FDP8441_F085 Equivalent & Substitute Parts

Part Overview

The FDP8441_F085 is an N-Channel MOSFET manufactured by onsemi, rated for 40V drain-to-source voltage with continuous drain current of 23A (Ta) and 80A (Tc). This device is housed in a TO-220-3 through-hole package and is qualified to AEC-Q101 automotive standards. The part is currently listed as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	40	V
Continuous Drain Current @ 25°C	23A (Ta), 80A (Tc)	A
Rds On (Max) @ 80A, 10V	2.7	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	280	nC
Maximum Gate Voltage (Vgs)	±20	V
Input Capacitance (Ciss) @ 25V	15000	pF
Power Dissipation (Max)	300	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-220-3	—
Mounting Type	Through Hole	—
Moisture Sensitivity Level	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the FDP8441_F085 is determined by the following critical parameters:

Mandatory Matching Parameters:

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Package/Case: TO-220-3 (through-hole)
Operating Temperature Range: -55°C to 175°C (TJ)
Maximum Gate Voltage (Vgs): ±20V

Performance Parameters (must meet or exceed):

Continuous Drain Current @ 25°C: minimum 23A (Ta) or 80A (Tc)
Rds On (Max) @ 10V: 2.7 mOhm or lower
Gate Threshold Voltage (Vgs(th)): 4V or lower
Power Dissipation (Max): 300W (Tc) or higher

Substitute parts are grouped into two categories: direct equivalents (identical electrical specifications) and similar alternatives (meeting or exceeding all mandatory parameters while potentially offering improved performance characteristics).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On @ 10V (mOhm)	Vgs(th) @ 250µA (V)	Qg @ 10V (nC)	Ciss @ 20-25V (pF)	Power Diss. (W)	Package	Status
FDP8441_F085	onsemi	40	23 (Ta), 80 (Tc)	2.7 @ 80A	4 @ 250µA	280 @ 10V	15000 @ 25V	300 (Tc)	TO-220-3	Obsolete
FDP8441	Fairchild Semiconductor	40	23 (Ta), 80 (Tc)	2.7 @ 80A	4 @ 250µA	280 @ 10V	15000 @ 25V	300 (Tc)	TO-220-3	Active
PSMN2R8-40PS,127	Nexperia USA Inc.	40	100 (Tc)	2.8 @ 10A	4 @ 1mA	71 @ 10V	4491 @ 20V	211 (Tc)	TO-220AB	Obsolete
AOT240L	Alpha & Omega Semiconductor Inc.	40	20 (Ta), 105 (Tc)	2.9 @ 20A	2.2 @ 250µA	72 @ 10V	4300 @ 20V	1.9 (Ta), 176 (Tc)	TO-220-3	Not For New Designs
IPP023N04NGXKSA1	Infineon Technologies	40	90 (Tc)	2.3 @ 90A	4 @ 95µA	120 @ 10V	10000 @ 20V	167 (Tc)	TO-220-3	Active
IRF1404ZPBF	Infineon Technologies	40	180 (Tc)	3.7 @ 75A	4 @ 250µA	150 @ 10V	4340 @ 25V	200 (Tc)	TO-220AB	Active
PSMN8R0-40PS,127	Nexperia USA Inc.	40	77 (Tc)	7.6 @ 25A	4 @ 1mA	21 @ 10V	1262 @ 12V	86 (Tc)	TO-220AB	Obsolete

Engineering Selection Recommendations

Direct Equivalent (Recommended Primary Substitute):

The FDP8441 manufactured by Fairchild Semiconductor is the direct electrical and mechanical equivalent to the FDP8441_F085. This part maintains identical specifications across all critical parameters including Vdss, continuous drain current, Rds On, gate threshold voltage, and gate charge. The FDP8441 is currently in active production status, ensuring long-term availability and supply chain stability. Both parts share the same TO-220-3 package and PowerTrench® series designation.

Active Production Alternatives:

The IPP023N04NGXKSA1 (Infineon Technologies, OptiMOS™ series) is an active production alternative that exceeds the FDP8441_F085 specifications. It provides 90A continuous drain current (versus 80A), lower Rds On of 2.3 mOhm (versus 2.7 mOhm), and reduced gate charge of 120 nC (versus 280 nC). This device is qualified to ROHS3 compliance and maintains the same 40V Vdss rating and TO-220-3 package configuration.

The IRF1404ZPBF (Infineon Technologies, HEXFET® series) is an active production device offering significantly higher current capability at 180A continuous drain current. While Rds On is slightly higher at 3.7 mOhm, this part provides enhanced thermal performance with 200W power dissipation capability. The device uses a TO-220AB package variant and is ROHS3 compliant.

Obsolete Alternatives (Not Recommended for New Designs):

The PSMN2R8-40PS,127 (Nexperia USA Inc.) and PSMN8R0-40PS,127 are both listed as obsolete. While they meet the 40V Vdss requirement, their obsolete status makes them unsuitable for new design implementations. The PSMN8R0-40PS,127 exhibits significantly higher Rds On at 7.6 mOhm, which would increase power dissipation in the application.

The AOT240L (Alpha & Omega Semiconductor Inc.) is designated as "Not For New Designs" and therefore should not be selected for new applications despite meeting basic electrical parameters.

Frequently Asked Questions (FAQ)

Q: Can the FDP8441_F085 be directly replaced with the FDP8441 from Fairchild Semiconductor?

A: Yes. The FDP8441 is a direct equivalent with identical electrical specifications and package configuration. The primary difference is product status: FDP8441_F085 is obsolete while FDP8441 is in active production. This makes FDP8441 the recommended substitute for ongoing procurement.

Q: What is the difference between TO-220-3 and TO-220AB packages?

A: Both are through-hole packages with three leads suitable for the same PCB footprints. TO-220-3 is the standard designation, while TO-220AB is a variant designation used by some manufacturers. Mechanical compatibility is maintained across these designations for the devices listed.

Q: Does the IPP023N04NGXKSA1 provide better performance than the FDP8441_F085?

A: The IPP023N04NGXKSA1 exceeds the FDP8441_F085 specifications in several areas: higher continuous drain current (90A versus 80A), lower on-resistance (2.3 mOhm versus 2.7 mOhm), and lower gate charge (120 nC versus 280 nC). These improvements result in reduced power dissipation and faster switching characteristics. The device maintains the same 40V Vdss rating and TO-220-3 package.

Q: Why are some substitute parts listed as obsolete?

A: Obsolete parts are no longer manufactured and have limited inventory availability. While they may meet electrical specifications, they are not suitable for new designs or long-term production commitments. Active production alternatives should be prioritized for new applications.

Q: What does "Not For New Designs" status mean?

A: This designation indicates that while a part may still be available, the manufacturer has discontinued active support and recommends against using it in new design implementations. Parts with this status should be avoided in favor of active production alternatives.

Q: Are all substitute parts ROHS3 compliant?

A: Not all listed substitutes carry ROHS3 compliance certification. The FDP8441_F085 and FDP8441 do not specify ROHS3 status. The IPP023N04NGXKSA1, IRF1404ZPBF, PSMN2R8-40PS,127, and PSMN8R0-40PS,127 are all ROHS3 compliant. Verify compliance requirements for your specific application before selection.

Q: What is the significance of gate charge (Qg) differences between parts?

A: Gate charge affects switching speed and driver circuit requirements. Lower gate charge (such as the 120 nC of IPP023N04NGXKSA1 versus 280 nC of FDP8441_F085) enables faster switching transitions and reduces driver power consumption. Higher gate charge requires more robust gate drive circuitry but may provide improved noise immunity.

Q: Can the IRF1404ZPBF be used as a direct replacement despite higher current rating?

A: The IRF1404ZPBF can be used in applications where the FDP8441_F085 is specified, as it meets or exceeds all mandatory parameters (40V Vdss, ±20V Vgs, -55°C to 175°C operating range). The higher current rating (180A) and different package variant (TO-220AB) do not prevent substitution if the PCB footprint accommodates the package. However, verify that the application does not have specific current or thermal constraints that would be negatively affected by the different Rds On characteristics.

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