at Tc (case temperature). This device is packaged in TO-220-3 through-hole configuration and belongs to the PowerTrench® series. The FDP8874 is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support, production continuity, and system maintenance. Substitute parts must maintain compatibility across voltage ratings, current handling capability, thermal characteristics, and package form factor to ensure functional equivalence in existing applications.

Substiute Parts

FDP8874

onsemiIn Stock: 15188FDP8874 Datasheet

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IPP042N03LGXKSA1

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IPP055N03LGXKSA1

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IRFZ14PBF

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IRL7833PBF

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IRLB8748PBF

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PSMN2R0-30PL,127

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PSMN4R3-30PL,127

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the FDP8874 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 30V
• Continuous Drain Current @ Tc: Must equal or exceed 114A to maintain thermal and current handling equivalence
• Package Type: Must be TO-220-3 through-hole configuration
• FET Type: Must be N-Channel
• Technology: Must be MOSFET (Metal Oxide)
• Operating Temperature Range: Must encompass -55°C to 175°C

Secondary Compatibility Parameters:

• On-State Resistance (Rds On): Lower values indicate improved performance; values within ±20% of original are acceptable
• Gate Threshold Voltage (Vgs(th)): Must be within ±0.3V of original specification
• Gate Charge (Qg): Lower values reduce switching losses; values within ±50% are acceptable
• Input Capacitance (Ciss): Lower values reduce gate drive requirements; values within ±30% are acceptable
• Power Dissipation: Must equal or exceed 110W to handle thermal load

Compliance Requirements:

• RoHS3 Compliance: Required
• Moisture Sensitivity Level (MSL): Must be 1 (Unlimited)
• REACH Status: Must be unaffected or compliant
• Product Status: Active or Not For New Designs acceptable; Obsolete status acceptable for direct replacement

Substitute parts are grouped based on whether they meet all primary criteria and maintain acceptable secondary parameter ranges. Parts that deviate significantly from primary criteria are excluded from direct substitution consideration.

Parameter Comparison

Engineering Selection Recommendations

Direct Substitution Candidates:

The following parts meet all primary substitution criteria and maintain acceptable secondary parameter ranges for direct replacement of the FDP8874:

IRLB8748PBF (Infineon Technologies, Active Status) This part is the preferred substitute. It maintains 30V Vdss rating with 92A continuous drain current at Tc, representing 81% of the original FDP8874 specification. The on-state resistance of 4.8 mOhm at 40A, 10V is within acceptable tolerance of the original 5.3 mOhm. Gate charge is significantly reduced to 23 nC, improving switching efficiency. Input capacitance is reduced to 2139 pF, lowering gate drive requirements. Power dissipation rating of 75W is lower than the original 110W but remains adequate for most applications operating within the 92A current envelope. Active product status ensures ongoing availability and support.

PSMN2R0-30PL,127 (Nexperia USA Inc., Obsolete Status) This part maintains 30V Vdss with 100A continuous drain current at Tc, representing 88% of the original specification. On-state resistance of 2.1 mOhm at 15A, 10V is superior to the original. Power dissipation rating of 211W significantly exceeds the original 110W, providing thermal margin. Gate charge of 117 nC is elevated compared to the original 72 nC, increasing switching losses. Input capacitance of 6810 pF is substantially higher, increasing gate drive requirements. Obsolete status limits future availability.

PSMN4R3-30PL,127 (Nexperia USA Inc., Obsolete Status) This part maintains 30V Vdss with 100A continuous drain current at Tc, representing 88% of the original specification. On-state resistance of 4.3 mOhm at 15A, 10V is comparable to the original. Power dissipation rating of 103W is within 6% of the original 110W. Gate charge of 41.5 nC is reduced compared to the original 72 nC. Input capacitance of 2400 pF is within acceptable range. Obsolete status limits future availability.

Secondary Substitution Candidates (Current Derating Required):

IPP042N03LGXKSA1 (Infineon Technologies, Not For New Designs) This part maintains 30V Vdss but provides only 70A continuous drain current at Tc, representing 61% of the original specification. This represents significant current derating and is suitable only for applications where the actual operating current does not exceed 70A. On-state resistance of 4.2 mOhm is favorable. Power dissipation of 79W is lower than the original. Gate charge of 38 nC is reduced. Not recommended for applications requiring the full 114A capability.

IPP055N03LGXKSA1 (Infineon Technologies, Not For New Designs) This part maintains 30V Vdss but provides only 50A continuous drain current at Tc, representing 44% of the original specification. This represents substantial current derating and is suitable only for applications where the actual operating current does not exceed 50A. On-state resistance of 5.5 mOhm is comparable to the original. Power dissipation of 68W is lower than the original. Gate charge of 31 nC is reduced. Not recommended for applications requiring the full 114A capability.

IRL7833PBF (Infineon Technologies, Not For New Designs) This part maintains 30V Vdss with 150A continuous drain current at Tc, representing 132% of the original specification. This provides current margin above the original device. On-state resistance of 3.8 mOhm is superior to the original. Power dissipation of 140W exceeds the original 110W. Gate charge of 47 nC is reduced compared to the original 72 nC. Input capacitance of 4170 pF is within acceptable range. Not For New Designs status indicates limited future support.

Excluded Candidates:

IRFZ14PBF (Vishay Siliconix, Active Status) This part does not meet primary substitution criteria. Vdss rating of 60V exceeds the required 30V specification, and continuous drain current of 10A at Tc represents only 9% of the original 114A specification. On-state resistance of 200 mOhm is substantially higher than the original 5.3 mOhm. This device is fundamentally incompatible with FDP8874 applications and is excluded from substitution consideration.

Frequently Asked Questions (FAQ)

Q: Can the IRLB8748PBF directly replace the FDP8874 in all applications?

A: The IRLB8748PBF is suitable for direct replacement in applications where the actual operating drain current does not exceed 92A at case temperature. The device maintains the same 30V voltage rating and TO-220-3 package configuration. On-state resistance and thermal characteristics are comparable. Applications requiring the full 114A capability of the original FDP8874 must evaluate whether the 92A rating of the IRLB8748PBF is sufficient for the specific use case. Active product status ensures ongoing availability.

Q: What is the difference between the TO-220-3 and TO-220AB package designations?

A: Both designations refer to through-hole TO-220 packages with three leads suitable for N-Channel MOSFETs. The primary difference is in the specific lead configuration and mechanical details defined by the manufacturer. Devices in either TO-220-3 or TO-220AB packages are mechanically compatible in standard TO-220 mounting applications, including PCB footprints and heatsink attachment methods. Electrical performance is not affected by this package designation difference.

Q: Why do some substitute parts have lower continuous drain current ratings than the FDP8874?

A: The IPP042N03LGXKSA1 (70A) and IPP055N03LGXKSA1 (50A) represent different design points within the 30V MOSFET family. These devices prioritize lower on-state resistance and reduced gate charge at the expense of lower current ratings. These parts are suitable for applications where the actual operating current is lower than the FDP8874 specification. Selection depends on the specific current requirements of the application, not on the availability of higher-rated alternatives.

Q: Are all substitute parts RoHS3 compliant and REACH unaffected?

A: All substitute parts listed in this document are RoHS3 compliant and REACH unaffected, matching the compliance status of the original FDP8874. All devices have MSL rating of 1 (Unlimited), indicating no moisture sensitivity restrictions. This ensures that substitution does not introduce compliance or environmental concerns.

Q: What is the significance of "Product Status: Obsolete" or "Not For New Designs"?

A: Product Status indicates the manufacturer's support level for the device. Obsolete status means the manufacturer has discontinued the product and no longer manufactures it; existing inventory may be available from distributors. Not For New Designs status means the manufacturer recommends against using the device in new designs but may continue limited production for existing customers. Active status indicates the manufacturer actively supports the product with ongoing production and development. For the FDP8874 (Obsolete), substitute parts with Active status such as IRLB8748PBF are preferred for long-term design continuity.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the amount of charge required to switch the MOSFET on or off. Lower gate charge reduces the energy required for switching and allows faster switching transitions. The FDP8874 has 72 nC gate charge, while the IRLB8748PBF has 23 nC. Lower gate charge in the substitute part reduces switching losses and allows the use of lower-power gate drive circuits. This is a performance advantage in most applications. Higher gate charge in alternatives such as PSMN2R0-30PL,127 (117 nC) requires more robust gate drive circuitry but does not prevent substitution.

Q: What is the impact of on-state resistance (Rds On) differences?

A: On-state resistance determines the voltage drop across the MOSFET when conducting current, directly affecting power dissipation and heat generation. Lower Rds On values reduce power loss. The FDP8874 has 5.3 mOhm at 40A, 10V. Substitute parts with lower Rds On values such as PSMN2R0-30PL,127 (2.1 mOhm) or IRL7833PBF (3.8 mOhm) reduce power dissipation and improve efficiency. Substitute parts with comparable or slightly higher Rds On values such as IRLB8748PBF (4.8 mOhm) maintain similar thermal performance. Rds On differences within ±20% are generally acceptable for direct substitution.

Q: Can substitute parts with higher power dissipation ratings be used in place of the FDP8874?

A: Yes. Substitute parts with higher power dissipation ratings such as PSMN2R0-30PL,127 (211W) or IRL7833PBF (140W) compared to the original FDP8874 (110W) provide additional thermal margin and are suitable for direct replacement. Higher power dissipation ratings indicate improved thermal performance and allow operation at higher currents or ambient temperatures without exceeding junction temperature limits. This is a performance advantage and does not introduce compatibility issues.

Q: What considerations apply when substituting parts with lower power dissipation ratings?

A: Substitute parts with lower power dissipation ratings such as IPP042N03LGXKSA1 (79W) or IPP055N03LGXKSA1 (68W) compared to the original FDP8874 (110W) require careful thermal analysis. These devices have lower current ratings and are suitable only for applications where the actual operating current and power dissipation do not exceed the substitute part's specifications. Thermal management design must account for the lower power dissipation rating. These parts are not suitable for applications requiring the full thermal capability of the original device.