FDP8443-F085 Equivalent & Substitute Parts

Part Overview

The FDP8443-F085 is an N-Channel MOSFET manufactured by onsemi, rated for 40V drain-to-source voltage with 20A continuous drain current at Ta and 80A at Tc. This device is packaged in TO-220-3 through-hole configuration and is part of the PowerTrench® series. The part is currently listed as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, thermal characteristics, and package form factor while meeting automotive-grade qualification standards.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	40	V
Continuous Drain Current @ Tc	80	A
Gate-Source Voltage (Vgs Max)	±20	V
On-State Resistance (Rds On) @ 80A, 10V	3.5	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	185	nC
Power Dissipation (Max)	188	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-220-3	Through Hole
Grade	Automotive	AEC-Q101

Substitute Part Grouping Explanation

Substitution eligibility for the FDP8443-F085 is determined by the following critical parameters:

Mandatory Matching Criteria:

Drain-to-Source Voltage (Vdss): 40V minimum
Continuous Drain Current (Id @ Tc): 80A minimum
Gate-Source Voltage (Vgs Max): ±20V
Package Type: TO-220-3 through-hole configuration
Operating Temperature Range: -55°C to 175°C minimum
FET Type: N-Channel MOSFET

Performance Considerations:

On-State Resistance (Rds On): Lower values indicate improved efficiency and reduced power dissipation
Gate Charge (Qg): Lower values enable faster switching characteristics
Power Dissipation (Max): Higher ratings provide thermal margin

The substitute parts listed below meet or exceed the mandatory electrical and thermal specifications of the FDP8443-F085, ensuring functional compatibility in applications requiring N-Channel 40V MOSFETs with 80A continuous drain current capability in TO-220-3 packaging.

Parameter Comparison

Parameter	FDP8443-F085	IPP023N04NGXKSA1	IPP039N04LGXKSA1	IPP041N04NGXKSA1	PSMN2R2-40PS,127	PSMN4R5-40PS,127
Manufacturer	onsemi	Infineon Technologies	Infineon Technologies	Infineon Technologies	Nexperia USA Inc.	Nexperia USA Inc.
Vdss (V)	40	40	40	40	40	40
Id @ Tc (A)	80	90	80	80	100	100
Rds On @ 10V (mOhm)	3.5	2.3	3.9	4.1	2.1	4.6
Vgs(th) (V)	4	4	2	4	4	4
Qg @ 10V (nC)	185	120	78	56	130	42.3
Ciss @ Vds (pF)	9310 @ 25V	10000 @ 20V	6100 @ 25V	4500 @ 20V	8423 @ 20V	2683 @ 12V
Power Dissipation Max (W)	188	167	94	94	306	148
Operating Temperature (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	TO-220-3	PG-TO220-3	PG-TO220-3-1	PG-TO220-3-1	TO-220AB	TO-220AB
Product Status	Obsolete	Active	Not For New Designs	Active	Obsolete	Obsolete
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Recommendation: IPP041N04NGXKSA1

The IPP041N04NGXKSA1 from Infineon Technologies is the preferred substitute for the FDP8443-F085. This device meets all mandatory electrical specifications with 40V Vdss, 80A continuous drain current at Tc, and TO-220-3 package compatibility. The part carries Active product status, ensuring long-term availability and supply chain stability. RoHS3 compliance and AEC-Q101 automotive qualification align with the original part's environmental and reliability standards. The lower gate charge (56 nC) and input capacitance (4500 pF) provide improved switching performance compared to the original device.

Secondary Recommendation: IPP023N04NGXKSA1

The IPP023N04NGXKSA1 offers enhanced current handling at 90A continuous drain current, providing additional thermal margin for applications approaching the 80A specification limit. This Infineon OptiMOS™ device features superior on-state resistance (2.3 mOhm) and reduced gate charge (120 nC), resulting in lower power dissipation and faster switching. Active product status ensures availability. The higher current rating makes this part suitable for designs requiring performance headroom.

Alternative Consideration: PSMN2R2-40PS,127

The PSMN2R2-40PS,127 from Nexperia USA Inc. provides the highest power dissipation rating (306W) and current handling (100A), offering maximum thermal performance. However, this part carries Obsolete product status, limiting its suitability for new designs or long-term procurement. The superior on-state resistance (2.1 mOhm) and gate charge (130 nC) characteristics make it suitable only for existing production requiring continuity.

Not Recommended: IPP039N04LGXKSA1 and PSMN4R5-40PS,127

IPP039N04LGXKSA1 carries Not For New Designs status, restricting its use to legacy applications only. PSMN4R5-40PS,127 is Obsolete, limiting procurement viability. Both parts should be avoided for new designs or long-term production commitments.

Frequently Asked Questions (FAQ)

Q: Can the IPP041N04NGXKSA1 directly replace the FDP8443-F085 without circuit modifications?

A: Yes. The IPP041N04NGXKSA1 meets all mandatory electrical parameters: 40V Vdss, 80A continuous drain current at Tc, ±20V Vgs rating, and TO-220-3 package configuration. Operating temperature range (-55°C to 175°C) and gate-source voltage specifications are identical. Direct substitution is electrically compatible.

Q: What is the difference between TO-220-3 and TO-220AB packaging?

A: Both are through-hole TO-220 packages with three leads suitable for TO-220-3 applications. The designations reflect manufacturer-specific package nomenclature. Mechanical compatibility and pin configuration are equivalent for circuit board mounting and thermal management purposes.

Q: Why does the IPP023N04NGXKSA1 have higher continuous drain current (90A) than the FDP8443-F085 (80A)?

A: The IPP023N04NGXKSA1 features improved semiconductor design and thermal characteristics, enabling higher current handling within the same package. This provides additional design margin and thermal headroom for applications operating near the 80A specification limit.

Q: Is the lower gate charge (56 nC) of the IPP041N04NGXKSA1 beneficial compared to the FDP8443-F085 (185 nC)?

A: Lower gate charge reduces the energy required to switch the MOSFET on and off, resulting in faster switching transitions and reduced switching losses. This improves overall circuit efficiency and thermal performance, particularly in high-frequency switching applications.

Q: Should I use PSMN2R2-40PS,127 or PSMN4R5-40PS,127 for new designs?

A: Neither part is recommended for new designs. Both carry Obsolete product status, limiting long-term availability and supply chain support. Use IPP041N04NGXKSA1 (Active status) or IPP023N04NGXKSA1 (Active status) for new design implementations.

Q: What is the significance of RoHS3 compliance on the substitute parts?

A: RoHS3 compliance indicates the parts meet Restriction of Hazardous Substances regulations, restricting lead, cadmium, mercury, and other hazardous materials. This compliance is essential for applications subject to environmental regulations and ensures compatibility with modern manufacturing and assembly processes.

Q: Can I use the higher power dissipation rating of PSMN2R2-40PS,127 (306W) to improve thermal performance?

A: Higher power dissipation ratings indicate greater thermal capability but do not improve circuit performance. The actual power dissipation in your application is determined by on-state resistance and current levels. The IPP041N04NGXKSA1 or IPP023N04NGXKSA1 provide adequate thermal performance for applications matching the FDP8443-F085 specifications.

Q: Are all substitute parts automotive-grade qualified?

A: The FDP8443-F085 carries AEC-Q101 automotive qualification. The Infineon substitute parts (IPP041N04NGXKSA1, IPP023N04NGXKSA1, IPP039N04LGXKSA1) are automotive-qualified. Nexperia parts (PSMN2R2-40PS,127, PSMN4R5-40PS,127) do not specify automotive qualification in the provided data. Verify automotive compliance requirements for your specific application.

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