FDP8443 N-Channel MOSFET 40V 20A/80A TO-220-3 Equivalent & Substitute Parts

Part Overview

The FDP8443 is an N-Channel MOSFET manufactured by onsemi, rated for 40V drain-to-source voltage with continuous drain current of 20A at Ta and 80A at Tc. This device is packaged in TO-220-3 through-hole configuration and belongs to the PowerTrench® series. The FDP8443 is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support, production continuity, and system maintenance. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, thermal characteristics, and gate drive requirements while accommodating available packaging options.

Key Parameters

Parameter	FDP8443 Value	Unit
FET Type	N-Channel	—
Drain-to-Source Voltage (Vdss)	40	V
Continuous Drain Current @ Tc	80	A
Rds(on) Max @ 80A, 10V	3.5	mOhm
Gate Threshold Voltage @ 250µA	4	V
Gate Charge @ 10V	185	nC
Power Dissipation Max @ Tc	188	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-220-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the FDP8443 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

FET Type: N-Channel (required)
Drain-to-Source Voltage (Vdss): 40V (required match)
Continuous Drain Current @ Tc: 80A minimum (required minimum)
Gate Drive Voltage: 10V (required compatibility)
Gate Threshold Voltage: 4V nominal (required compatibility)
Operating Temperature Range: -55°C to 175°C (required match)
Package/Mounting: TO-220-3 through-hole (required for direct substitution)

Secondary Compatibility Parameters:

Rds(on) @ 80A, 10V: 3.5mOhm baseline (lower values acceptable)
Gate Charge @ 10V: 185nC baseline (lower values acceptable)
Power Dissipation: 188W baseline (equal or higher values acceptable)

Substitute parts must satisfy all primary criteria. Secondary parameters may vary within acceptable engineering tolerances, with lower Rds(on) and Gate Charge values representing improved performance characteristics. Parts exceeding the baseline power dissipation rating provide thermal margin.

Parameter Comparison

Parameter	FDP8443	IPP041N04NGXKSA1	IRF1404ZPBF	IRF2204PBF	IRL40B215	Unit
Manufacturer	onsemi	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies	—
Product Status	Obsolete	Active	Active	Active	Obsolete	—
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	—
Vdss	40	40	40	40	40	V
Continuous Drain Current @ Tc	80	80	180	210	120	A
Rds(on) Max @ 10V	3.5 @ 80A	4.1 @ 80A	3.7 @ 75A	3.6 @ 130A	2.7 @ 98A	mOhm
Gate Threshold Voltage	4 @ 250µA	4 @ 45µA	4 @ 250µA	4 @ 250µA	2.4 @ 100µA	V
Gate Charge @ 10V	185	56	150	200	84	nC
Power Dissipation Max @ Tc	188	94	200	330	143	W
Operating Temperature Range	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	°C
Package Type	TO-220-3	PG-TO220-3-1	TO-220AB	TO-220AB	TO-220AB	—
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	—
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	—

Engineering Selection Recommendations

IPP041N04NGXKSA1 (Infineon Technologies)

This part is the closest electrical equivalent to the FDP8443. It maintains identical Vdss (40V) and Tc drain current (80A) ratings with compatible gate drive characteristics. The IPP041N04NGXKSA1 is classified as Active, ensuring long-term availability and manufacturing support. It features ROHS3 compliance and carries REACH Unaffected status. The Rds(on) of 4.1mOhm at 80A, 10V is marginally higher than the FDP8443 baseline, representing a negligible performance difference. Gate charge is significantly lower at 56nC, providing improved switching efficiency. The PG-TO220-3-1 package is mechanically compatible with TO-220-3 footprints. This part is recommended as the primary substitute for direct replacement applications.

IRF1404ZPBF (Infineon Technologies)

This HEXFET® device provides enhanced current handling at 180A continuous drain current, exceeding the FDP8443 specification by 2.25 times. Vdss remains at 40V with full gate drive compatibility. The IRF1404ZPBF is Active status with ROHS3 compliance. Rds(on) of 3.7mOhm at 75A, 10V is superior to the FDP8443 baseline. Power dissipation rating of 200W exceeds the FDP8443 by 12W, providing thermal margin. The TO-220AB package is mechanically compatible with TO-220-3 applications. This part is suitable for applications requiring higher current capacity or improved thermal performance within the same voltage class.

IRF2204PBF (Infineon Technologies)

This HEXFET® device offers the highest current rating among substitutes at 210A continuous drain current. Vdss is maintained at 40V with compatible gate drive specifications. The IRF2204PBF is Active status with ROHS3 compliance. Rds(on) of 3.6mOhm at 130A, 10V provides superior on-state performance. Power dissipation rating of 330W significantly exceeds the FDP8443, offering substantial thermal headroom. The TO-220AB package is mechanically compatible. This part is selected for applications demanding maximum current capacity and thermal performance within the 40V voltage class.

IRL40B215 (Infineon Technologies)

This HEXFET® and StrongIRFET™ device is classified as Obsolete, matching the FDP8443 status. It provides 120A continuous drain current at Tc, exceeding the FDP8443 by 50%. Vdss is 40V with compatible gate drive at 10V. Rds(on) of 2.7mOhm at 98A, 10V is superior to the FDP8443 baseline. Gate charge of 84nC at 4.5V is significantly lower, improving switching characteristics. The TO-220AB package is mechanically compatible. ROHS3 compliance and REACH Unaffected status are confirmed. This part is suitable for applications where obsolete component replacement is acceptable and improved performance characteristics are beneficial.

Frequently Asked Questions (FAQ)

Q: Can the IPP041N04NGXKSA1 directly replace the FDP8443 in existing designs?

A: Yes. The IPP041N04NGXKSA1 maintains identical Vdss (40V) and Tc drain current (80A) ratings with compatible gate drive voltage (10V) and threshold voltage (4V). The PG-TO220-3-1 package is mechanically compatible with TO-220-3 footprints. The marginally higher Rds(on) (4.1mOhm vs. 3.5mOhm) represents acceptable performance variation. This part is recommended as the primary direct replacement.

Q: What is the difference between TO-220-3 and TO-220AB packages?

A: Both packages are through-hole mounted with three leads and are mechanically compatible for PCB footprint purposes. TO-220-3 and TO-220AB designations refer to variant specifications within the TO-220 family. All substitute parts listed use TO-220-3 or TO-220AB packages, both suitable for applications originally designed for the FDP8443 TO-220-3 package.

Q: Why do some substitute parts have higher drain current ratings than the FDP8443?

A: The IRF1404ZPBF (180A), IRF2204PBF (210A), and IRL40B215 (120A) exceed the FDP8443 80A rating. These parts satisfy the primary substitution criterion of 80A minimum continuous drain current at Tc. Higher current ratings provide design flexibility and thermal margin without compromising compatibility. Selection depends on application requirements.

Q: Are all substitute parts ROHS3 compliant?

A: The IPP041N04NGXKSA1, IRF1404ZPBF, IRF2204PBF, and IRL40B215 are all ROHS3 compliant. The FDP8443 does not specify RoHS status. All parts carry REACH Unaffected designation, confirming regulatory compliance for industrial and commercial applications.

Q: What does "Obsolete" product status mean for the FDP8443 and IRL40B215?

A: Obsolete status indicates that these parts are no longer in active production. The FDP8443 is obsolete, necessitating substitute identification. The IRL40B215 is also obsolete but remains available from existing inventory. For long-term design support and production continuity, Active status parts (IPP041N04NGXKSA1, IRF1404ZPBF, IRF2204PBF) are preferred.

Q: How does gate charge affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Lower gate charge reduces switching losses and improves efficiency. The IPP041N04NGXKSA1 (56nC) and IRL40B215 (84nC) have significantly lower gate charge than the FDP8443 (185nC), providing improved switching performance. The IRF1404ZPBF (150nC) and IRF2204PBF (200nC) offer moderate improvements.

Q: Can I use a substitute part with higher power dissipation rating?

A: Yes. Higher power dissipation ratings (IRF1404ZPBF at 200W, IRF2204PBF at 330W) indicate improved thermal performance and provide design margin. These parts are suitable for applications where thermal management is critical. The lower Rds(on) values of these parts also reduce on-state power losses.

Q: What is the significance of Rds(on) matching between the FDP8443 and substitutes?

A: Rds(on) determines on-state voltage drop and power dissipation. The FDP8443 baseline is 3.5mOhm at 80A, 10V. The IPP041N04NGXKSA1 at 4.1mOhm represents a 17% increase, which is acceptable for most applications. The IRL40B215 at 2.7mOhm represents a 23% improvement. Lower Rds(on) values reduce heat generation and improve efficiency.

Q: Are gate threshold voltage differences significant?

A: Gate threshold voltage (Vgs(th)) determines the gate voltage required to initiate conduction. The FDP8443, IRF1404ZPBF, and IRF2204PBF all specify 4V at 250µA, ensuring compatible gate drive circuits. The IPP041N04NGXKSA1 specifies 4V at 45µA, and the IRL40B215 specifies 2.4V at 100µA. These variations are within acceptable engineering tolerances for standard gate drive implementations.

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