FDP8870 N-Channel 30V 156A MOSFET Equivalent & Substitute Parts

Part Overview

The FDP8870 is an N-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage with 156A continuous drain current (Tc) and 160W maximum power dissipation. The device is packaged in TO-220-3 through-hole configuration and operates across the temperature range of -55°C to 175°C. This part is classified as obsolete, making equivalent and substitute parts necessary for ongoing production and maintenance applications. The FDP8870 belongs to the PowerTrench® series and is ROHS3 compliant with unlimited moisture sensitivity level.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C (Tc)	156	A
Power Dissipation (Max) @ Tc	160	W
On-Resistance (Rds On Max) @ 35A, 10V	4.1	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 250µA	2.5	V
Gate Charge (Qg Max) @ 10V	132	nC
Input Capacitance (Ciss Max) @ 15V	5200	pF
Operating Temperature Range	-55 to 175	°C
Package Type	TO-220-3	Through Hole
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the FDP8870 is determined by strict adherence to the following electrical and mechanical parameters:

Critical Matching Parameters:

Drain-to-Source Voltage (Vdss): Must equal 30V
Package Type: Must be TO-220-3 through-hole configuration
FET Type: Must be N-Channel
Technology: Must be MOSFET (Metal Oxide)
Operating Temperature Range: Must support -55°C to 175°C minimum
RoHS Compliance: Must be ROHS3 compliant

Functional Compatibility Parameters:

Continuous Drain Current (Id): Substitute must meet or exceed 156A (Tc)
Power Dissipation: Substitute must support minimum 160W (Tc)
On-Resistance (Rds On): Lower values indicate improved performance
Gate Charge (Qg): Lower values reduce switching losses
Input Capacitance (Ciss): Affects gate drive requirements

All substitute parts listed meet the critical matching parameters. Variations in continuous drain current, power dissipation, on-resistance, and gate charge reflect different device architectures and performance characteristics within the same voltage and package class.

Parameter Comparison

Parameter	FDP8870	IPP042N03LGXKSA1	IRL7833PBF	IRLB8743PBF	IRLB8748PBF	PSMN2R0-30PL,127	PSMN3R4-30PL,127	PSMN4R3-30PL,127
Manufacturer	onsemi	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies	Nexperia USA Inc.	Nexperia USA Inc.	Nexperia USA Inc.
Vdss (V)	30	30	30	30	30	30	30	30
Id @ 25°C Tc (A)	156	70	150	78	92	100	100	100
Power Dissipation Max Tc (W)	160	79	140	140	75	211	114	103
Rds On Max @ 10V (mOhm)	4.1	4.2	3.8	3.2	4.8	2.1	3.4	4.3
Vgs(th) Max @ Specified Id (V)	2.5	2.2	2.3	2.35	2.35	2.15	2.15	2.15
Qg Max @ 10V (nC)	132	38	47	54	23	117	64	41.5
Ciss Max @ 15V (pF)	5200	3900	4170	5110	2139	6810	3907	2400
Operating Temperature (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Product Status	Obsolete	Not For New Designs	Not For New Designs	Active	Active	Obsolete	Obsolete	Obsolete

Engineering Selection Recommendations

For Direct Replacement (Highest Compatibility):

The IRLB8748PBF and IRLB8743PBF are classified as Active products, indicating ongoing manufacturer support and availability. Both devices maintain the 30V Vdss rating, TO-220-3 package, and full operating temperature range. IRLB8748PBF provides 92A continuous drain current with 75W power dissipation, while IRLB8743PBF provides 78A with 140W power dissipation. Both are ROHS3 compliant and suitable for new designs.

For High-Current Applications:

The PSMN2R0-30PL,127 delivers 100A continuous drain current with the highest power dissipation rating of 211W (Tc) among the substitutes, combined with the lowest on-resistance of 2.1mOhm. However, this part is classified as Obsolete. The IRLB8748PBF provides a balance of current handling (92A) with Active product status.

For Lower Gate Charge Applications:

The IRLB8748PBF exhibits the lowest gate charge of 23nC at 4.5V, reducing switching losses and gate drive power requirements compared to the FDP8870 (132nC at 10V).

Compliance Considerations:

All substitute parts maintain ROHS3 compliance and unlimited moisture sensitivity level (MSL 1), matching the FDP8870 specifications. All parts are classified under ECCN EAR99 and HTSUS 8541.29.0095.

Frequently Asked Questions (FAQ)

Q: Can the FDP8870 be directly replaced with any of these substitute parts?

A: Direct replacement depends on application requirements. All listed substitutes share the same 30V Vdss rating, TO-220-3 package, and operating temperature range. However, continuous drain current and power dissipation ratings vary. Applications requiring the full 156A capability of the FDP8870 cannot be satisfied by lower-rated substitutes. The PSMN2R0-30PL,127 approaches the original specifications with 100A and 211W, but is obsolete. For new designs, IRLB8748PBF (Active status) is recommended.

Q: What is the significance of Product Status (Active vs. Obsolete vs. Not For New Designs)?

A: Product Status indicates manufacturer support level. Active products receive ongoing support, manufacturing, and availability guarantees. Not For New Designs indicates the manufacturer no longer recommends the part for new applications but may continue limited production. Obsolete parts have been discontinued and availability is limited to existing inventory. For long-term reliability, Active products are preferred.

Q: How do on-resistance (Rds On) differences affect circuit performance?

A: Lower on-resistance reduces conduction losses and heat generation. The PSMN2R0-30PL,127 (2.1mOhm) generates less heat than the FDP8870 (4.1mOhm) at equivalent current levels. However, lower on-resistance typically correlates with higher gate charge, requiring more sophisticated gate drive circuits.

Q: What does gate charge (Qg) represent and why does it vary among substitutes?

A: Gate charge is the total charge required to switch the MOSFET from off to on state. Higher gate charge (FDP8870: 132nC) requires more gate drive power and increases switching losses. Lower gate charge (IRLB8748PBF: 23nC) reduces switching losses but may indicate different internal architecture. Selection depends on gate drive circuit capabilities and switching frequency requirements.

Q: Are all substitute parts available in the same packaging?

A: Yes, all listed substitutes use TO-220-3 through-hole packaging, matching the FDP8870. However, some suppliers provide different package designations (TO-220AB vs. PG-TO220-3) which are functionally equivalent TO-220-3 configurations. Pin assignments and mechanical dimensions remain identical.

Q: Can I use a substitute with lower continuous drain current rating?

A: Substitutes with lower Id ratings (such as IPP042N03LGXKSA1 at 70A) cannot be used in applications requiring the full 156A capability of the FDP8870. Current rating must meet or exceed application requirements. Using an undersized device results in excessive heat generation and potential thermal failure.

Q: What is the impact of input capacitance (Ciss) differences?

A: Input capacitance affects gate drive circuit design and switching speed. Higher Ciss (FDP8870: 5200pF, PSMN2R0-30PL,127: 6810pF) requires stronger gate drive circuits. Lower Ciss (IRLB8748PBF: 2139pF) allows faster switching with reduced gate drive requirements. Selection depends on available gate drive current and desired switching frequency.

Q: Are all substitutes RoHS compliant?

A: Yes, all listed substitute parts are ROHS3 compliant, matching the FDP8870. All parts are also REACH Unaffected and classified under ECCN EAR99, maintaining regulatory equivalence.

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