FDP8442 N-Channel MOSFET 40V 23A/80A TO-220-3 Equivalent & Substitute Parts

Part Overview

The FDP8442 is an N-Channel MOSFET manufactured by onsemi, rated for 40V drain-to-source voltage with continuous drain current of 23A at Ta (ambient temperature) and 80A at Tc (case temperature). This device is packaged in TO-220-3 through-hole configuration and belongs to the PowerTrench® series. The FDP8442 is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support, production continuity, and system maintenance. Substitute parts must maintain compatibility across critical electrical parameters including voltage rating, current handling capability, on-resistance characteristics, and thermal performance while accommodating the through-hole TO-220-3 package format.

Key Parameters

Parameter	FDP8442 Specification	Unit
Drain-to-Source Voltage (Vdss)	40	V
Continuous Drain Current @ 25°C (Ta)	23	A
Continuous Drain Current @ 25°C (Tc)	80	A
On-Resistance (Rds On) @ 80A, 10V	3.1	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	235	nC
Input Capacitance (Ciss) @ 25V	12200	pF
Power Dissipation (Tc)	254	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-220-3	Through Hole
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitute parts for the FDP8442 are selected based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:

Mandatory Matching Criteria:

Drain-to-Source Voltage (Vdss): 40V minimum
Package Type: TO-220-3 through-hole configuration
FET Type: N-Channel MOSFET
Operating Temperature Range: -55°C to 175°C minimum

Performance Compatibility Criteria:

Continuous Drain Current (Tc): 80A or greater
On-Resistance (Rds On): 3.1 mOhm or lower at rated current and 10V gate drive
Gate Threshold Voltage: 4V or lower for compatible gate drive requirements
Power Dissipation: 254W or greater at case temperature

Substitute parts are grouped into two categories: Direct Equivalents (matching all primary parameters within tight tolerances) and Functional Alternatives (meeting or exceeding performance specifications with acceptable trade-offs in secondary parameters such as gate charge or input capacitance).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ Tc (A)	Rds On @ 10V (mOhm)	Vgs(th) @ 250µA (V)	Qg @ 10V (nC)	Ciss @ 25V (pF)	Pd @ Tc (W)	Package	Product Status
FDP8442	onsemi	40	80	3.1	4	235	12200	254	TO-220-3	Obsolete
AOT240L	Alpha & Omega Semiconductor	40	105	2.9	2.2	72	4300	176	TO-220-3	Not For New Designs
IPP023N04NGXKSA1	Infineon Technologies	40	90	2.3	4	120	10000	167	TO-220-3	Active
IPP039N04LGXKSA1	Infineon Technologies	40	80	3.9	2	78	6100	94	TO-220-3	Not For New Designs
IPP041N04NGXKSA1	Infineon Technologies	40	80	4.1	4	56	4500	94	TO-220-3	Active
IPP100N04S303AKSA1	Infineon Technologies	40	100	2.8	4	145	9600	214	TO-220-3	Last Time Buy
IRF1404PBF	Infineon Technologies	40	202	4	4	196	5669	333	TO-220-3	Not For New Designs
IRF1404ZPBF	Infineon Technologies	40	180	3.7	4	150	4340	200	TO-220-3	Active
IRF1405PBF	Infineon Technologies	55	169	5.3	4	260	5480	330	TO-220-3	Active
IRF2204PBF	Infineon Technologies	40	210	3.6	4	200	5890	330	TO-220-3	Active
IRF2804PBF	Infineon Technologies	40	75	2.3	4	240	6450	300	TO-220-3	Active

Engineering Selection Recommendations

Primary Substitutes (Closest Electrical Match):

The IPP041N04NGXKSA1 (Infineon Technologies, Active status) and IPP023N04NGXKSA1 (Infineon Technologies, Active status) represent the most direct functional alternatives to the FDP8442. Both devices maintain the 40V Vdss rating, support 80A or greater continuous drain current at case temperature, and are packaged in TO-220-3 configuration. The IPP041N04NGXKSA1 matches the FDP8442 at exactly 80A Tc rating with comparable on-resistance performance (4.1 mOhm versus 3.1 mOhm). The IPP023N04NGXKSA1 provides enhanced current capability at 90A Tc with superior on-resistance (2.3 mOhm). Both devices carry Active product status and RoHS3 compliance, supporting long-term design continuity.

Secondary Substitutes (Enhanced Performance):

The IRF1404ZPBF (Infineon Technologies, Active status) and IRF2204PBF (Infineon Technologies, Active status) exceed FDP8442 specifications significantly, offering 180A and 210A continuous drain current respectively at 40V Vdss. These devices provide superior thermal performance (200W and 330W power dissipation) and lower on-resistance characteristics (3.7 mOhm and 3.6 mOhm). Selection of these parts is appropriate when application requirements permit higher current handling or when thermal margin enhancement is beneficial.

Alternative Voltage Rating:

The IRF1405PBF (Infineon Technologies, Active status) operates at 55V Vdss, exceeding the FDP8442 voltage specification. This device is suitable only for applications where the higher voltage rating does not create design conflicts and where the increased on-resistance (5.3 mOhm) is acceptable.

Compliance and Availability:

All recommended active-status substitutes carry RoHS3 compliance and REACH Unaffected status, matching the FDP8442 regulatory profile. Devices marked "Not For New Designs" or "Last Time Buy" are suitable for legacy system support and maintenance applications but should not be selected for new product development.

Frequently Asked Questions (FAQ)

Q: Can the IPP041N04NGXKSA1 directly replace the FDP8442 in existing designs?

A: The IPP041N04NGXKSA1 is electrically compatible with the FDP8442 across all critical parameters: 40V Vdss, 80A Tc rating, TO-220-3 package, and -55°C to 175°C operating range. The on-resistance specification (4.1 mOhm at 80A, 10V) is slightly higher than the FDP8442 (3.1 mOhm), resulting in marginally increased power dissipation. Gate threshold voltage and maximum gate voltage specifications are identical. Direct substitution is supported without circuit modification.

Q: What is the difference between the IPP023N04NGXKSA1 and IPP041N04NGXKSA1?

A: Both devices are Infineon OptiMOS™ series MOSFETs rated for 40V Vdss and packaged in TO-220-3. The IPP023N04NGXKSA1 provides 90A continuous drain current with 2.3 mOhm on-resistance and 120 nC gate charge. The IPP041N04NGXKSA1 provides 80A continuous drain current with 4.1 mOhm on-resistance and 56 nC gate charge. The IPP023N04NGXKSA1 offers higher current capability and lower on-resistance, while the IPP041N04NGXKSA1 features lower gate charge for faster switching applications. Both carry Active product status.

Q: Why is the IRF1405PBF listed as a substitute if it has a different voltage rating?

A: The IRF1405PBF is included in the substitute list because it meets the mandatory package and FET type requirements (TO-220-3, N-Channel MOSFET) and exceeds the current and power dissipation specifications. However, the 55V Vdss rating exceeds the FDP8442 specification of 40V. This device is suitable only for applications where the higher voltage rating does not conflict with circuit design constraints. The increased on-resistance (5.3 mOhm) must also be evaluated against thermal requirements.

Q: Are all substitute parts RoHS compliant?

A: All active-status substitute parts listed (IPP023N04NGXKSA1, IPP041N04NGXKSA1, IRF1404ZPBF, IRF1405PBF, IRF2204PBF, IRF2804PBF) carry RoHS3 compliance certification. Devices marked "Not For New Designs" or "Last Time Buy" also carry RoHS3 compliance. The FDP8442 does not specify RoHS status in the provided data.

Q: What is the significance of gate charge (Qg) differences between substitute parts?

A: Gate charge affects switching speed and gate drive circuit requirements. The FDP8442 specifies 235 nC at 10V. Substitute parts range from 56 nC (IPP041N04NGXKSA1) to 260 nC (IRF1405PBF). Lower gate charge enables faster switching and reduces gate drive power consumption. Higher gate charge requires more robust gate drive circuitry but may provide improved noise immunity. Selection depends on application switching frequency and gate drive capability.

Q: Can I use the AOT240L as a substitute despite its "Not For New Designs" status?

A: The AOT240L meets electrical compatibility requirements (40V Vdss, 105A Tc, TO-220-3 package) and is suitable for legacy system maintenance and repair applications. However, "Not For New Designs" status indicates the manufacturer does not recommend this part for new product development. For ongoing production or new designs, select active-status alternatives such as IPP041N04NGXKSA1 or IPP023N04NGXKSA1.

Q: What thermal considerations apply when selecting a substitute?

A: Power dissipation specifications vary significantly among substitutes. The FDP8442 specifies 254W at case temperature. The IPP041N04NGXKSA1 specifies 94W, while the IRF2204PBF specifies 330W. Lower power dissipation indicates better thermal efficiency at rated current. Selection should account for application duty cycle, heatsink capability, and ambient temperature. Devices with lower on-resistance (such as IPP023N04NGXKSA1 at 2.3 mOhm) generate less heat at continuous current operation.

Q: Are there package variations among the substitute parts?

A: All listed substitute parts are packaged in TO-220-3 through-hole configuration, maintaining mechanical compatibility with the FDP8442. Some manufacturers designate the package as TO-220-3, TO-220AB, or PG-TO220-3, but these represent equivalent through-hole TO-220 packages with identical pin configurations and mounting requirements. No package adapter or modification is required for direct substitution.

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